Inventor · disambiguated record
Toshiro Nakanishi
Also filed as: NAKANISHI TOSHIRO
25 granted patents·6 pending applications·326 citations·filing 1991–2023
96Inventor score
Top patents by PatentIndex Score
31 records- 0197US9536970B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2011·Granted Jan 3, 2017·43 cites·12 claims
- 0293US9721957B2Static random access memory (SRAM) cells including vertical channel transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 1, 2017·17 cites·13 claims
- 0392US10903327B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 26, 2021·2 cites·19 claims
- 0490US9564435B2Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor deviceCHUNG EUN-AE·Filed 2015·Granted Feb 7, 2017·16 cites·28 claims
- 0590US5693578AMethod of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistanceFUJITSU LTD·Filed 1996·Granted Dec 2, 1997·111 cites·23 claims
- 0687US9768266B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 19, 2017·3 cites·15 claims
- 0784US11888042B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 30, 2024·0 cites·19 claims
- 0883US9564499B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 7, 2017·3 cites·20 claims
- 0982US2023044895A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1080US8598647B2Three-dimensional semiconductor memory devicesKIM DONGWOO·Filed 2011·Granted Dec 3, 2013·6 cites·14 claims
- 1178US9153696B2Semiconductor device having tri-gate transistor and method of manufacturing the sameAN TAE-HYUN·Filed 2014·Granted Oct 6, 2015·7 cites·13 claims
- 1278US6541393B2Method for fabricating semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 2001·Granted Apr 1, 2003·21 cites·17 claims
- 1377US5504022AMethod of making a semiconductor memory device having a floating gateFUJITSU LTD·Filed 1993·Granted Apr 2, 1996·42 cites·9 claims
- 1476US11588032B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 1569US6992010B2Gate structure and method of manufactureWINBOND ELECTRONICS CORP·Filed 2003·Granted Jan 31, 2006·17 cites·7 claims
- 1668US9932973B2Reciprocating pump with high-pressure sealMARUYAMA MFG CO·Filed 2013·Granted Apr 3, 2018·1 cites·9 claims
- 1767US9997523B2Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 12, 2018·1 cites·4 claims
- 1864US8319276B2Non-volatile semiconductor memory devices having charge trap layers between word lines and active regions thereofNAKANISHI TOSHIRO·Filed 2010·Granted Nov 27, 2012·2 cites·13 claims
- 1963US6984267B2Manufacture system for semiconductor device with thin gate insulating filmFUJITSU LTD·Filed 2002·Granted Jan 10, 2006·8 cites·6 claims
- 2061US9443735B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·1 cites·11 claims
- 2161US2017345907A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2017·Application pending·0 cites
- 2259US6468926B1Manufacture method and system for semiconductor device with thin gate insulating film of oxynitrideFUJITSU LTD·Filed 1999·Granted Oct 22, 2002·22 cites·23 claims
- 2340US9064895B2Vertical memory devices and methods of manufacturing the sameKIM BI-O·Filed 2013·Granted Jun 23, 2015·0 cites·14 claims
- 2440US8785276B2Methods for fabricating a cell string and a non-volatile memory device including the cell stringNAKANISHI TOSHIRO·Filed 2011·Granted Jul 22, 2014·0 cites·18 claims
- 2538US8278698B2Nonvolatile memory device and method of forming the sameNAKANISHI TOSHIRO·Filed 2010·Granted Oct 2, 2012·0 cites·9 claims
- 2638US2017317214A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 2734US2003222303A1Non-volatile semiconductor memory device and method for fabricating the sameFUJITSU LTD·Filed 2003·Application pending·0 cites
- 2832US2014054675A1Vertical type semiconductor devices and methods of manufacturing the sameKIM CHAE HO·Filed 2013·Application pending·0 cites
- 2931US5217908ASemiconductor device having an insulator film of silicon oxide in which oh ions are incorporatedFUJITSU LTD·Filed 1991·Granted Jun 8, 1993·3 cites·13 claims
- 3030US2010252909A1Three-Dimensional Memory DevicesNAKANISHI TOSHIRO·Filed 2010·Application pending·0 cites
- 3129US8123505B2Reciprocating pump with sealing collar arrangementNAKANISHI TOSHIRO·Filed 2007·Granted Feb 28, 2012·0 cites·14 claims
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