Inventor · disambiguated record
Chaochieh Tsai
Also filed as: TSAI CHAOCHIEH
26 granted patents·1,344 citations·filing 1996–2017
97Inventor score
Top patents by PatentIndex Score
26 records- 0196US9748206B1Three-dimensional stacking structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·41 cites·12 claims
- 0295US6636139B2Structure to reduce the degradation of the Q value of an inductor caused by via resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 21, 2003·107 cites·22 claims
- 0395US5757045ACMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 26, 1998·210 cites·7 claims
- 0492US10777534B2Three-dimensional stacking structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 15, 2020·8 cites·20 claims
- 0590US6232164B1Process of making CMOS device structure having an anti-SCE block implantTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 15, 2001·124 cites·21 claims
- 0690US5691212AMOS device structure and integration methodTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Nov 25, 1997·123 cites·15 claims
- 0788US6943063B2RF seal ring structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 13, 2005·42 cites·14 claims
- 0888US6444517B1High Q inductor with Cu damascene via/trench etching simultaneous moduleTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 3, 2002·58 cites·31 claims
- 0988US5668024ACMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation processTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·102 cites·34 claims
- 1087US6037204ASilicon and arsenic double implanted pre-amorphization process for salicide technologyTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·94 cites·26 claims
- 1185US6030863AGermanium and arsenic double implanted pre-amorphization process for salicide technologyTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 29, 2000·77 cites·24 claims
- 1284US5674775AIsolation trench with a rounded top edge using an etch buffer layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 7, 1997·79 cites·14 claims
- 1383US5702972AMethod of fabricating MOSFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 30, 1997·59 cites·20 claims
- 1482US6465294B1Self-aligned process for a stacked gate RF MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 15, 2002·31 cites·17 claims
- 1579US6245639B1Method to reduce a reverse narrow channel effect for MOSFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 12, 2001·47 cites·14 claims
- 1669US10157885B2Package structure having magnetic bonding between substratesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·2 cites·20 claims
- 1769US6121139ATi-rich TiN insertion layer for suppression of bridging during a salicide procedureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 19, 2000·28 cites·20 claims
- 1868US6022775AHigh effective area capacitor for high density DRAM circuits using silicide agglomerationTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 8, 2000·28 cites·20 claims
- 1966US6465367B1Lossless co-planar wave guide in CMOS processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 15, 2002·11 cites·28 claims
- 2065US6737310B2Self-aligned process for a stacked gate RF MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 18, 2004·11 cites·14 claims
- 2154US5821153AMethod to reduce field oxide loss from etchesTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 13, 1998·20 cites·16 claims
- 2252US6171913B1Process for manufacturing a single asymmetric pocket implantTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 9, 2001·17 cites·16 claims
- 2351US6495446B1Lossless microstrip line in CMOS processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 17, 2002·3 cites·13 claims
- 2447US6664635B2Lossless microstrip line in CMOS processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 16, 2003·2 cites·11 claims
- 2544US6175125B1Semiconductor structure for testing vias interconnecting layers of the structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·11 cites·12 claims
- 2640US5895257ALOCOS field oxide and field oxide process using silicon nitride spacersTAIWAN SEMICONDUCTOR MANFACTUR·Filed 1996·Granted Apr 20, 1999·9 cites·18 claims
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