Inventor · disambiguated record
Pankaj B. Shah
Also filed as: SHAH PANKAJ · SHAH PANKAJ B
18 granted patents·2 pending applications·769 citations·filing 1990–2015
95Inventor score
Top patents by PatentIndex Score
20 records- 0195US9893155B2Semiconductor electronic device formed of 2-D van der Waals material whose free charge carrier concentration is determined by adjacent semiconductor's polarizationUS ARMY RES LAB·Filed 2015·Granted Feb 13, 2018·14 cites·22 claims
- 0294US7555363B2Multi-function robotic deviceNEATO ROBOTICS INC·Filed 2006·Granted Jun 30, 2009·191 cites·28 claims
- 0393US7851274B1Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristorUS ARMY·Filed 2005·Granted Dec 14, 2010·24 cites·28 claims
- 0492US6960526B1Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductorsUS ARMY·Filed 2003·Granted Nov 1, 2005·44 cites·18 claims
- 0591US7304363B1Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor deviceUS ARMY·Filed 2004·Granted Dec 4, 2007·59 cites·24 claims
- 0691US5058162AMethod of distributing computer data filesHEWLETT PACKARD CO·Filed 1990·Granted Oct 15, 1991·251 cites·17 claims
- 0788US8996172B2Distance sensor system and methodSHAH PANKAJ·Filed 2007·Granted Mar 31, 2015·62 cites·25 claims
- 0886US6703642B1Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-stateUS ARMY·Filed 2000·Granted Mar 9, 2004·43 cites·9 claims
- 0981US6734462B1Silicon carbide power devices having increased voltage blocking capabilitiesUS ARMY·Filed 2002·Granted May 11, 2004·28 cites·20 claims
- 1079US8796082B1Method of optimizing a GA—nitride device material structure for a frequency multiplication deviceUS ARMY RES LAB ATTN RDRL LOC I·Filed 2013·Granted Aug 5, 2014·5 cites·9 claims
- 1171US6900477B1Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufactureUS ARMY·Filed 2002·Granted May 31, 2005·14 cites·6 claims
- 1263US6501099B2Modified-anode gate turn-off thyristorUS ARMY·Filed 2001·Granted Dec 31, 2002·11 cites·7 claims
- 1359US9166068B2Semiconductor heterobarrier electron device and method of makingSHAH PANKAJ B·Filed 2012·Granted Oct 20, 2015·1 cites·18 claims
- 1457US6472686B1Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power controlUS ARMY·Filed 2000·Granted Oct 29, 2002·8 cites·11 claims
- 1552US9960249B2Semiconductor heterobarrier electron device and method of makingU S ARMY RES LABORATORY ATTN RDRL LOC I·Filed 2015·Granted May 1, 2018·0 cites·20 claims
- 1650US9117937B2Group III nitride semiconductor frequency multiplierUS ARMY RES LAB·Filed 2014·Granted Aug 25, 2015·0 cites·17 claims
- 1747US2009306822A1Multi-function robotic deviceNEATO ROBOTICS INC·Filed 2009·Application pending·0 cites
- 1846US8314016B2Low-defect density gallium nitride semiconductor structures and fabrication methodsZHELEVA TSVETANKA S·Filed 2009·Granted Nov 20, 2012·0 cites·5 claims
- 1942US6128324AHigh speed, spatially switching lightUS ARMY·Filed 1998·Granted Oct 3, 2000·14 cites·61 claims
- 2028US2009233414A1Method for fabricating group III-nitride high electron mobility transistors (HEMTs)SHAH PANKAJ B·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Pankaj B. Shah files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →