Inventor · disambiguated record
Kiyoshi Mitani
Also filed as: MITANI KIYOSHI
61 granted patents·10 pending applications·2,258 citations·filing 1980–2012
99Inventor score
Files withSHINETSU HANDOTAI KK53MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6ITO ATSUO2MITANI KIYOSHI2OHTSUKI TSUYOSHI2
Top patents by PatentIndex Score
71 records- 0199US6372609B1Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Apr 16, 2002·512 cites·16 claims
- 0296USD414867SDental cameraMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Oct 5, 1999·64 cites·1 claims
- 0396USD396869STelevision cameraMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Aug 11, 1998·60 cites·1 claims
- 0495US6596610B1Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 22, 2003·108 cites·1 claims
- 0591US7315064B2Bonded wafer and method of producing bonded waferSHINETSU HANDOTAI KK·Filed 2005·Granted Jan 1, 2008·20 cites·5 claims
- 0691US6140210AMethod of fabricating an SOI wafer and SOI wafer fabricated therebySHINETSU HANDOTAI KK·Filed 1998·Granted Oct 31, 2000·111 cites·8 claims
- 0789US7052974B2Bonded wafer and method of producing bonded waferSHINETSU HANDOTAI KK·Filed 2002·Granted May 30, 2006·47 cites·16 claims
- 0888US6846718B1Method for producing SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jan 25, 2005·42 cites·3 claims
- 0988US6284629B1Method of fabricating an SOI wafer and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 4, 2001·78 cites·11 claims
- 1088US6245645B1Method of fabricating an SOI waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 12, 2001·80 cites·16 claims
- 1187US7084046B2Method of fabricating SOI waferSHINETSU HANDOTAI KK·Filed 2002·Granted Aug 1, 2006·46 cites·26 claims
- 1286US6566233B2Method for manufacturing bonded waferSHINETSU HANDOTAI KK·Filed 2000·Granted May 20, 2003·44 cites·8 claims
- 1386US6306730B2Method of fabricating an SOI wafer and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 23, 2001·29 cites·1 claims
- 1486US6284628B1Method of recycling a delaminated wafer and a silicon wafer used for the recyclingSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 4, 2001·100 cites·14 claims
- 1586USD390244STelevision cameraMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Feb 3, 1998·29 cites·1 claims
- 1685US7550309B2Method for producing semiconductor waferSHINETSU HANDOTAI KK·Filed 2005·Granted Jun 23, 2009·10 cites·8 claims
- 1785US6461939B1SOI wafers and methods for producing SOI waferSHINETSU HANDOTAI KK·Filed 2000·Granted Oct 8, 2002·42 cites·17 claims
- 1885US6312797B1Method for manufacturing bonded wafer and bonded waferSHINETSU HANDOTAI KK·Filed 1999·Granted Nov 6, 2001·74 cites·9 claims
- 1984US6004866AMethod for manufacturing bonded wafer and bonded wafer manufactured therebySHINETSU HANDOTAI KK·Filed 1997·Granted Dec 21, 1999·73 cites·20 claims
- 2082US6884696B2Method for producing bonding waferSHINETSU HANDOTAI KK·Filed 2002·Granted Apr 26, 2005·36 cites·17 claims
- 2182USD398008SSpeaker boxMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Sep 8, 1998·24 cites·1 claims
- 2281US5478408ASOI substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 1995·Granted Dec 26, 1995·63 cites·4 claims
- 2380US6720640B2Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 13, 2004·25 cites·12 claims
- 2479US6902988B2Method for treating substrates for microelectronics and substrates obtained by said methodSOITEC SILICON ON INSULATOR·Filed 2002·Granted Jun 7, 2005·20 cites·25 claims
- 2579US6362076B1Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatmentSHINETSU HANDOTAI KK·Filed 1999·Granted Mar 26, 2002·54 cites·5 claims
- 2677US6784494B2Production method for SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2001·Granted Aug 31, 2004·16 cites·1 claims
- 2776US7601613B2Manufacturing method of bonded waferSHINETSU HANDOTAI KK·Filed 2005·Granted Oct 13, 2009·7 cites·19 claims
- 2876US6716722B1Method of producing a bonded wafer and the bonded waferSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 6, 2004·19 cites·21 claims
- 2976US5650353AMethod for production of SOI substrateSHINETSU HANDOTAI KK·Filed 1995·Granted Jul 22, 1997·53 cites·2 claims
- 3076US5514235AMethod of making bonded wafersSHINETSU HANDOTAI KK·Filed 1994·Granted May 7, 1996·56 cites·5 claims
- 3175US6959854B2Production method for bonded substratesSHINETSU HANDOTAI KK·Filed 2002·Granted Nov 1, 2005·17 cites·18 claims
- 3274US6900113B2Method for producing bonded wafer and bonded waferSHINETSU HANDOTAI KK·Filed 2001·Granted May 31, 2005·21 cites·11 claims
- 3372US7235427B2Method for treating substrates for microelectronics and substrates obtained by said methodSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 26, 2007·3 cites·15 claims
- 3471US8575722B2Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layerMITANI KIYOSHI·Filed 2009·Granted Nov 5, 2013·4 cites·5 claims
- 3568US6998329B2SOI wafer producing method, and wafer separating jigSHINETSU HANDOTAI KK·Filed 2002·Granted Feb 14, 2006·15 cites·10 claims
- 3667US7320929B2Method of fabricating SOI waferSHINETSU HANDOTAI KK·Filed 2003·Granted Jan 22, 2008·14 cites·11 claims
- 3767US6797632B1Bonded wafer producing method and bonded waferSHINETSU HANDOTAI KK·Filed 2000·Granted Sep 28, 2004·15 cites·6 claims
- 3865US8236667B2Silicon on insulator (SOI) wafer and process for producing sameITO ATSUO·Filed 2008·Granted Aug 7, 2012·3 cites·6 claims
- 3965US6239004B1Method of forming oxide film on an SOI layer and method of fabricating a bonded waferSHINETSU HANDOTAI KK·Filed 1998·Granted May 29, 2001·30 cites·10 claims
- 4064US7531425B2Method of fabricating bonded waferSHINETSU HANDOTAI KK·Filed 2002·Granted May 12, 2009·10 cites·2 claims
- 4159US7176102B2Method for producing SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2004·Granted Feb 13, 2007·8 cites·3 claims
- 4258US7091107B2Method for producing SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2004·Granted Aug 15, 2006·8 cites·8 claims
- 4357US8877609B2Method for manufacturing bonded substrate having an insulator layer in part of bonded substrateOHTSUKI TSUYOSHI·Filed 2012·Granted Nov 4, 2014·1 cites·16 claims
- 4457US8703580B2Silicon on insulator (SOI) wafer and process for producing sameITO ATSUO·Filed 2008·Granted Apr 22, 2014·1 cites·13 claims
- 4557US5918139AMethod of manufacturing a bonding substrateSHINETSU HANDOTAI KK·Filed 1998·Granted Jun 29, 1999·23 cites·7 claims
- 4657USD409618SAudio mixerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted May 11, 1999·9 cites·1 claims
- 4755US6238990B1Method for heat treatment of SOI wafer and SOI wafer heat-treated by the methodSHINETSU HANDOTAI KK·Filed 1998·Granted May 29, 2001·19 cites·4 claims
- 4854US5804494AMethod of fabricating bonded waferSHINETSU HANDOTAI KK·Filed 1996·Granted Sep 8, 1998·20 cites·20 claims
- 4954USD278629STelevision receiverMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1982·Granted Apr 30, 1985·5 cites·1 claims
- 5053US7560313B2SOI wafer and method for producing the sameSHINETSU HANDOTAI KK·Filed 2002·Granted Jul 14, 2009·4 cites·1 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →