Inventor · disambiguated record
Chan-Sui Pang
Also filed as: PANG CHAN S · PANG CHAN-SUI · Pang chan
13 granted patents·1 pending application·552 citations·filing 1988–2008
94Inventor score
Files withSANDISK CORP3BRIGHT MICROELECTRONICS INC2CATALYST SEMICONDUCTOR INC2WINBOND ELECTRONICS CORP2CATALYST SEMICONDUCTOR CORP1
Top patents by PatentIndex Score
14 records- 0196US7606074B2Word line compensation in non-volatile memory erase operationsSANDISK CORP·Filed 2008·Granted Oct 20, 2009·44 cites·20 claims
- 0292US7450433B2Word line compensation in non-volatile memory erase operationsSANDISK CORP·Filed 2004·Granted Nov 11, 2008·63 cites·39 claims
- 0389US7057931B2Flash memory programming using gate induced junction leakage currentSANDISK CORP·Filed 2003·Granted Jun 6, 2006·47 cites·60 claims
- 0488US5185718AMemory array architecture for flash memoryCATALYST SEMICONDUCTOR CORP·Filed 1991·Granted Feb 9, 1993·75 cites·8 claims
- 0587US6493262B1Method for operating nonvolatile memory cellsWINBOND ELECTRONICS CORP·Filed 2000·Granted Dec 10, 2002·51 cites·5 claims
- 0686US5663907ASwitch driver circuit for providing small sector sizes for negative gate erase flash EEPROMS using a standard twin-well CMOS processBRIGHT MICROELECTRONICS INC·Filed 1996·Granted Sep 2, 1997·77 cites·9 claims
- 0784US5033023AHigh density EEPROM cell and process for making the cellCATALYST SEMICONDUCTOR INC·Filed 1988·Granted Jul 16, 1991·51 cites·15 claims
- 0880US6798012B1Dual-bit double-polysilicon source-side injection flash EEPROM cellFiled 1999·Granted Sep 28, 2004·41 cites·28 claims
- 0973US6714454B2Method of operation of a dual-bit double-polysilicon source-side injection flash EEPROM cellFiled 2002·Granted Mar 30, 2004·16 cites·16 claims
- 1072US4894802ANonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell eraseCATALYST SEMICONDUCTOR INC·Filed 1988·Granted Jan 16, 1990·28 cites·3 claims
- 1170US5986941AProgramming current limiter for source-side injection EEPROM cellsBRIGHT MICROELECTRONICS INC·Filed 1997·Granted Nov 16, 1999·32 cites·3 claims
- 1258US4807003AHigh-reliablity single-poly eeprom cellNAT SEMICONDUCTOR CORP·Filed 1988·Granted Feb 21, 1989·20 cites·9 claims
- 1348USD336316SToy motorcycleWANG SHING PLASTIC FACTORY LTD·Filed 1991·Granted Jun 8, 1993·7 cites·1 claims
- 1430US2003071301A1Method for erasing a nonvolatile memory cell formed in a body region of a substrateWINBOND ELECTRONICS CORP·Filed 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →