Inventor · disambiguated record
Raj Verma Purakh
Also filed as: PURAKH RAJ VERMA
15 granted patents·25 citations·filing 2015–2019
89Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD15
Top patents by PatentIndex Score
15 records- 0184US9899527B2Integrated circuits with gapsGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 20, 2018·4 cites·9 claims
- 0280US10522393B2Devices and methods of forming thereof by post single layer transfer fabrication of device isolation structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 31, 2019·4 cites·15 claims
- 0374US10529819B2High voltage Schottky diode and manufacturing method thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 7, 2020·2 cites·20 claims
- 0474US10510831B2Low on resistance high voltage metal oxide semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 17, 2019·2 cites·16 claims
- 0574US9831304B1Integrated circuits with deep trench isolations and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 28, 2017·3 cites·18 claims
- 0673US10347773B2Split gate non-volatile memory (NVM) with improved programming efficiencyGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 9, 2019·2 cites·18 claims
- 0772US10032766B2VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jul 24, 2018·2 cites·20 claims
- 0871US9960115B1Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metalGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted May 1, 2018·2 cites·20 claims
- 0969US10424655B2Dual gate LDMOS and a process of forming thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Sep 24, 2019·1 cites·20 claims
- 1067US10680099B2Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitanceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jun 9, 2020·1 cites·13 claims
- 1164US10529738B2Integrated circuits with selectively strained device regions and methods for fabricating sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 7, 2020·1 cites·9 claims
- 1260US9922868B2Integrated circuits using silicon on insulator substrates and methods of manufacturing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Mar 20, 2018·1 cites·12 claims
- 1357US10797159B2Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOSGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Oct 6, 2020·0 cites·17 claims
- 1448US10319834B2Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOSGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jun 11, 2019·0 cites·11 claims
- 1536US10193002B2MOS varactors and methods for fabricating MOS varactorsGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 29, 2019·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →