Inventor · disambiguated record
Venugopalan Vaithyanathan
Also filed as: VAITHYANATHAN VENUGOPALAN
21 granted patents·2 pending applications·62 citations·filing 2008–2013
93Inventor score
Top patents by PatentIndex Score
23 records- 0183US8022547B2Non-volatile memory cells including small volume electrical contact regionsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Sep 20, 2011·10 cites·10 claims
- 0279US8198181B1Schottky diode switch and memory units containing the sameKIM YOUNG PIL·Filed 2012·Granted Jun 12, 2012·4 cites·20 claims
- 0379US7936585B2Non-volatile memory cell with non-ohmic selection layerSEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 3, 2011·9 cites·20 claims
- 0477US8203865B2Non-volatile memory cell with non-ohmic selection layerTIAN WEI·Filed 2011·Granted Jun 19, 2012·5 cites·20 claims
- 0574US8203875B2Anti-parallel diode structure and method of fabricationAMIN NURUL·Filed 2011·Granted Jun 19, 2012·5 cites·20 claims
- 0674US8158964B2Schottky diode switch and memory units containing the sameKIM YOUNG PIL·Filed 2009·Granted Apr 17, 2012·4 cites·13 claims
- 0772US7911833B2Anti-parallel diode structure and method of fabricationSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Mar 22, 2011·6 cites·21 claims
- 0871US8288749B2Schottky diode switch and memory units containing the sameKIM YOUNG PIL·Filed 2012·Granted Oct 16, 2012·2 cites·19 claims
- 0961US8446752B2Programmable metallization cell switch and memory units containing the sameSUN MING·Filed 2009·Granted May 21, 2013·4 cites·19 claims
- 1061US8178864B2Asymmetric barrier diodeJIN INSIK·Filed 2008·Granted May 15, 2012·2 cites·19 claims
- 1160US8686388B2Non-volatile resistive sense memory with improved switchingROELOFS ANDREAS·Filed 2012·Granted Apr 1, 2014·2 cites·20 claims
- 1259US8134138B2Programmable metallization memory cell with planarized silver electrodeWEI TIAN·Filed 2009·Granted Mar 13, 2012·4 cites·8 claims
- 1358US8648426B2Tunneling transistorsJIN INSIK·Filed 2010·Granted Feb 11, 2014·1 cites·17 claims
- 1457US8772122B2Programmable metallization memory cell with layered solid electrolyte structureSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Jul 8, 2014·0 cites·17 claims
- 1557US8487291B2Programmable metallization memory cell with layered solid electrolyte structureAMIN NURUL·Filed 2009·Granted Jul 16, 2013·1 cites·15 claims
- 1656US8288254B2Programmable metallization memory cell with planarized silver electrodeTIAN WEI·Filed 2012·Granted Oct 16, 2012·1 cites·18 claims
- 1754US8367464B2Nano-dimensional non-volatile memory cellsSEAGATE TECHNOLOGY LLC·Filed 2011·Granted Feb 5, 2013·0 cites·15 claims
- 1847US8248836B2Non-volatile memory cell stack with dual resistive elementsJIN INSIK·Filed 2009·Granted Aug 21, 2012·1 cites·19 claims
- 1945US8227783B2Non-volatile resistive sense memory with praseodymium calcium manganese oxideROELOFS ANDREAS·Filed 2009·Granted Jul 24, 2012·1 cites·16 claims
- 2044US8309945B2Programmable metallization memory cell with planarized silver electrodeTIAN WEI·Filed 2012·Granted Nov 13, 2012·0 cites·20 claims
- 2138US2010102369A1Ferroelectric memory with magnetoelectric elementSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 2238US2011002161A1Phase change memory cell with selecting elementSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 2333US8421048B2Non-volatile memory with active ionic interface regionVAITHYANATHAN VENUGOPALAN·Filed 2009·Granted Apr 16, 2013·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Venugopalan Vaithyanathan files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →