Inventor · disambiguated record
Edward P. Maciejewski
Also filed as: MACIEJEWSKI EDWARD · MACIEJEWSKI EDWARD P
35 granted patents·1 pending application·400 citations·filing 1998–2019
97Inventor score
Top patents by PatentIndex Score
36 records- 0198US9437496B1Merged source drain epitaxyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·26 cites·20 claims
- 0296US8354309B2Method of providing threshold voltage adjustment through gate dielectric stack modificationIBM·Filed 2012·Granted Jan 15, 2013·24 cites·20 claims
- 0392US6991979B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2003·Granted Jan 31, 2006·52 cites·9 claims
- 0490US9595518B1Fin-type metal-semiconductor resistors and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 14, 2017·10 cites·15 claims
- 0589US5959335ADevice design for enhanced avalanche SOI CMOSIBM·Filed 1998·Granted Sep 28, 1999·67 cites·11 claims
- 0686US7504875B2Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuitIBM·Filed 2007·Granted Mar 17, 2009·10 cites·20 claims
- 0786US7295057B2Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuitIBM·Filed 2005·Granted Nov 13, 2007·11 cites·18 claims
- 0886US6249029B1Device method for enhanced avalanche SOI CMOSIBM·Filed 1999·Granted Jun 19, 2001·54 cites·10 claims
- 0984US6972614B2Circuits associated with fusible elements for establishing and detecting of the states of those elementsIBM·Filed 2004·Granted Dec 6, 2005·35 cites·20 claims
- 1082US9431339B2Wiring structure for trench fuse component with methods of fabricationIBM·Filed 2014·Granted Aug 30, 2016·5 cites·20 claims
- 1182US8633096B2Creating anisotropically diffused junctions in field effect transistor devicesGREENE BRIAN J·Filed 2010·Granted Jan 21, 2014·5 cites·13 claims
- 1280US7091128B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2005·Granted Aug 15, 2006·6 cites·10 claims
- 1379US6653710B2Fuse structure with thermal and crack-stop protectionIBM·Filed 2001·Granted Nov 25, 2003·27 cites·16 claims
- 1478US8106455B2Threshold voltage adjustment through gate dielectric stack modificationGREENE BRIAN J·Filed 2009·Granted Jan 31, 2012·6 cites·19 claims
- 1575US8456169B2High speed measurement of random variation/yield in integrated circuit device testingBHUSHAN MANJUL·Filed 2010·Granted Jun 4, 2013·3 cites·20 claims
- 1672US7242072B2Electrically programmable fuse for silicon-on-insulator (SOI) technologyIBM·Filed 2004·Granted Jul 10, 2007·15 cites·16 claims
- 1772US6692998B2Integrated high quality diodeIBM·Filed 2000·Granted Feb 17, 2004·18 cites·16 claims
- 1871US7227204B2Structure for improved diode idealityIBM·Filed 2005·Granted Jun 5, 2007·6 cites·4 claims
- 1967US8173531B2Structure and method to improve threshold voltage of MOSFETS including a high K dielectricFANG SUNFEI·Filed 2009·Granted May 8, 2012·3 cites·19 claims
- 2066US9431340B2Wiring structure for trench fuse component with methods of fabricationIBM·Filed 2015·Granted Aug 30, 2016·1 cites·12 claims
- 2164US7354805B2Method of making electrically programmable fuse for silicon-on-insulator (SOI) technologyIBM·Filed 2007·Granted Apr 8, 2008·2 cites·9 claims
- 2263US6980009B2Structure for measurement of capacitance of ultra-thin dielectricsIBM·Filed 2003·Granted Dec 27, 2005·10 cites·25 claims
- 2361US8779551B2Gated diode structure for eliminating RIE damage from cap removalCHOU ANTHONY I·Filed 2012·Granted Jul 15, 2014·1 cites·10 claims
- 2457US8912626B2eFuse and method of fabricationMACIEJEWSKI EDWARD P·Filed 2011·Granted Dec 16, 2014·1 cites·11 claims
- 2556US8980720B2eFUSE and method of fabricationIBM·Filed 2014·Granted Mar 17, 2015·0 cites·8 claims
- 2655US8796771B2Creating anisotropically diffused junctions in field effect transistor devicesIBM·Filed 2013·Granted Aug 5, 2014·0 cites·12 claims
- 2754US9064972B2Method of forming a gated diode structure for eliminating RIE damage from cap removalIBM·Filed 2014·Granted Jun 23, 2015·0 cites·11 claims
- 2852US7408421B2Determining thermal absorption using ring oscillatorIBM·Filed 2006·Granted Aug 5, 2008·2 cites·2 claims
- 2952US7396694B2Structure for monitoring semiconductor polysilicon gate profileIBM·Filed 2006·Granted Jul 8, 2008·0 cites·5 claims
- 3048US9209200B2Methods for forming a self-aligned maskless junction butting for integrated circuitsIBM·Filed 2013·Granted Dec 8, 2015·0 cites·14 claims
- 3148US8513085B2Structure and method to improve threshold voltage of MOSFETs including a high k dielectricFANG SUNFEI·Filed 2012·Granted Aug 20, 2013·0 cites·20 claims
- 3247US7583125B2Methods and apparatus for pulse generation used in characterizing electronic fusesIBM·Filed 2007·Granted Sep 1, 2009·0 cites·14 claims
- 3345US10796973B2Test structures connected with the lowest metallization levels in an interconnect structureGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 6, 2020·0 cites·17 claims
- 3444US10790204B2Test structure leveraging the lowest metallization level of an interconnect structureGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 29, 2020·0 cites·18 claims
- 3544US7135346B2Structure for monitoring semiconductor polysilicon gate profileIBM·Filed 2004·Granted Nov 14, 2006·0 cites·10 claims
- 3643US2015333145A1High density finfet devices with unmerged finsIBM·Filed 2014·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →