Inventor · disambiguated record
Jeffrey R. Childress
Also filed as: CHILDRESS JEFFREY · CHILDRESS JEFFREY R · CHILDRESS JEFFREY ROBINSON
98 granted patents·9 pending applications·1,314 citations·filing 1994–2024
99Inventor score
Files withHITACHI GLOBAL STORAGE TECH41HGST Netherlands BV17ALLEGRO MICROSYSTEMS LLC13IBM8HITACHI GLOBAL STORAGE TECH NL7
Top patents by PatentIndex Score
107 records- 0198US6347049B1Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrierIBM·Filed 2001·Granted Feb 12, 2002·308 cites·13 claims
- 0297US7791844B2Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostrictionHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Sep 7, 2010·49 cites·18 claims
- 0396US7298597B2Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic couplingHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Nov 20, 2007·35 cites·22 claims
- 0496US6847510B2Magnetic tunnel junction device with bottom free layer and improved underlayerHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jan 25, 2005·66 cites·19 claims
- 0596US6686068B2Heterogeneous spacers for CPP GMR stacksIBM·Filed 2001·Granted Feb 3, 2004·89 cites·15 claims
- 0695US7551409B2Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structureHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jun 23, 2009·22 cites·21 claims
- 0793US8416539B2Magnetic field sensing system using spin-torque diode effectCAREY MATTHEW J·Filed 2008·Granted Apr 9, 2013·18 cites·14 claims
- 0893US8335056B2CPP sensors with hard bias structures that shunt sense current towards a shieldBALAMANE HAMID·Filed 2007·Granted Dec 18, 2012·16 cites·8 claims
- 0993US7411765B2CPP-GMR sensor with non-orthogonal free and reference layer magnetization orientationHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Aug 12, 2008·25 cites·32 claims
- 1093US7382573B2Magnetic write head having a magnetically anisotropic write poleHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jun 3, 2008·11 cites·14 claims
- 1193US7363699B2Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layersHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Apr 29, 2008·14 cites·17 claims
- 1292US7382586B2Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jun 3, 2008·22 cites·41 claims
- 1392US6671139B2In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layerIBM·Filed 2002·Granted Dec 30, 2003·43 cites·18 claims
- 1492US6631055B2Tunnel valve flux guide structure formed by oxidation of pinned layerIBM·Filed 2001·Granted Oct 7, 2003·34 cites·29 claims
- 1592US6577476B1Flux guide structure for a spin valve transistor which includes a slider body semiconductor layerIBM·Filed 2002·Granted Jun 10, 2003·36 cites·35 claims
- 1691US8233247B2Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structuresCAREY MATTHEW J·Filed 2008·Granted Jul 31, 2012·14 cites·14 claims
- 1791US6452761B1Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivityIBM·Filed 2000·Granted Sep 17, 2002·40 cites·18 claims
- 1890US8922953B1Dual current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with antiparallel-free (APF) structure and integrated reference layers/shieldsHGST Netherlands BV·Filed 2014·Granted Dec 30, 2014·11 cites·20 claims
- 1990US8576519B1Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edgesHGST Netherlands BV·Filed 2012·Granted Nov 5, 2013·12 cites·18 claims
- 2090US8015694B2Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensorHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Sep 13, 2011·22 cites·4 claims
- 2190US7466515B2Magnetic medium having a soft underlayer with a magnetic anisotropyHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Dec 16, 2008·6 cites·8 claims
- 2289US9412399B2Underlayer for reference layer of polycrystalline CPP GMR sensor stackHGST Netherlands BV·Filed 2014·Granted Aug 9, 2016·9 cites·11 claims
- 2389US7360299B2Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Apr 22, 2008·8 cites·17 claims
- 2489US7230805B2Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding stepHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jun 12, 2007·7 cites·43 claims
- 2588US12204005B2Magnetoresistive sensor element having a wide linear response and robust nominal performance and manufacturing method thereofALLEGRO MICROSYSTEMS LLC·Filed 2021·Granted Jan 21, 2025·1 cites·8 claims
- 2688US8514525B2Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shieldCHILDRESS JEFFREY R·Filed 2010·Granted Aug 20, 2013·11 cites·22 claims
- 2788US7360300B2Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Apr 22, 2008·8 cites·18 claims
- 2888US6870717B2Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding stepHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Mar 22, 2005·21 cites·22 claims
- 2987US7324313B2Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stabilityHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Jan 29, 2008·20 cites·39 claims
- 3086US7423847B2Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edgeHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Sep 9, 2008·7 cites·20 claims
- 3185US8670217B1Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropyHGST Netherlands BV·Filed 2013·Granted Mar 11, 2014·7 cites·18 claims
- 3285US7529066B2Magnetoresistive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion millingHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 5, 2009·6 cites·14 claims
- 3385US7460343B2Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Dec 2, 2008·12 cites·31 claims
- 3485US7436634B2Magnetically anisotropic shield for use in magnetic data recordingHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 14, 2008·9 cites·19 claims
- 3585US7199984B2Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic couplingHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Apr 3, 2007·16 cites·36 claims
- 3684US9099115B2Magnetic sensor with doped ferromagnetic cap and/or underlayerHGST Netherlands BV·Filed 2013·Granted Aug 4, 2015·6 cites·20 claims
- 3784US8130474B2CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientationCHILDRESS JEFFREY ROBINSON·Filed 2008·Granted Mar 6, 2012·10 cites·25 claims
- 3884US7833388B2End point detection for direct ion milling to induce magnetic anisotropy in a magnetic layerHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Nov 16, 2010·3 cites·24 claims
- 3984US7558028B2Magnetic head with improved CPP sensor using Heusler alloysHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jul 7, 2009·13 cites·23 claims
- 4084US6542341B1Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layerIBM·Filed 1999·Granted Apr 1, 2003·40 cites·22 claims
- 4183US8743511B2CPP-GMR sensor with corrosion resistent spacer layer and higher signal/noise ratioCHILDRESS JEFFREY R·Filed 2011·Granted Jun 3, 2014·7 cites·6 claims
- 4283US7450350B2Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having segregated grains of a ferromagnetic material and additive Cu, Au or AgHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Nov 11, 2008·5 cites·26 claims
- 4382US9047891B1Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with indium-zinc-oxide (IZO) spacer layerHGST Netherlands BV·Filed 2014·Granted Jun 2, 2015·5 cites·20 claims
- 4482US7957106B2Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read elementHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Jun 7, 2011·4 cites·8 claims
- 4582US6977801B2Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Dec 20, 2005·32 cites·22 claims
- 4681US8617644B2Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealingCAREY MATTHEW J·Filed 2012·Granted Dec 31, 2013·5 cites·13 claims
- 4781US8351165B2Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers and Ag or AgCu spacer layerHITACHI GLOBAL STORAGE TECH NL·Filed 2010·Granted Jan 8, 2013·5 cites·24 claims
- 4881US7106561B2Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layerHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Sep 12, 2006·13 cites·25 claims
- 4980US7580229B2Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noiseHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Aug 25, 2009·4 cites·21 claims
- 5080US7043823B2Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regionsIBM·Filed 2004·Granted May 16, 2006·19 cites·24 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →