Inventor · disambiguated record
Yoshiyuki Yonezawa
Also filed as: YONEZAWA YOSHIYUKI
18 granted patents·5 pending applications·80 citations·filing 1995–2021
91Inventor score
Files withFUJI ELECTRIC CO LTD7FUJI ELEC DEVICE TECH CO LTD2FUJI ELECTRIC HOLDINGS2NAKAMURA SHUN-ICHI2NAT INST FOR MATERIALS SCIENCE2
Top patents by PatentIndex Score
23 records- 0189US8178920B2Semiconductor device and method of forming the sameNAKAMURA SHUN-ICHI·Filed 2009·Granted May 15, 2012·19 cites·19 claims
- 0284US7821014B2Semiconductor device and manufacturing method thereof with a recessed backside substrate for breakdown voltage blockingFUJI ELECTRIC SYSTEMS CO LTD·Filed 2007·Granted Oct 26, 2010·11 cites·18 claims
- 0383US7615849B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC HOLDINGS·Filed 2006·Granted Nov 10, 2009·9 cites·20 claims
- 0469US10354867B2Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·18 claims
- 0569US6888156B2Thin film deviceFUJI ELECTRIC RES·Filed 2002·Granted May 3, 2005·12 cites·4 claims
- 0666US9418840B2Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Aug 16, 2016·1 cites·17 claims
- 0765US8802546B2Method for manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Aug 12, 2014·1 cites·7 claims
- 0864US10026610B2Silicon carbide semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2015·Granted Jul 17, 2018·1 cites·16 claims
- 0958US9041006B2Silicon carbide MOS semiconductor deviceNAKAMURA SHUN-ICHI·Filed 2009·Granted May 26, 2015·1 cites·9 claims
- 1056US7259409B2Thin film device and its fabrication methodNAT INST FOR MATERIALS SCIENCE·Filed 2003·Granted Aug 21, 2007·6 cites·3 claims
- 1148US9856582B2SiC single crystal and production method thereofRYO MINA·Filed 2012·Granted Jan 2, 2018·0 cites·18 claims
- 1247US12249625B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 1346US2007187695A1Semiconductor device and method of forming the sameC O FUJI ELECTRIC HOLDINGS CO·Filed 2007·Application pending·0 cites
- 1446US2008318359A1Method of manufacturing silicon carbide semiconductor substrateFUJI ELEC DEVICE TECH CO LTD·Filed 2008·Application pending·0 cites
- 1545US5587793ABirefringence distribution measuring methodNAKAI SADAO·Filed 1995·Granted Dec 24, 1996·18 cites·3 claims
- 1644US2007243722A1Silicon carbide semiconductor device and manufacturing method thereofFUJI ELECTRIC HOLDINGS·Filed 2007·Application pending·0 cites
- 1743US11282919B2Semiconductor deviceAIST·Filed 2019·Granted Mar 22, 2022·0 cites·12 claims
- 1843US10868122B2Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·4 claims
- 1940US2010314247A1Filtered cathodic arc device and carbon protective film deposited using the deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2010·Application pending·0 cites
- 2039US8324631B2Silicon carbide semiconductor device and method for manufacturing the sameYONEZAWA YOSHIYUKI·Filed 2007·Granted Dec 4, 2012·0 cites·8 claims
- 2138US2005179034A1Thin film device and its fabrication methodFUJI ELECTRIC CORPORATE RES AN·Filed 2005·Application pending·0 cites
- 2236US6855972B2Composite integrated circuit and its fabrication methodNAT INST FOR MATERIALS SCIENCE·Filed 2002·Granted Feb 15, 2005·0 cites·6 claims
- 2333US9257544B2Semiconductor device and fabrication method of semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Feb 9, 2016·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →