Inventor · disambiguated record
Shinya Asami
Also filed as: ASAMI SHINYA
29 granted patents·3 pending applications·1,743 citations·filing 1995–2025
98Inventor score
Files withTOYODA GOSEI KK32
Top patents by PatentIndex Score
32 records- 0198US6426512B1Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Jul 30, 2002·222 cites·12 claims
- 0297US6342404B1Group III nitride compound semiconductor device and method for producingTOYODA GOSEI KK·Filed 2000·Granted Jan 29, 2002·137 cites·5 claims
- 0396US6982435B2Group III nitride compound semiconductor device and method for producing the sameTOYODA GOSEI KK·Filed 2001·Granted Jan 3, 2006·100 cites·24 claims
- 0496US6841808B2Group III nitride compound semiconductor device and method for producing the sameTOYODA GOSEI KK·Filed 2001·Granted Jan 11, 2005·124 cites·18 claims
- 0596US6040588ASemiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Mar 21, 2000·112 cites·10 claims
- 0695US6420733B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2001·Granted Jul 16, 2002·80 cites·7 claims
- 0795US6326236B1Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2000·Granted Dec 4, 2001·78 cites·2 claims
- 0894US6541293B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 1, 2003·63 cites·4 claims
- 0991US5945689ALight-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1996·Granted Aug 31, 1999·111 cites·39 claims
- 1090US6593016B1Group III nitride compound semiconductor device and producing method thereofTOYODA GOSEI KK·Filed 2000·Granted Jul 15, 2003·41 cites·6 claims
- 1189US6713789B1Group III nitride compound semiconductor device and method of producing the sameTOYODA GOSEI KK·Filed 2000·Granted Mar 30, 2004·42 cites·37 claims
- 1289US5959401ALight-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1997·Granted Sep 28, 1999·133 cites·13 claims
- 1387US6821800B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Nov 23, 2004·29 cites·4 claims
- 1487US6423984B1Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 1999·Granted Jul 23, 2002·85 cites·5 claims
- 1583US6531719B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Mar 11, 2003·35 cites·74 claims
- 1682US6623998B2Method for manufacturing group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2002·Granted Sep 23, 2003·32 cites·74 claims
- 1781US6939733B2Group III nitride compound semiconductor device and method of producing the sameTOYODA GOSEI KK·Filed 2003·Granted Sep 6, 2005·20 cites·17 claims
- 1880US5753939ALight-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formedTOYODA GOSEI KK·Filed 1997·Granted May 19, 1998·80 cites·32 claims
- 1977US6288416B1Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1999·Granted Sep 11, 2001·44 cites·16 claims
- 2074US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 2174US5587593ALight-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 1995·Granted Dec 24, 1996·55 cites·1 claims
- 2273US6853009B2Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2002·Granted Feb 8, 2005·16 cites·4 claims
- 2368US6645785B2Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2001·Granted Nov 11, 2003·11 cites·20 claims
- 2465US6872965B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Mar 29, 2005·11 cites·11 claims
- 2562US7030414B2III group nitride compound semiconductor luminescent elementTOYODA GOSEI KK·Filed 2002·Granted Apr 18, 2006·10 cites·20 claims
- 2661US2025369153A1Method for manufacturing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 2758US7045809B2Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted May 16, 2006·5 cites·9 claims
- 2857US6918961B2Group III nitride compound semiconductor device and producing method thereforTOYODA GOSEI KK·Filed 2003·Granted Jul 19, 2005·4 cites·14 claims
- 2956US6838706B2Group III nitride compound semiconductor light-emitting device which emits light having a wavelength in a range from 360 to 550 NMTOYODA GOSEI KK·Filed 2001·Granted Jan 4, 2005·6 cites·35 claims
- 3044US2003205718A1Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2003·Application pending·0 cites
- 3143US2004018657A1Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2003·Application pending·0 cites
- 3230US7045829B2Light-emitting semiconductor device using Group III nitride compoundTOYODA GOSEI KK·Filed 1996·Granted May 16, 2006·1 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →