Inventor · disambiguated record
Shoichi Iwasa
Also filed as: IWASA SHOICHI
33 granted patents·1 pending application·1,375 citations·filing 1989–2005
98Inventor score
Top patents by PatentIndex Score
34 records- 0197US5596527AElectrically alterable n-bit per cell non-volatile memory with reference cellsNIPPON STEEL CORP·Filed 1995·Granted Jan 21, 1997·251 cites·5 claims
- 0297US5436481AMOS-type semiconductor device and method of making the sameNIPPON STEEL CORP·Filed 1994·Granted Jul 25, 1995·184 cites·15 claims
- 0396US5424978ANon-volatile semiconductor memory cell capable of storing more than two different data and method of using the sameNIPPON STEEL CORP·Filed 1994·Granted Jun 13, 1995·176 cites·13 claims
- 0496US5418743AMethod of writing into non-volatile semiconductor memoryNIPPON STEEL CORP·Filed 1993·Granted May 23, 1995·158 cites·13 claims
- 0586US6468887B2Semiconductor device and a method of manufacturing the sameNIPPON STEEL CORP·Filed 2001·Granted Oct 22, 2002·40 cites·30 claims
- 0683US5323342AMOS memory deviceNIPPON STEEL CORP·Filed 1992·Granted Jun 21, 1994·53 cites·4 claims
- 0780US5644151ASemiconductor memory device and method for fabricating the sameNIPPON STEEL CORP·Filed 1995·Granted Jul 1, 1997·45 cites·27 claims
- 0879US5381028ANonvolatile semiconductor memory with raised source and drainNIPPON STEEL CORP·Filed 1994·Granted Jan 10, 1995·44 cites·11 claims
- 0977US6917076B2Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jul 12, 2005·20 cites·16 claims
- 1077US6288431B1Semiconductor device and a method of manufacturing the sameNIPPON STEEL CORP·Filed 1998·Granted Sep 11, 2001·38 cites·24 claims
- 1176US5798545ASemiconductor storage deviceNIPPON STEEL CORP·Filed 1995·Granted Aug 25, 1998·35 cites·47 claims
- 1276US5042008ANon-volatile semiconductor memory device having word lines ("control gates") embedded in substrateNEC CORP·Filed 1990·Granted Aug 20, 1991·40 cites·8 claims
- 1372US5814850ASemiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltageNIPPON STEEL CORP·Filed 1996·Granted Sep 29, 1998·32 cites·68 claims
- 1472US5471423ANon-volatile semiconductor memory deviceNIPPON STEEL CORP·Filed 1994·Granted Nov 28, 1995·32 cites·17 claims
- 1568US5959319ASemiconductor memory device having word line conductors provided at lower level than memory cell capacitor and method of manufacturing sameNIPPON STEEL CORP·Filed 1996·Granted Sep 28, 1999·22 cites·5 claims
- 1665US6657229B1Semiconductor device having multiple transistors sharing a common gateUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 2, 2003·26 cites·9 claims
- 1762US5572464ASemiconductor memory device and method of using the sameNIPPON STEEL CORP·Filed 1995·Granted Nov 5, 1996·22 cites·4 claims
- 1861US5569947AInsulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistorNIPPON STEEL CORP·Filed 1995·Granted Oct 29, 1996·19 cites·16 claims
- 1958US4982377AErasable programmable read only memory device improved in operation speed and in the amount of read out currentNEC CORP·Filed 1989·Granted Jan 1, 1991·16 cites·14 claims
- 2057US6124638ASemiconductor device and a method of manufacturing the sameUNITED MICROELECTRONICS·Filed 1997·Granted Sep 26, 2000·15 cites·67 claims
- 2153US5291047AFloating gate type electrically programmable read only memory cell with variable threshold level in erased stateNEC CORP·Filed 1991·Granted Mar 1, 1994·15 cites·9 claims
- 2250US5686746ASemiconductor memory device and a method of making the sameNIPPON STEEL CORP·Filed 1995·Granted Nov 11, 1997·11 cites·7 claims
- 2349US5089866ATwo-transistor type non-volatile semiconductor memoryNEC CORP·Filed 1990·Granted Feb 18, 1992·13 cites·7 claims
- 2447US6060350ASemiconductor memory device having word line conductors provided at lower level than memory cell capacitor and method of manufacturing sameNIPPON STEEL CORP·Filed 1999·Granted May 9, 2000·7 cites·8 claims
- 2547US6051466AMethod of making a semiconductor device with a stacked cell structureNIPPON STEEL CORP·Filed 1997·Granted Apr 18, 2000·9 cites·4 claims
- 2647US5747845ASemiconductor memory device with memory cells each having transistor and capacitor and method of making the sameNIPPON STEEL CORP·Filed 1996·Granted May 5, 1998·9 cites·36 claims
- 2747US5278787ASemiconductor device and method of manufacturing the sameNIPPON STEEL CORP·Filed 1992·Granted Jan 11, 1994·11 cites·13 claims
- 2846US5396120ASemiconductor integrated unitNIPPON STEEL CORP·Filed 1993·Granted Mar 7, 1995·9 cites·20 claims
- 2946US2005242377A1Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 3042US5530276ANonvolatile semiconductor memory deviceNIPPON STEEL CORP·Filed 1994·Granted Jun 25, 1996·8 cites·4 claims
- 3137US5027175AIntegrated circuit semiconductor device having improved wiring structureNEC CORP·Filed 1989·Granted Jun 25, 1991·7 cites·15 claims
- 3235US5329483AMOS semiconductor memory deviceNIPPON STEEL CORP·Filed 1992·Granted Jul 12, 1994·4 cites·4 claims
- 3332US6313509B1Semiconductor device and a MOS transistor for circuit protectionNIPPON STEEL CORP·Filed 1998·Granted Nov 6, 2001·2 cites·23 claims
- 3431US5663103AMethod of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistorNIPPON STEEL CORP·Filed 1996·Granted Sep 2, 1997·2 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →