Inventor · disambiguated record
Akira Hiroki
Also filed as: HIROKI AKIRA
14 granted patents·268 citations·filing 1991–2013
93Inventor score
Top patents by PatentIndex Score
14 records- 0185US9366306B2Double-rod type shock absorberSMC CORP·Filed 2013·Granted Jun 14, 2016·9 cites·13 claims
- 0277US5512771AMOS type semiconductor device having a low concentration impurity diffusion regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 30, 1996·65 cites·5 claims
- 0376US5830788AMethod for forming complementary MOS device having asymmetric region in channel regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 3, 1998·45 cites·14 claims
- 0476US5808347AMIS transistor with gate sidewall insulating layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Sep 15, 1998·34 cites·12 claims
- 0571US8757338B2Hydraulic shock absorberMIYASATO EIKO·Filed 2012·Granted Jun 24, 2014·4 cites·7 claims
- 0669US5221632AMethod of proudcing a MIS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Jun 22, 1993·26 cites·3 claims
- 0768US8857583B2Hydraulic shock absorberMIYASATO EIKO·Filed 2010·Granted Oct 14, 2014·3 cites·3 claims
- 0862US7526993B2Fluid pressure cylinder apparatus having throttle valveSMC CORP·Filed 2006·Granted May 5, 2009·4 cites·8 claims
- 0957US6355963B1MOS type semiconductor device having an impurity diffusion layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Mar 12, 2002·5 cites·6 claims
- 1056US6031268AComplementary semiconductor device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 29, 2000·18 cites·11 claims
- 1155US5675168AUnsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 7, 1997·16 cites·5 claims
- 1255US5386133ALDD FET with polysilicon sidewallsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 31, 1995·14 cites·2 claims
- 1351US6031272AMOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Feb 29, 2000·15 cites·11 claims
- 1448US5518944AMOS transistor and its fabricating methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 21, 1996·10 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Akira Hiroki files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →