Inventor · disambiguated record
Eiji Kamiyama
Also filed as: KAMIYAMA EIJI
11 granted patents·2 pending applications·100 citations·filing 1995–2011
89Inventor score
Files withSUMCO CORP5KAMIYAMA EIJI3SUMITOMO MITSUBISHI SILICON3JEAGUN PARK1MITSUBISHI MATERIALS CORP1
Top patents by PatentIndex Score
13 records- 0184US7947572B2Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulatorSUMITOMO MITSUBISHI SILICON·Filed 2010·Granted May 24, 2011·7 cites·9 claims
- 0281US8379196B2Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering methodSUMCO CORP·Filed 2010·Granted Feb 19, 2013·4 cites·2 claims
- 0381US7491342B2Bonded semiconductor substrate manufacturing method thereofSUMCO CORP·Filed 2004·Granted Feb 17, 2009·33 cites·6 claims
- 0471US8284395B2Wafer surface measuring apparatusKAMIYAMA EIJI·Filed 2010·Granted Oct 9, 2012·3 cites·10 claims
- 0571US7655315B2SOI substrate, silicon substrate therefor and it's manufacturing methodSUMCO CORP·Filed 2006·Granted Feb 2, 2010·5 cites·3 claims
- 0670US5597744AMethod of producing a silicon carbide semiconductor deviceMITSUBISHI MATERIALS CORP·Filed 1995·Granted Jan 28, 1997·41 cites·3 claims
- 0767US7741193B2SOI structure having a SiGe layer interposed between the silicon and the insulatorSUMITOMO MITSUBISHI SILICON·Filed 2005·Granted Jun 22, 2010·3 cites·7 claims
- 0860US8339593B2System and method of two-stepped laser scattering defect inspectionKAMIYAMA EIJI·Filed 2009·Granted Dec 25, 2012·1 cites·6 claims
- 0957US7180138B2SOI structure having a SiGe layer interposed between the silicon and the insulatorJEAGUN PARK·Filed 2005·Granted Feb 20, 2007·2 cites·13 claims
- 1053US8761488B2Image data processing method and image creating methodKAMIYAMA EIJI·Filed 2011·Granted Jun 24, 2014·1 cites·3 claims
- 1147US2009147250A1Semiconductor wafer surface inspection apparatusSUMCO CORP·Filed 2008·Application pending·0 cites
- 1246US7838387B2Method for manufacturing SOI waferSUMCO CORP·Filed 2008·Granted Nov 23, 2010·0 cites·4 claims
- 1337US2003230778A1SOI structure having a SiGe Layer interposed between the silicon and the insulatorSUMITOMO MITSUBISHI SILICON·Filed 2003·Application pending·0 cites
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