Inventor · disambiguated record
Hayato Koike
Also filed as: KOIKE HAYATO
18 granted patents·1 pending application·34 citations·filing 2010–2020
90Inventor score
Top patents by PatentIndex Score
19 records- 0184US8861136B2Spin conduction element and magnetic sensor and magnetic head using spin conductionTDK CORP·Filed 2013·Granted Oct 14, 2014·7 cites·13 claims
- 0283US8432645B2Magneto-resistive effect element, magnetic head, magnetic head slider, head gimbal assembly and hard disk drive apparatusMATSUZAWA HIRONOBU·Filed 2011·Granted Apr 30, 2013·8 cites·20 claims
- 0382US10347823B2Magnetoresistive element and magnetic sensorTDK CORP·Filed 2017·Granted Jul 9, 2019·2 cites·8 claims
- 0472US10141501B2Magnetoresistive elementTDK CORP·Filed 2017·Granted Nov 27, 2018·2 cites·7 claims
- 0572US9728713B2Magnetoresistive element, spin MOSFET, magnetic sensor, and magnetic headTDK CORP·Filed 2014·Granted Aug 8, 2017·2 cites·13 claims
- 0672US8564911B2Magneto-resistive effect element having spacer layer including gallium oxide layer with metal elementKOIKE HAYATO·Filed 2011·Granted Oct 22, 2013·3 cites·8 claims
- 0770US8441763B2Magneto-resistive effect element having spacer layer with thin central portionCHOU TSUTOMU·Filed 2011·Granted May 14, 2013·2 cites·12 claims
- 0869US10833252B2Magnetoresistance effect element, magnetic sensor and spin transistorTDK CORP·Filed 2019·Granted Nov 10, 2020·1 cites·26 claims
- 0968US8456962B2Magnetic head for microwave assisted magnetic recordingYAMANE TAKEKAZU·Filed 2011·Granted Jun 4, 2013·2 cites·14 claims
- 1067US8498083B2Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copperKOIKE HAYATO·Filed 2011·Granted Jul 30, 2013·2 cites·9 claims
- 1166US8405935B2Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layerCHOU TSUTOMU·Filed 2010·Granted Mar 26, 2013·2 cites·10 claims
- 1264US10950783B2Magnetoresistive element and magnetic sensorTDK CORP·Filed 2019·Granted Mar 16, 2021·0 cites·8 claims
- 1363US8593766B2Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layerTSUCHIYA YOSHIHIRO·Filed 2011·Granted Nov 26, 2013·1 cites·8 claims
- 1458US11024727B2Magnetoresistance effect element, magnetic sensor and spin transistorTDK CORP·Filed 2020·Granted Jun 1, 2021·0 cites·24 claims
- 1555US10707335B2Magnetoresistance effect element, magnetic sensor and spin transistorTDK CORP·Filed 2019·Granted Jul 7, 2020·0 cites·26 claims
- 1653US10985311B2Semiconductor element, magnetoresistance effect element, magnetic sensor and spin transistorTDK CORP·Filed 2019·Granted Apr 20, 2021·0 cites·14 claims
- 1747US9323674B2Processor, information processing apparatus, and control method of processorFUJITSU LTD·Filed 2014·Granted Apr 26, 2016·0 cites·10 claims
- 1840US10176035B2System, information processing device, and non-transitory medium for storing program for migration of virtual machineFUJITSU LTD·Filed 2016·Granted Jan 8, 2019·0 cites·15 claims
- 1940US2015001601A1Spin injection electrode structure and spin transport element having the sameTDK CORP·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →