Inventor · disambiguated record
Seong-Jun Heo
Also filed as: HEO SEONG-JUN
11 granted patents·2 pending applications·67 citations·filing 2001–2020
89Inventor score
Top patents by PatentIndex Score
13 records- 0184US11453262B2Void bush for vehicle suspensionHYUNDAI MOTOR CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·14 claims
- 0276US7465617B2Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 16, 2008·4 cites·19 claims
- 0375US7544996B2Methods of fabricating a semiconductor device having a metal gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·4 cites·4 claims
- 0475US7109104B2Methods of fabricating a semiconductor device having a metal gate patternSAMSUNG ELECTRONICS LTD CO·Filed 2003·Granted Sep 19, 2006·15 cites·22 claims
- 0572US6764961B2Method of forming a metal gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 20, 2004·18 cites·7 claims
- 0666US7306996B2Methods of fabricating a semiconductor device having a metal gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 11, 2007·2 cites·21 claims
- 0762US6797559B2Method of fabricating semiconductor device having metal conducting layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·10 cites·20 claims
- 0859US6960515B2Method of forming a metal gateSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 1, 2005·10 cites·14 claims
- 0955US7772643B2Methods of fabricating semiconductor device having a metal gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 10, 2010·0 cites·20 claims
- 1051US7005367B2Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 28, 2006·2 cites·69 claims
- 1143US2006163677A1Methods of forming a semiconductor device having a metal gate electrode and associated devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1238US7098123B2Methods of forming a semiconductor device having a metal gate electrode and associated devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·0 cites·24 claims
- 1334US2004238876A1Semiconductor structure having low resistance and method of manufacturing sameFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →