Inventor · disambiguated record
Adam Makosiej
Also filed as: MAKOSIEJ ADAM
15 granted patents·4 pending applications·28 citations·filing 2012–2021
88Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE15COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1COMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES1Commissariat à I'Energie Atomique et aux Energies Alternatives1XENERGIC AB1
Top patents by PatentIndex Score
19 records- 0180US10079056B2SRAM memory bit cell comprising n-TFET and p-TFETCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Sep 18, 2018·5 cites·13 claims
- 0274US9542996B2Device with SRAM memory cells including means for polarizing wells of memory cell transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jan 10, 2017·4 cites·14 claims
- 0373US10839906B2In memory computing (IMC) memory circuit having 6T cellsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Nov 17, 2020·3 cites·15 claims
- 0470US9679649B2Reconfigurable camCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2016·Granted Jun 13, 2017·3 cites·11 claims
- 0570US9252269B2Tunnel effect transistorCommissariat à l'énergie atomique et aux énergies alternatives·Filed 2014·Granted Feb 2, 2016·3 cites·10 claims
- 0669US9685222B2Memory cell with read transistors of the TFET and MOSFET type to reduce leakage currentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jun 20, 2017·3 cites·10 claims
- 0766US10910040B2Memory circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Feb 2, 2021·2 cites·10 claims
- 0865US9508434B2Programmable-resistance non-volatile memoryCommissariat à I'Energie Atomique et aux Energies Alternatives·Filed 2015·Granted Nov 29, 2016·5 cites·8 claims
- 0945US2021167072A13d memory device comprising sram type memory cells with adjustable back-biasCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Application pending·0 cites
- 1042US12374374B2Precharge circuitry for memoryXENERGIC AB·Filed 2021·Granted Jul 29, 2025·0 cites·19 claims
- 1139US10685700B2PVT detection circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jun 16, 2020·0 cites·11 claims
- 1239US2019080761A1Cam memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Application pending·0 cites
- 1338US2020185392A13d integrated circuit random-access memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Application pending·0 cites
- 1434US10923191B23D SRAM/ROM with several superimposed layers and reconfigurable by transistor rear biasingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 16, 2021·0 cites·11 claims
- 1533US10110203B2Tri-state inverter, D latch and master-slave flip-flop comprising TFETsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Oct 23, 2018·0 cites·10 claims
- 1632US2018268890A1Refresh-free tfet memory latchCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Application pending·0 cites
- 1731US10861520B2SRAM/ROM memory reconfigurable by supply connectionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Dec 8, 2020·0 cites·16 claims
- 1830US10748604B2SRAM memory with improved end-of-read triggeringCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 18, 2020·0 cites·19 claims
- 1930US9099993B2Circuit for reverse biasing inverters for reducing the power consumption of an SRAM memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Aug 4, 2015·0 cites·16 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →