Inventor · disambiguated record
Tomohisa Wada
Also filed as: WADA TOMOHISA
57 granted patents·1,287 citations·filing 1985–2020
99Inventor score
Top patents by PatentIndex Score
57 records- 0189US5659515ASemiconductor memory device capable of refresh operation in burst modeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·82 cites·12 claims
- 0289US4879690AStatic random access memory with reduced soft error rateMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Nov 7, 1989·60 cites·22 claims
- 0388US5515325ASynchronous random access memoryMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 7, 1996·47 cites·13 claims
- 0487US5724292AStatic Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 3, 1998·70 cites·22 claims
- 0585US4988888ACMOS output circuit with intermediate potential setting meansMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 29, 1991·34 cites·7 claims
- 0684US5280441ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 18, 1994·46 cites·56 claims
- 0780US6008674ASemiconductor integrated circuit device with adjustable high voltage detection circuitMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 28, 1999·46 cites·6 claims
- 0880US5663905ASemiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 2, 1997·35 cites·44 claims
- 0979US6519187B2Semiconductor memory device having read data multiplexerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 11, 2003·17 cites·4 claims
- 1079US5134585ACircuit for repairing defective bit in semiconductor memory device and repairing methodMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 28, 1992·38 cites·9 claims
- 1179US4907203ASemiconductor memory device with changeable word organization modes including a test modeMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 6, 1990·35 cites·11 claims
- 1278US5752270AMethod of executing read and write operations in a synchronous random access memoryMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 12, 1998·28 cites·3 claims
- 1377US6026036ASynchronous semiconductor memory device having set up time of external address signal reducedMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 15, 2000·41 cites·7 claims
- 1477US5301155AMultiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuitsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 5, 1994·38 cites·8 claims
- 1575US12012897B2Jet engineMITSUBISHI HEAVY IND LTD·Filed 2020·Granted Jun 18, 2024·2 cites·9 claims
- 1675US5563820ASemiconductor memory device having two layers of bit lines arranged crossing with each otherMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 8, 1996·29 cites·15 claims
- 1774US5959639AComputer graphics apparatus utilizing cache memoryMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 28, 1999·43 cites·14 claims
- 1872US5808930ASemiconductor memory device having improved wiring architectureMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 15, 1998·32 cites·27 claims
- 1972US5471427ACircuit for repairing defective bit in semiconductor memory device and repairing methodMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 28, 1995·32 cites·2 claims
- 2071US5379258ACircuit for repairing defective bit in semiconductor memory device and repairing methodMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 3, 1995·27 cites·21 claims
- 2169US5699308ASemiconductor memory device having two layers of bit lines arranged crossing with each otherMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 16, 1997·25 cites·5 claims
- 2267US5886388AStatic semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 23, 1999·26 cites·5 claims
- 2367US5841961ASemiconductor memory device including a tag memoryMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 24, 1998·26 cites·13 claims
- 2466US5528545ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 18, 1996·26 cites·18 claims
- 2566US4811155AProtection circuit for a semiconductor integrated circuit having bipolar transistorsMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 7, 1989·26 cites·8 claims
- 2664US5859806ASemiconductor memory device and computerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 12, 1999·20 cites·17 claims
- 2764US5379248ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 3, 1995·19 cites·25 claims
- 2864US4751683AStatic semiconductor memory device comprising word lines each operating at three different voltage levelsMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Jun 14, 1988·20 cites·17 claims
- 2963US4896299AStatic semiconductor memory device having function of resetting stored dataMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jan 23, 1990·19 cites·15 claims
- 3062US6023190AHigh voltage generation circuit which generates high voltage by digitally adjusting current amount flowing through capacitorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 8, 2000·17 cites·6 claims
- 3162US4893282ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jan 9, 1990·19 cites·7 claims
- 3261US5966324AStatic semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cellsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 12, 1999·18 cites·15 claims
- 3359US5929539ASemiconductor memory device adaptable to external power supplies of different voltage levelsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 27, 1999·19 cites·7 claims
- 3458US6115280ASemiconductor memory capable of burst operationMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 5, 2000·15 cites·12 claims
- 3558US5568432ASemiconductor memory device including redundancy memory cell remedying defective memory cellMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 22, 1996·18 cites·17 claims
- 3657US5781468ASemiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 14, 1998·13 cites·3 claims
- 3757US5020029AStatic semiconductor memory device with predetermined threshold voltagesMITSUBISHI ELECTRIC CORP·Filed 1990·Granted May 28, 1991·19 cites·11 claims
- 3856US5850367AStatic type semiconductor memory with latch circuit amplifying read data read on a sub bit line pair and transferring the amplified read data to a main bit line pair and operation method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 15, 1998·17 cites·8 claims
- 3954US7902481B2Method of manufacturing sealed electronic component and sealed electronic componentCITIZEN HOLDINGS CO LTD·Filed 2005·Granted Mar 8, 2011·1 cites·22 claims
- 4054US4947374ASemiconductor memeory device in which writing is inhibited in address skew period and controlling method thereofMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 7, 1990·13 cites·17 claims
- 4152US6327188B1Synchronous random access memoryMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 4, 2001·4 cites·9 claims
- 4252US6181612B1Semiconductor memory capable of burst operationMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 30, 2001·11 cites·9 claims
- 4351US6453399B2Semiconductor memory device and computer having a synchronization signal indicating that the memory data output is validMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 17, 2002·11 cites·9 claims
- 4449US6301678B1Test circuit for reducing test time in semiconductor memory device having multiple data input/output terminalsMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 9, 2001·11 cites·15 claims
- 4549US5687111AStatic type semiconductor memory device capable of operating at a low voltage and reducing a memory cell areaMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 11, 1997·15 cites·6 claims
- 4648US5886934ASemiconductor memory device capable of through rate control of external output signal waveformMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 23, 1999·11 cites·16 claims
- 4744US5546352ASemiconductor memory device having decoderMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 13, 1996·9 cites·23 claims
- 4844US5307307ASemiconductor memory device having improved bit line arrangementMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Apr 26, 1994·10 cites·12 claims
- 4943US6021081ASemiconductor memory device having strobe buffer and output bufferMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 1, 2000·9 cites·6 claims
- 5041US6026048ASynchronous random access memoryMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 15, 2000·4 cites·10 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →