Inventor · disambiguated record
Jong-Hyon Ahn
Also filed as: AHN JONG-HYON
33 granted patents·8 pending applications·466 citations·filing 1995–2008
97Inventor score
Top patents by PatentIndex Score
41 records- 0196US7585734B2Method of fabricating multi-gate transistor and multi-gate transistor fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 8, 2009·45 cites·14 claims
- 0291US7361565B2Method of forming a metal gate in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·31 cites·25 claims
- 0386US7045896B2Metal interconnect layer of semiconductor device and method for forming a metal interconnect layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 16, 2006·26 cites·11 claims
- 0484US6765255B2Semiconductor device having metal-insulator-metal capacitor and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 20, 2004·39 cites·18 claims
- 0582US6548862B2Structure of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 15, 2003·24 cites·15 claims
- 0682US6300233B1Method of making a fuse in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 9, 2001·28 cites·13 claims
- 0777US6552438B2Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 22, 2003·34 cites·29 claims
- 0874US7557415B2Trench isolation type semiconductor device and related method of manufactureSAMSUNG ELECTRONCIS CO LTD·Filed 2007·Granted Jul 7, 2009·7 cites·8 claims
- 0974US6465337B1Methods of fabricating integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands thereinSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 15, 2002·18 cites·5 claims
- 1074US6163074AIntegrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 19, 2000·39 cites·49 claims
- 1173US7696051B2Method of fabricating a MOSFET having doped epitaxially grown source/drain region on recessed substrateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 13, 2010·5 cites·6 claims
- 1269US7008835B2Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·13 cites·10 claims
- 1368US6768199B2Flip chip type semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 27, 2004·17 cites·5 claims
- 1468US2009051014A1Method of fabricating semiconductor device having silicide layer and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1567US7486543B2Asymmetrical SRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 3, 2009·10 cites·21 claims
- 1667US6074940AMethod of making a fuse in a semiconductor device and a semiconductor device having a fuseSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 13, 2000·28 cites·14 claims
- 1766US7358588B2Trench isolation type semiconductor device which prevents a recess from being formed in a field regionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·3 cites·6 claims
- 1865US6960785B2MOSFET and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 1, 2005·10 cites·11 claims
- 1962US7544991B2Non-volatile memory device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 9, 2009·2 cites·11 claims
- 2062US7332400B2Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·2 cites·13 claims
- 2161US6175145B1Method of making a fuse in a semiconductor device and a semiconductor device having a fuseSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 16, 2001·23 cites·3 claims
- 2260US6764910B2Structure of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 20, 2004·6 cites·22 claims
- 2358US6482662B1Semiconductor device fabricating methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·6 cites·16 claims
- 2457US7795110B2Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·1 cites·12 claims
- 2555US7288848B2Overlay mark for measuring and correcting alignment errorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 30, 2007·7 cites·34 claims
- 2653US7569480B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·1 cites·22 claims
- 2752US6232189B1Manufacturing method of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 15, 2001·17 cites·13 claims
- 2851US2006160351A1Metal interconnect layer of semiconductor device and method for forming a metal interconnect layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2950US6285540B1Semiconductor device having a fuseSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 4, 2001·3 cites·3 claims
- 3049US7364987B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·0 cites·24 claims
- 3147US6555462B2Semiconductor device having stress reducing laminate and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 29, 2003·2 cites·5 claims
- 3247US2006163669A1Method of fabricating semiconductor device having silicide layer and semiconductor device fabricated therebyYOUN KI-SEOG·Filed 2006·Application pending·0 cites
- 3347US2005285161A1Method of fabricating multi-gate transistor and multi-gate transistor fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3446US7709340B2Semiconductor integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 4, 2010·0 cites·19 claims
- 3545US7579236B2Nonvolatile memory device, method of fabricating and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·0 cites·14 claims
- 3643US5612246AMethod for manufacturing semiconductor substrate having buck transistor and SOI transistor areasSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Mar 18, 1997·11 cites·8 claims
- 3742US6335567B1Semiconductor device having stress reducing laminate and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 1, 2002·8 cites·6 claims
- 3840US2002050649A1Metal interconnect layer of semiconductor device and method for forming a metal interconnect layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
- 3940US2005176193A1Method of forming a gate of a semiconductor deviceFiled 2005·Application pending·0 cites
- 4039US2007293045A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4137US2007257303A1Transistor and method for forming the sameSAMSUNG ELECTRONIC·Filed 2007·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →