Inventor · disambiguated record
Teruyuki Shimura
Also filed as: SHIMURA TERUYUKI
29 granted patents·2 pending applications·482 citations·filing 1988–2012
97Inventor score
Top patents by PatentIndex Score
31 records- 0193US7145397B2Output overvoltage protection circuit for power amplifierMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Dec 5, 2006·69 cites·10 claims
- 0289US6683512B2High frequency module having a laminate board with a plurality of dielectric layersKYOCERA CORP·Filed 2002·Granted Jan 27, 2004·68 cites·21 claims
- 0381US5864169ASemiconductor device including plated heat sink and airbridge for heat dissipationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 26, 1999·65 cites·19 claims
- 0474US5889434AMicrowave power amplifierMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 30, 1999·33 cites·17 claims
- 0566US4977100AMethod of fabricating a MESFETMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 11, 1990·22 cites·20 claims
- 0663US7907009B2High frequency amplifierMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Mar 15, 2011·5 cites·3 claims
- 0761US7605648B2Power amplifierMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Oct 20, 2009·4 cites·8 claims
- 0861US5414273AHeterojunction bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 9, 1995·19 cites·10 claims
- 0957US5760457ABipolar transistor circuit element having base ballasting resistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 2, 1998·18 cites·17 claims
- 1056US5073812AHeterojunction bipolar transistorMITUBISHI DENKI KABUSHIKI KAIS·Filed 1990·Granted Dec 17, 1991·28 cites·13 claims
- 1155US6861906B2High-frequency semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 1, 2005·7 cites·14 claims
- 1251US5231040AMethod of making a field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 27, 1993·14 cites·9 claims
- 1348US5357121AOptoelectronic integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 18, 1994·17 cites·8 claims
- 1447US5793067AHybrid transistor structure with widened leads for reduced thermal resistanceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 11, 1998·14 cites·18 claims
- 1547US4967254ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Oct 30, 1990·9 cites·12 claims
- 1646US5726468ACompound semiconductor bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 10, 1998·10 cites·5 claims
- 1745US6271098B1Heterojunction bipolar transistor and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·2 cites·4 claims
- 1844US5192700AMethod of making field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 9, 1993·11 cites·9 claims
- 1943US5101245AField effect transistor and method for making sameMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 31, 1992·9 cites·17 claims
- 2042US6081003AHeterojunction bipolar transistor with ballast resistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 27, 2000·6 cites·5 claims
- 2141US5719530AHigh power bipolar transistor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 17, 1998·10 cites·16 claims
- 2239US5973543ABias circuit for bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 26, 1999·5 cites·7 claims
- 2338US5237192AMESFET semiconductor device having a T-shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 17, 1993·6 cites·4 claims
- 2438US5163169AFrequency divider having the power supply connected to the gaas substrateMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 10, 1992·6 cites·4 claims
- 2538US5063167AMethod of producing a bipolar transistor with spacersMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Nov 5, 1991·5 cites·6 claims
- 2637US5369044AMethod for producing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 29, 1994·4 cites·2 claims
- 2736US5698871AHeterojunction bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 16, 1997·4 cites·1 claims
- 2836US5270556ASemiconductor device with upper and lower gate electrode structureMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Dec 14, 1993·4 cites·8 claims
- 2936US5212103AMethod of making a heterojunction bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted May 18, 1993·8 cites·15 claims
- 3035US2014232467A1High-frequency amplifier module and high-frequency amplifier module unitMUKAI KENJI·Filed 2012·Application pending·0 cites
- 3133US2003218500A1Power amplifier capable of switching gain while suppressing noise power in reception bandMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →