Inventor · disambiguated record
Charles A. Dark
Also filed as: DARK CHARLES · DARK CHARLES A
13 granted patents·68 citations·filing 1996–2009
90Inventor score
Files withNAT SEMICONDUCTOR CORP13
Top patents by PatentIndex Score
13 records- 0175US6815797B1Silicide bridged anti-fuseNAT SEMICONDUCTOR CORP·Filed 2002·Granted Nov 9, 2004·21 cites·30 claims
- 0272US7470594B1System and method for controlling the formation of an interfacial oxide layer in a polysilicon emitter transistorNAT SEMICONDUCTOR CORP·Filed 2005·Granted Dec 30, 2008·4 cites·20 claims
- 0363US7507607B1Method of forming a silicide bridged anti-fuse with a tungsten plug metalization processNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 24, 2009·10 cites·20 claims
- 0463US7488647B1System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor deviceNAT SEMICONDUCTOR CORP·Filed 2005·Granted Feb 10, 2009·2 cites·20 claims
- 0558US6440781B1Method of adding bias-independent aluminum bridged anti-fuses to a tungsten plug processNAT SEMICONDUCTOR CORP·Filed 2001·Granted Aug 27, 2002·9 cites·10 claims
- 0656US7118998B1Method of forming a conductive structureNAT SEMICONDUCTOR CORP·Filed 2004·Granted Oct 10, 2006·6 cites·15 claims
- 0756US6563189B1Method of adding Zener zap aluminum bridged anti-fuses to a tungsten plug processNAT SEMICONDUCTOR CORP·Filed 2001·Granted May 13, 2003·8 cites·10 claims
- 0855US6815714B1Conductive structure in a semiconductor materialNAT SEMICONDUCTOR CORP·Filed 2003·Granted Nov 9, 2004·4 cites·26 claims
- 0954US7989883B1System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor deviceNAT SEMICONDUCTOR CORP·Filed 2009·Granted Aug 2, 2011·0 cites·20 claims
- 1052US6930010B1Method of forming a conductive structure in a semiconductor materialNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 16, 2005·3 cites·18 claims
- 1140US7776708B1System and method for providing a nitride cap over a polysilicon filled trench to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor deviceNAT SEMICONDUCTOR CORP·Filed 2005·Granted Aug 17, 2010·0 cites·20 claims
- 1239US6812486B1Conductive structure and method of forming the structureNAT SEMICONDUCTOR CORP·Filed 2003·Granted Nov 2, 2004·0 cites·20 claims
- 1329US6179975B1Method of monitoring target/component consumption for dual use titanium/titanium nitride sputteringNAT SEMICONDUCTOR CORP·Filed 1996·Granted Jan 30, 2001·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →