Inventor · disambiguated record
Huan-Tsung Huang
Also filed as: HUANG HUAN-TSUNG
18 granted patents·4 pending applications·131 citations·filing 2003–2021
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG10TAIWAN SEMICONDUCTOR MFG CO LTD5HUANG HUAN-TSUNG2MASUOKA YURI1PDF SOLUTIONS INC1
Top patents by PatentIndex Score
22 records- 0190US7321139B2Transistor layout for standard cell with optimized mechanical stress effectTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 22, 2008·20 cites·14 claims
- 0289US9136329B2Semiconductor structure with dielectric-sealed doped regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·10 cites·20 claims
- 0386US9812444B2Fin-type resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·5 cites·20 claims
- 0486US6960512B2Method for manufacturing a semiconductor device having an improved disposable spacerTAIWAIN SEMICONDUCTOR MFG COMP·Filed 2003·Granted Nov 1, 2005·50 cites·21 claims
- 0582US8357581B2Transistor performance improving method with metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 22, 2013·5 cites·9 claims
- 0682US8030718B2Local charge and work function engineering on MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 4, 2011·8 cites·14 claims
- 0781US10679723B1Direct memory characterization using periphery transistorsPDF SOLUTIONS INC·Filed 2018·Granted Jun 9, 2020·4 cites·20 claims
- 0877US10998443B2Epi block structure in semiconductor product providing high breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 4, 2021·2 cites·17 claims
- 0976US7768072B2Silicided metal gate for multi-threshold voltage configurationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 3, 2010·6 cites·20 claims
- 1074US8012817B2Transistor performance improving method with metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Sep 6, 2011·4 cites·20 claims
- 1173US8324090B2Method to improve dielectric quality in high-k metal gate technologyMASUOKA YURI·Filed 2008·Granted Dec 4, 2012·6 cites·21 claims
- 1270US8415749B2Semiconductor structure with dielectric-sealed doped regionHUANG HUAN-TSUNG·Filed 2007·Granted Apr 9, 2013·7 cites·20 claims
- 1365US8679926B2Local charge and work function engineering on MOSFETHUANG HUAN-TSUNG·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 1463US8754487B2Semiconductor device with metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 17, 2014·1 cites·12 claims
- 1562US11621351B2Epi block structure in semiconductor product providing high breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 1659US7759210B2Method for forming a MOS device with reduced transient enhanced diffusionTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 20, 2010·1 cites·14 claims
- 1750US9691758B1Fin-type resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·0 cites·20 claims
- 1850US9443925B2Semiconductor structure with dielectric-sealed doped regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·0 cites·20 claims
- 1939US2007114604A1Double-extension formation using offset spacerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 2039US2005260776A1Structure and method for extraction of parasitic junction capacitance in deep submicron technologyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 2138US2005186722A1Method and structure for CMOS device with stress relaxed by ion implantation of carbon or oxygen containing ionsFiled 2004·Application pending·0 cites
- 2234US2005026342A1Semiconductor device having improved short channel effects, and method of forming thereofFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →