Inventor · disambiguated record
Takayuki Niuya
Also filed as: NIUYA TAKAYUKI
25 granted patents·1 pending application·716 citations·filing 1991–2005
97Inventor score
Top patents by PatentIndex Score
26 records- 0193US6066545ABirdsbeak encroachment using combination of wet and dry etch for isolation nitrideTEXAS INSTRUMENTS INC·Filed 1998·Granted May 23, 2000·247 cites·4 claims
- 0287US6514352B2Cleaning method using an oxidizing agent, chelating agent and fluorine compoundTOKYO ELECTRON LTD·Filed 2001·Granted Feb 4, 2003·43 cites·18 claims
- 0387US6478035B1Cleaning device, cleaning system, treating device and cleaning methodTOKYO ELECTRON LTD·Filed 2000·Granted Nov 12, 2002·46 cites·14 claims
- 0483US6838370B1Method of manufacturing semiconductor device and manufacturing apparatusTOKYO ELECTRON LTD·Filed 2000·Granted Jan 4, 2005·35 cites·7 claims
- 0582US6277720B1Silicon nitride dopant diffusion barrier in integrated circuitsTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 21, 2001·70 cites·15 claims
- 0681US6979655B2Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2002·Granted Dec 27, 2005·22 cites·19 claims
- 0780US6265309B1Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the sameMITSUBISHI GAS CHEMICALS CO IN·Filed 1999·Granted Jul 24, 2001·78 cites·24 claims
- 0865US5563433AFrench-type semiconductor memory device with enhanced trench capacitor-transistor connectionTEXAS INSTRUMENTS INC·Filed 1992·Granted Oct 8, 1996·22 cites·5 claims
- 0961US6607650B1Method of forming a plated layer to a predetermined thicknessTOKYO ELECTRON LTD·Filed 2000·Granted Aug 19, 2003·9 cites·15 claims
- 1061US5470778AMethod of manufacturing a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 28, 1995·15 cites·23 claims
- 1157US6875288B2Cleaning agent and cleaning methodTOKYO ELECTRON LTD·Filed 2001·Granted Apr 5, 2005·6 cites·18 claims
- 1254US5914279ASilicon nitride sidewall and top surface layer separating conductorsTEXAS INSTRUMENTS INC·Filed 1997·Granted Jun 22, 1999·19 cites·15 claims
- 1352US6268246B1Method for fabricating a memory cellTEXAS INSTRUMENTS INC·Filed 1999·Granted Jul 31, 2001·16 cites·2 claims
- 1448US6127214AContact gate structure and methodTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 3, 2000·10 cites·15 claims
- 1548US2006163205A1Substrate processing method and substrate processing apparatusNIUYA TAKAYUKI·Filed 2005·Application pending·0 cites
- 1647US6946701B2Method for forming a memory integrated circuit with bitlines over gates and capacitors over bitlinesTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 20, 2005·2 cites·2 claims
- 1745US5317177ASemiconductor device and method of manufacturing the sameTEXAS INSTRUMENTS INC·Filed 1992·Granted May 31, 1994·8 cites·20 claims
- 1844US5675533ASemiconductor deviceTEXAS INSTRUMENTS INC·Filed 1996·Granted Oct 7, 1997·13 cites·6 claims
- 1943US6835672B1Selective oxidation for semiconductor device fabricationTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 28, 2004·11 cites·26 claims
- 2043US5861649ATrench-type semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1992·Granted Jan 19, 1999·9 cites·10 claims
- 2141US5804478AMethod of forming a trench-type semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 8, 1998·6 cites·3 claims
- 2241US5210446ASubstrate potential generating circuit employing Schottky diodesTEXAS INSTRUMENTS INC·Filed 1991·Granted May 11, 1993·7 cites·7 claims
- 2340US6468876B2Simple stack cell capacitor formationTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 22, 2002·2 cites·1 claims
- 2440US6214658B1Self-aligned contact structure and methodTEXAS INSTRUMENTS INC·Filed 1997·Granted Apr 10, 2001·6 cites·11 claims
- 2538US6617211B1Method for forming a memory integrated circuitTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 9, 2003·7 cites·16 claims
- 2636US5470777AMethod of fabricating random access memory device having sidewall insulating layer on the laminate structureTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 28, 1995·7 cites·8 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →