Inventor · disambiguated record
Paolo Ghezzi
Also filed as: GHEZZI PAOLO
13 granted patents·198 citations·filing 1990–2003
92Inventor score
Top patents by PatentIndex Score
13 records- 0184US5194157ABlood purifying equipment particularly for the treatment of patients suffering from renal insufficiency, and a method of producing a reinfusion liquid for haemodiafiltration (HDF)SORIN BIOMEDICA EMODIALISI SRL·Filed 1992·Granted Mar 16, 1993·93 cites·27 claims
- 0273US6876033B2Electrically erasable and programmable non-volatile memory cellST MICROELECTRONICS SRL·Filed 2003·Granted Apr 5, 2005·19 cites·19 claims
- 0354US6188121B1High voltage capacitorSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Feb 13, 2001·15 cites·3 claims
- 0450US6670229B2Bipolar transistor produced using processes compatible with those employed in the manufacture of MOS deviceST MICROELECTRONICS SRL·Filed 2002·Granted Dec 30, 2003·5 cites·25 claims
- 0550US5322803AProcess for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cellsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Jun 21, 1994·13 cites·4 claims
- 0648US5132239AProcess for manufacturing eeprom memory cells having a single level of polysilicon and thin oxide by using differential oxidationSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Jul 21, 1992·15 cites·3 claims
- 0747US5527728AMethod of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cellsSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Jun 18, 1996·9 cites·6 claims
- 0847US5486486AProcess for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devicesST MICROELECTRONICS SRL·Filed 1994·Granted Jan 23, 1996·10 cites·8 claims
- 0941US6812531B1Matrix of memory cells fabricated by means of a self-aligned source process, comprising ROM memory cells, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Nov 2, 2004·6 cites·27 claims
- 1041US5393684AMethod of making thin oxide portions particularly in electrically erasable and programmable read-only memory cellsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Feb 28, 1995·7 cites·20 claims
- 1139US5553017AElectrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the sameSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Sep 3, 1996·6 cites·3 claims
- 1230US5600590AProcess for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devicesST MICROELECTRONICS SRL·Filed 1995·Granted Feb 4, 1997·0 cites·8 claims
- 1330US5367483AElectrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the sameSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Nov 22, 1994·0 cites·19 claims
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