Inventor · disambiguated record
Toshiaki Chiyo
Also filed as: CHIYO TOSHIAKI
21 granted patents·1,294 citations·filing 1998–2003
97Inventor score
Files withTOYODA GOSEI KK21
Top patents by PatentIndex Score
21 records- 0198US6426512B1Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Jul 30, 2002·222 cites·12 claims
- 0297US6342404B1Group III nitride compound semiconductor device and method for producingTOYODA GOSEI KK·Filed 2000·Granted Jan 29, 2002·137 cites·5 claims
- 0396US6982435B2Group III nitride compound semiconductor device and method for producing the sameTOYODA GOSEI KK·Filed 2001·Granted Jan 3, 2006·100 cites·24 claims
- 0496US6841808B2Group III nitride compound semiconductor device and method for producing the sameTOYODA GOSEI KK·Filed 2001·Granted Jan 11, 2005·124 cites·18 claims
- 0594US7128846B2Process for producing group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Oct 31, 2006·84 cites·20 claims
- 0693US6100545AGaN type semiconductor deviceTOYODA GOSEI KK·Filed 1998·Granted Aug 8, 2000·188 cites·8 claims
- 0791US6335217B1GaN type semiconductor device fabricationTOYODA GOSEI KK·Filed 2000·Granted Jan 1, 2002·83 cites·10 claims
- 0890US6875629B2III group nitride based semiconductor element and method for manufacture thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 5, 2005·47 cites·11 claims
- 0990US6593016B1Group III nitride compound semiconductor device and producing method thereofTOYODA GOSEI KK·Filed 2000·Granted Jul 15, 2003·41 cites·6 claims
- 1089US6713789B1Group III nitride compound semiconductor device and method of producing the sameTOYODA GOSEI KK·Filed 2000·Granted Mar 30, 2004·42 cites·37 claims
- 1185US6589808B2GaN type semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Jul 8, 2003·46 cites·49 claims
- 1283US6531719B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Mar 11, 2003·35 cites·74 claims
- 1382US6623998B2Method for manufacturing group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2002·Granted Sep 23, 2003·32 cites·74 claims
- 1481US6939733B2Group III nitride compound semiconductor device and method of producing the sameTOYODA GOSEI KK·Filed 2003·Granted Sep 6, 2005·20 cites·17 claims
- 1581US6830949B2Method for producing group-III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Dec 14, 2004·25 cites·16 claims
- 1677US7312472B2Compound semiconductor element based on Group III element nitrideTOYODA GOSEI KK·Filed 2002·Granted Dec 25, 2007·19 cites·20 claims
- 1776US6943128B2Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor elementTOYODA GOSEI KK·Filed 2001·Granted Sep 13, 2005·18 cites·20 claims
- 1869US7029939B2P-type semiconductor manufacturing method and semiconductor deviceTOYODA GOSEI KK·Filed 2002·Granted Apr 18, 2006·14 cites·13 claims
- 1965US6872965B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Mar 29, 2005·11 cites·11 claims
- 2057US6918961B2Group III nitride compound semiconductor device and producing method thereforTOYODA GOSEI KK·Filed 2003·Granted Jul 19, 2005·4 cites·14 claims
- 2148US6861275B2Method for producing group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2003·Granted Mar 1, 2005·2 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →