Inventor · disambiguated record
Yuan Taur
Also filed as: TAUR YUAN
15 granted patents·1,404 citations·filing 1983–2002
96Inventor score
Files withIBM15
Top patents by PatentIndex Score
15 records- 0198US5767549ASOI CMOS structureIBM·Filed 1996·Granted Jun 16, 1998·417 cites·5 claims
- 0296US4585342ASystem for real-time monitoring the characteristics, variations and alignment errors of lithography structuresIBM·Filed 1984·Granted Apr 29, 1986·95 cites·10 claims
- 0395US6365465B1Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniquesIBM·Filed 1999·Granted Apr 2, 2002·169 cites·15 claims
- 0494US6268640B1Forming steep lateral doping distribution at source/drain junctionsIBM·Filed 1999·Granted Jul 31, 2001·171 cites·29 claims
- 0592US5646058AMethod for fabricating a self-aligned double-gate MOSFET by selective lateral epitaxyIBM·Filed 1996·Granted Jul 8, 1997·93 cites·4 claims
- 0690US5541427ASRAM cell with capacitorIBM·Filed 1993·Granted Jul 30, 1996·87 cites·1 claims
- 0789US5689127AVertical double-gate field effect transistorIBM·Filed 1996·Granted Nov 18, 1997·71 cites·9 claims
- 0888US5780327AVertical double-gate field effect transistorIBM·Filed 1997·Granted Jul 14, 1998·68 cites·10 claims
- 0985US6759710B2Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniquesIBM·Filed 2002·Granted Jul 6, 2004·28 cites·19 claims
- 1084US5604368ASelf-aligned double-gate MOSFET by selective lateral epitaxyIBM·Filed 1995·Granted Feb 18, 1997·52 cites·7 claims
- 1178US5298786ASOI lateral bipolar transistor with edge-strapped base contact and method of fabricating sameIBM·Filed 1993·Granted Mar 29, 1994·43 cites·10 claims
- 1276US6143635AField effect transistors with improved implants and method for making such transistorsIBM·Filed 1999·Granted Nov 7, 2000·37 cites·29 claims
- 1375US6040214AMethod for making field effect transistors having sub-lithographic gates with vertical side wallsIBM·Filed 1998·Granted Mar 21, 2000·47 cites·29 claims
- 1458US4509991ASingle mask process for fabricating CMOS structureIBM·Filed 1983·Granted Apr 9, 1985·21 cites·7 claims
- 1538US6593617B1Field effect transistors with vertical gate side walls and method for making such transistorsIBM·Filed 1998·Granted Jul 15, 2003·5 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →