Inventor · disambiguated record
Chan Syun David Yang
Also filed as: YANG CHAN SYUN DAVID · YANG CHAN-SYUN
19 granted patents·3 pending applications·154 citations·filing 1997–2023
93Inventor score
Top patents by PatentIndex Score
22 records- 0194US9425310B2Methods for forming wrap around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·13 cites·21 claims
- 0294US7807579B2Hydrogen ashing enhanced with water vapor and diluent gasAPPLIED MATERIALS INC·Filed 2007·Granted Oct 5, 2010·32 cites·20 claims
- 0389US6759340B2Method of etching a trench in a silicon-on-insulator (SOI) structureFiled 2002·Granted Jul 6, 2004·45 cites·29 claims
- 0484US9472414B2Self-aligned multiple spacer patterning processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·4 cites·20 claims
- 0583US10283603B2Methods for forming wrap around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·2 cites·20 claims
- 0682US8901665B2Gate structure for semiconductor deviceKELLY ANDREW JOSEPH·Filed 2011·Granted Dec 2, 2014·7 cites·16 claims
- 0779US6551941B2Method of forming a notched silicon-containing gate structureAPPLIED MATERIALS INC·Filed 2001·Granted Apr 22, 2003·27 cites·88 claims
- 0873US9935172B2Methods for forming wrap around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·1 cites·20 claims
- 0972US12014954B2Method and equipment for forming gaps in a material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 1070US11551966B2Method of forming semiconductor structure having layer with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·0 cites·20 claims
- 1169US10861745B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·1 cites·20 claims
- 1265US10790370B2Wrap around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·0 cites·20 claims
- 1363US11942367B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·20 claims
- 1463US10755968B2Method of forming semiconductor structure having layer with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 1558US10157773B1Semiconductor structure having layer with re-entrant profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 1658US6767821B1Method for fabricating an interconnect lineFiled 2003·Granted Jul 27, 2004·8 cites·29 claims
- 1755US11244856B2Method and equipment for forming gaps in a material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 8, 2022·0 cites·20 claims
- 1855US2023386921A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1949US11205700B2Air gap spacer and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·0 cites·20 claims
- 2047US6209551B1Methods and compositions for post-etch layer stack treatment in semiconductor fabricationLAM RES CORP·Filed 1997·Granted Apr 3, 2001·14 cites·18 claims
- 2137US2004077178A1Method for laterally etching a semiconductor structureAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 2237US2004018647A1Method for controlling the extent of notch or undercut in an etched profile using optical reflectometryAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
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