Inventor · disambiguated record
Yoshifumi Tomomatsu
Also filed as: TOMOMATSU YOSHIFUMI
25 granted patents·6 pending applications·360 citations·filing 1993–2020
96Inventor score
Top patents by PatentIndex Score
31 records- 0192US8178947B2Semiconductor deviceTAKAHASHI TETSUO·Filed 2008·Granted May 15, 2012·29 cites·29 claims
- 0289US7211837B2Insulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted May 1, 2007·20 cites·8 claims
- 0384US7986003B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 26, 2011·16 cites·9 claims
- 0481US6734497B2Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 11, 2004·34 cites·18 claims
- 0581US6633473B1Overcurrent control circuit of power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 14, 2003·39 cites·20 claims
- 0680US7705398B2Semiconductor device preventing recovery breakdown and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Apr 27, 2010·9 cites·8 claims
- 0780US6781200B2Insulated gate semiconductor device for realizing low gate capacity and a low short-circuit currentMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 24, 2004·31 cites·8 claims
- 0879US6541826B2Field effect semiconductor device and its production methodMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 1, 2003·26 cites·11 claims
- 0974US6472693B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 29, 2002·21 cites·28 claims
- 1072US7768101B2Semiconductor device having an insulated gate bipolar transistor and a free wheel diodeMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 3, 2010·5 cites·6 claims
- 1166US6486523B2Power semiconductor device with temperature detectorMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 26, 2002·12 cites·7 claims
- 1266US5729032AField effect type semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 17, 1998·37 cites·10 claims
- 1361US8294244B2Semiconductor device having an enlarged emitter electrodeSUZUKI KENJI·Filed 2010·Granted Oct 23, 2012·1 cites·9 claims
- 1456US5321281AInsulated gate semiconductor device and method of fabricating sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 14, 1994·15 cites·10 claims
- 1555US5451531AMethod of fabricating an insulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 19, 1995·14 cites·31 claims
- 1654US6229196B1Semiconductor device and fabrication method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 8, 2001·20 cites·14 claims
- 1751US5355003ASemiconductor device having stable breakdown voltage in wiring areaMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Oct 11, 1994·14 cites·7 claims
- 1849US6680513B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jan 20, 2004·4 cites·6 claims
- 1945US2007069252A1Insulated gate semiconductor device having a clamping element to clamp gate-emitter voltage and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 2044US5945691ASemiconductor device for preventing destruction during a turn-off stateMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 31, 1999·11 cites·2 claims
- 2143US9972618B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 15, 2018·0 cites·9 claims
- 2240US6683348B1Insulated gate bipolar semiconductor device transistor with a ladder shaped emitterMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 27, 2004·1 cites·16 claims
- 2339US6709914B2Manufacturing process of pn junction diode device and pn junction diode deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 23, 2004·1 cites·19 claims
- 2439US2005122748A1Semiconductor device and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 2539US2022376073A1Schottky barrier diodeMITSUBISHI ELECTRIC CORP·Filed 2020·Application pending·0 cites
- 2639US2005194660A1IGBT moduleMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 2736US2002149055A1Semiconductor device including insulating substrate formed of single-crystal silicon chipMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 2835US8791568B2Semiconductor deviceNAKANO SEIYA·Filed 2012·Granted Jul 29, 2014·0 cites·7 claims
- 2932US2002109183A1Field-effect semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 3030US5489788AInsulated gate semiconductor device with improved short-circuit toleranceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 6, 1996·0 cites·15 claims
- 3125US10347725B2Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stressMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 9, 2019·0 cites·17 claims
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