Inventor · disambiguated record
Ricardo Sousa
Also filed as: SOUSA RICARDO
21 granted patents·2 pending applications·272 citations·filing 2004–2023
93Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE14DIENY BERNARD3CENTRE NAT RECH SCIENT2CROCUS TECHNOLOGY SA2PREJBEANU IOAN LUCIAN1
Top patents by PatentIndex Score
23 records- 0196US8609439B2Magnetic tunnel junction comprising a polarizing layerPREJBEANU IOAN LUCIAN·Filed 2012·Granted Dec 17, 2013·44 cites·8 claims
- 0296US7411817B2Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the sameCENTRE NAT RECH SCIENT·Filed 2006·Granted Aug 12, 2008·51 cites·16 claims
- 0395US8279666B2Spin polarised magnetic deviceDIENY BERNARD·Filed 2010·Granted Oct 2, 2012·130 cites·25 claims
- 0488US10978234B2Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stackCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 0582US10658574B2Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 19, 2020·2 cites·14 claims
- 0680US10818329B2Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junctionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
- 0780US7898833B2Magnetic element with thermally-assisted writingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Mar 1, 2011·12 cites·11 claims
- 0877US7957181B2Magnetic tunnel junction magnetic memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jun 7, 2011·10 cites·34 claims
- 0973US7480175B2Magnetic tunnel junction device and writing/reading for said deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jan 20, 2009·10 cites·24 claims
- 1069US8947916B2Thermally assisted magnetic writing deviceDIENY BERNARD·Filed 2011·Granted Feb 3, 2015·2 cites·17 claims
- 1164US2025231259A1Magnetorestistive sensor sensitive to an out-of-plane magnetic fieldCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1260US8958240B2Magnetic device with thermally-assisted switchingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 17, 2015·2 cites·14 claims
- 1356US9396782B2Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespanCROCUS TECHNOLOGY SA·Filed 2013·Granted Jul 19, 2016·2 cites·3 claims
- 1454US12292486B2Method for measuring an external magnetic field by at least one magnetic memory pointCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted May 6, 2025·0 cites·15 claims
- 1547US12100437B2Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devicesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Sep 24, 2024·0 cites·10 claims
- 1644US11139099B2Magnetic field generatorCENTRE NAT RECH SCIENT·Filed 2017·Granted Oct 5, 2021·0 cites·11 claims
- 1739US10930841B2Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junctionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 23, 2021·0 cites·15 claims
- 1837US11856140B2Predictive communications systemTALKDESK INC·Filed 2022·Granted Dec 26, 2023·0 cites·22 claims
- 1937US8971102B2MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field currentCROCUS TECHNOLOGY SA·Filed 2013·Granted Mar 3, 2015·0 cites·6 claims
- 2036US12046268B2Cryogenic magnetic device more particularly for logic component or memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jul 23, 2024·0 cites·16 claims
- 2134US7626221B2Magnetoresistive random access memory with high current densityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Dec 1, 2009·0 cites·16 claims
- 2228US2006281258A1Magnetic tunnel junction device and writing/reading method for said deviceDIENY BERNARD·Filed 2004·Application pending·0 cites
- 2326US9455012B2Magnetic device with spin polarisationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Sep 27, 2016·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →