Inventor · disambiguated record
Carlos Mazure-Espejo
Also filed as: MAZURE-ESPEJO CARLOS · MAZURE-ESPEJO CARLOS-ALB
22 granted patents·2 pending applications·317 citations·filing 1988–2001
96Inventor score
Top patents by PatentIndex Score
24 records- 0187US6043529ASemiconductor configuration with a protected barrier for a stacked cellSIEMENS AG·Filed 1999·Granted Mar 28, 2000·72 cites·7 claims
- 0283US6468896B2Method of fabricating semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 22, 2002·29 cites·11 claims
- 0368US6091625AFerroelectric memory and method for preventing aging in a memory cellSIEMENS AG·Filed 1999·Granted Jul 18, 2000·29 cites·8 claims
- 0464US6844581B2Storage capacitor and associated contact-making structure and a method for fabricating the storage capacitor and the contact-making structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 18, 2005·12 cites·4 claims
- 0562US4906585AMethod for manufacturing wells for CMOS transistor circuits separated by insulating trenchesSIEMENS AG·Filed 1988·Granted Mar 6, 1990·28 cites·9 claims
- 0658US6100187AMethod of producing a barrier layer in a semiconductor bodySIEMENS AG·Filed 1998·Granted Aug 8, 2000·22 cites·11 claims
- 0755US6037256AMethod for producing a noble metal-containing structure on a substrate, and semiconductor component having such a noble metal-containing structureSIEMENS AG·Filed 1998·Granted Mar 14, 2000·15 cites·11 claims
- 0853US6156673AProcess for producing a ceramic layerINFINEON TECHNOLOGIES AG·Filed 1998·Granted Dec 5, 2000·17 cites·8 claims
- 0953US6004856AManufacturing process for a raised capacitor electrodeSIEMENS AG·Filed 1998·Granted Dec 21, 1999·14 cites·11 claims
- 1049US6337239B1Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrierSIEMENS AG·Filed 1999·Granted Jan 8, 2002·14 cites·11 claims
- 1149US6197633B1Method for the production of an integrated semiconductor memory configurationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 6, 2001·10 cites·3 claims
- 1248US6414300B1Circuit with a sensor and non-volatile memory having a ferroelectric dielectric capacitorINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 2, 2002·11 cites·14 claims
- 1346US6605505B2Process for producing an integrated semiconductor memory configurationSIEMENS AG·Filed 2001·Granted Aug 12, 2003·2 cites·8 claims
- 1446US6136659AProduction process for a capacitor electrode formed of a platinum metalINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 24, 2000·12 cites·17 claims
- 1545US6958501B2Contact-making structure for a ferroelectric storage capacitor and method for fabricating the structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 25, 2005·1 cites·13 claims
- 1641US6168988B1Method for producing barrier-free semiconductor memory configurationsINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jan 2, 2001·7 cites·11 claims
- 1738US6316802B1Easy to manufacture integrated semiconductor memory configuration with platinum electrodesINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 13, 2001·5 cites·9 claims
- 1837US6627934B1Integrated semiconductor memory configuration with a buried plate electrode and method for its fabricationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 30, 2003·4 cites·7 claims
- 1937US6537900B2Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·0 cites·17 claims
- 2037US6097050AMemory configuration with self-aligning non-integrated capacitor configurationSIEMENS AG·Filed 1999·Granted Aug 1, 2000·6 cites·24 claims
- 2136US2001054599A1Etching methodFiled 2001·Application pending·0 cites
- 2235US6297526B1Process for producing barrier-free semiconductor memory configurationsSIEMENS AG·Filed 1999·Granted Oct 2, 2001·3 cites·6 claims
- 2335US6126998AProcess for producing a ceramic layer containing BiSIEMENS AG·Filed 1998·Granted Oct 3, 2000·4 cites·11 claims
- 2435US2002017676A1Microelectronic structureFiled 2001·Application pending·0 cites
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