Inventor · disambiguated record
Knut Stahrenberg
Also filed as: STAHRENBERG KNUT
11 granted patents·3 pending applications·27 citations·filing 2004–2017
85Inventor score
Files withINFINEON TECHNOLOGIES AG7STAHRENBERG KNUT5INFINEON TECHNOLOGIES AUSTRIA AG1SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
14 records- 0190US8252649B2Methods of fabricating semiconductor devices and structures thereofSTAHRENBERG KNUT·Filed 2008·Granted Aug 28, 2012·16 cites·5 claims
- 0284US10566426B2Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 18, 2020·4 cites·27 claims
- 0375US9142547B2Methods of manufacturing resistors and structures thereofSTAHRENBERG KNUT·Filed 2011·Granted Sep 22, 2015·4 cites·24 claims
- 0468US7951664B2Methods of manufacturing resistors and structures thereofINFINEON TECHNOLOGIES AG·Filed 2009·Granted May 31, 2011·3 cites·17 claims
- 0556US9087919B2Methods of fabricating semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 21, 2015·0 cites·8 claims
- 0655US9659778B2Methods of fabricating semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 23, 2017·0 cites·26 claims
- 0754US8778765B2Methods of fabricating semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 15, 2014·0 cites·18 claims
- 0851US8432014B2Methods of fabricating semiconductor devices and structures thereofSTAHRENBERG KNUT·Filed 2012·Granted Apr 30, 2013·0 cites·17 claims
- 0942US9899470B2Method for forming a power semiconductor device and a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 20, 2018·0 cites·20 claims
- 1041US2010148262A1Resistors and Methods of Manufacture ThereofSTAHRENBERG KNUT·Filed 2008·Application pending·0 cites
- 1140US2010308418A1Semiconductor Devices and Methods of Manufacture ThereofSTAHRENBERG KNUT·Filed 2009·Application pending·0 cites
- 1237US9136187B2Method of adjusting a threshold voltage of a transistor in the forming of a semiconductor device including the transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 15, 2015·0 cites·20 claims
- 1334US7091083B2Method for producing a capacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 15, 2006·0 cites·25 claims
- 1429US2016211250A1Semiconductor substrate arrangement, a semiconductor device, and a method for processing a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →