Inventor · disambiguated record
Georg Ehrentraut
Also filed as: EHRENTRAUT GEORG
16 granted patents·5 pending applications·26 citations·filing 2008–2022
88Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG9INFINEON TECHNOLOGIES AG6INFINEON TECHNOLOGIES AUSTRIA3FOERSTER CHRISTIAN1POELZL MARTIN1
Top patents by PatentIndex Score
21 records- 0185US11949009B2Semiconductor die and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Apr 2, 2024·2 cites·16 claims
- 0281US8227340B2Method for producing a copper connection between two sides of a substrateSEIDEL UWE·Filed 2009·Granted Jul 24, 2012·14 cites·19 claims
- 0379US9287376B1Method of manufacturing a gate trench with thick bottom oxideINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 15, 2016·4 cites·18 claims
- 0475US9070741B2Method of manufacturing a semiconductor device and a semiconductor workpieceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Jun 30, 2015·2 cites·24 claims
- 0574US10181511B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 15, 2019·2 cites·24 claims
- 0670US11682704B2Method of producing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 0768US9793387B2Semiconductor device including a vertical PN junction between a body region and a drift regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Oct 17, 2017·1 cites·24 claims
- 0864US9379196B2Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 28, 2016·1 cites·10 claims
- 0961US11316020B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·8 claims
- 1057US9935055B2Methods of manufacturing a semiconductor device by forming a separation trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 3, 2018·0 cites·12 claims
- 1155US10622218B2Segmented edge protection shieldINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 14, 2020·0 cites·16 claims
- 1254US9461004B2Semiconductor workpiece having a semiconductor substrate with at least two chip areasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 4, 2016·0 cites·9 claims
- 1352US2016111508A1Semiconductor device having a trench gate and method for manufacturingINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 1451US9793129B2Segmented edge protection shieldINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 17, 2017·0 cites·13 claims
- 1551US2013193510A1Semiconductor device having a trench gate and method for manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
- 1650US2008179666A1Semiconductor device having a trench gate and method for manufacturingINFINEON TECHNOLOGIES AG·Filed 2008·Application pending·0 cites
- 1749US9768273B2Method of forming a trench using epitaxial lateral overgrowthINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 1847US2011309423A1Semiconductor device having a trench gate and method for manufacturingFOERSTER CHRISTIAN·Filed 2011·Application pending·0 cites
- 1945US11195713B2Methods of forming a silicon-insulator layer and semiconductor device having the sameINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 7, 2021·0 cites·15 claims
- 2038US8803230B2Semiconductor transistor having trench contacts and method for forming thereforPOELZL MARTIN·Filed 2012·Granted Aug 12, 2014·0 cites·23 claims
- 2133US2017110331A1Methods for Forming Semiconductor DevicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →