Inventor · disambiguated record
Koichi Ohto
Also filed as: OHTO KOICHI
31 granted patents·7 pending applications·261 citations·filing 1999–2012
97Inventor score
Top patents by PatentIndex Score
38 records- 0189US7763979B2Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2006·Granted Jul 27, 2010·12 cites·26 claims
- 0289US6787480B2Manufacturing method of semicondcutor deviceNEC CORP·Filed 2002·Granted Sep 7, 2004·49 cites·3 claims
- 0387US7180191B2Semiconductor device and method of manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Feb 20, 2007·14 cites·20 claims
- 0486US7563705B2Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Jul 21, 2009·10 cites·9 claims
- 0584US7737555B2Semiconductor method having silicon-diffused metal wiring layerNEC ELECTRONICS CORP·Filed 2006·Granted Jun 15, 2010·6 cites·10 claims
- 0683US7615498B2Method of manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Granted Nov 10, 2009·10 cites·6 claims
- 0779US7473630B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2006·Granted Jan 6, 2009·7 cites·7 claims
- 0879US7391115B2Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2004·Granted Jun 24, 2008·23 cites·4 claims
- 0978US7119441B2Semiconductor interconnect structureNEC ELECTRONICS CORP·Filed 2005·Granted Oct 10, 2006·7 cites·9 claims
- 1077US7842602B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2007·Granted Nov 30, 2010·3 cites·25 claims
- 1176US7531891B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted May 12, 2009·22 cites·13 claims
- 1275US8749058B2Semiconductor device and manufacturing method thereofUSAMI TATSUYA·Filed 2011·Granted Jun 10, 2014·4 cites·32 claims
- 1374US7833901B2Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layerNEC ELECTRONICS CORP·Filed 2006·Granted Nov 16, 2010·5 cites·44 claims
- 1474US7745937B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Jun 29, 2010·4 cites·15 claims
- 1574US7649258B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Jan 19, 2010·6 cites·16 claims
- 1673US8486836B2Semiconductor device and method of manufacturing the sameOSHIDA DAISUKE·Filed 2011·Granted Jul 16, 2013·3 cites·8 claims
- 1772US7132732B2Semiconductor device having two distinct sioch layersNEC ELECTRONICS CORP·Filed 2004·Granted Nov 7, 2006·16 cites·33 claims
- 1870US7557447B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2007·Granted Jul 7, 2009·4 cites·19 claims
- 1968US6879042B2Semiconductor device and method and apparatus for manufacturing the sameNEC ELECTRONICS CORP·Filed 2001·Granted Apr 12, 2005·13 cites·8 claims
- 2067US8642467B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodOHTO KOICHI·Filed 2012·Granted Feb 4, 2014·1 cites·28 claims
- 2167US8030737B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 4, 2011·3 cites·13 claims
- 2267US7687917B2Single damascene structure semiconductor device having silicon-diffused metal wiring layerNEC ELECTRONICS CORP·Filed 2003·Granted Mar 30, 2010·7 cites·13 claims
- 2367US7564132B2Semiconductor chipNEC ELECTRONICS CORP·Filed 2006·Granted Jul 21, 2009·2 cites·19 claims
- 2466US8115318B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodOHTO KOICHI·Filed 2010·Granted Feb 14, 2012·1 cites·17 claims
- 2565US7268087B2Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted Sep 11, 2007·10 cites·5 claims
- 2664US8435828B2Method of manufacturing semiconductor deviceYAMAMOTO HIRONORI·Filed 2011·Granted May 7, 2013·1 cites·24 claims
- 2763US7135776B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2005·Granted Nov 14, 2006·2 cites·12 claims
- 2863US7074698B2Method of fabricating semiconductor device using plasma-enhanced CVDNEC ELECTRONICS CORP·Filed 2004·Granted Jul 11, 2006·5 cites·27 claims
- 2960US7910474B2Method of manufacturing a semiconductor deviceNEC CORP·Filed 2008·Granted Mar 22, 2011·1 cites·12 claims
- 3046US7897475B2Semiconductor device having projection on lower electrode and method for forming the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Mar 1, 2011·0 cites·11 claims
- 3145US2004152334A1Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereofNEC ELECTONICS CORP·Filed 2003·Application pending·0 cites
- 3244US6335277B2Method for forming metal nitride filmNEC CORP·Filed 1999·Granted Jan 1, 2002·10 cites·10 claims
- 3343US2004029380A1Method for forming a capping layer on a copper interconnectNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 3442US2002197865A1Method for forming a capping layer on a copper interconnectNEC CORP·Filed 2002·Application pending·0 cites
- 3541US2003155657A1Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 3640US2001047759A1Plasma CVD apparatusFiled 2001·Application pending·0 cites
- 3740US2001003064A1Method for fabricating semiconductor device and apparatus for fabricating sameNEC CORP·Filed 2000·Application pending·0 cites
- 3837US2003209738A1Semiconductor device having silicon-including metal wiring layer and its manufacturing methodNEC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →