Assignee
POELZL MARTIN
AT·11 granted patents·1 pending application·17 citations·filing 2007–2012
Top patents by PatentIndex Score
12 records- 0172US9082746B2Method for forming self-aligned trench contacts of semiconductor components and a semiconductor componentPOELZL MARTIN·Filed 2012·Granted Jul 14, 2015·2 cites·25 claims
- 0272US8642459B2Method for forming a semiconductor device with an isolation region on a gate electrodePOELZL MARTIN·Filed 2008·Granted Feb 4, 2014·4 cites·23 claims
- 0372US8633539B2Trench transistor and manufacturing method of the trench transistorPOELZL MARTIN·Filed 2011·Granted Jan 21, 2014·3 cites·21 claims
- 0469US8097916B2Method for insulating a semiconducting material in a trench from a substratePOELZL MARTIN·Filed 2007·Granted Jan 17, 2012·3 cites·13 claims
- 0568US8313995B2Method for manufacturing a semiconductor devicePOELZL MARTIN·Filed 2011·Granted Nov 20, 2012·2 cites·3 claims
- 0666US8637367B2Method for producing an insulation layer between two electrodesPOELZL MARTIN·Filed 2011·Granted Jan 28, 2014·2 cites·19 claims
- 0757US8062954B2Method for manufacturing a field plate in a trench of a power transistorPOELZL MARTIN·Filed 2009·Granted Nov 22, 2011·1 cites·16 claims
- 0851US8445956B2Method for manufacturing a semiconductor device and semiconductor devicePOELZL MARTIN·Filed 2008·Granted May 21, 2013·0 cites·6 claims
- 0949US8778751B2Method for producing a structure element and semiconductor component comprising a structure elementPOELZL MARTIN·Filed 2011·Granted Jul 15, 2014·0 cites·12 claims
- 1046US8093654B2Vertical transistor componentPOELZL MARTIN·Filed 2010·Granted Jan 10, 2012·0 cites·17 claims
- 1146US2012091563A1Method for insulating a semiconductor material in a trench from a substratePOELZL MARTIN·Filed 2011·Application pending·0 cites
- 1238US8803230B2Semiconductor transistor having trench contacts and method for forming thereforPOELZL MARTIN·Filed 2012·Granted Aug 12, 2014·0 cites·23 claims
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