Inventor · disambiguated record
Ko-Min Chang
Also filed as: CHANG KO-MIN
42 granted patents·2 pending applications·1,879 citations·filing 1990–2017
98Inventor score
Top patents by PatentIndex Score
44 records- 0199US5705415AProcess for forming an electrically programmable read-only memory cellMOTOROLA INC·Filed 1994·Granted Jan 6, 1998·290 cites·23 claims
- 0297US5969383ASplit-gate memory device and method for accessing the sameMOTOROLA INC·Filed 1997·Granted Oct 19, 1999·485 cites·12 claims
- 0397US5467308ACross-point eeprom memory arrayMOTOROLA INC·Filed 1994·Granted Nov 14, 1995·148 cites·9 claims
- 0496US7524719B2Method of making self-aligned split gate memory cellFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 28, 2009·38 cites·16 claims
- 0593US7811886B2Split-gate thin film storage NVM cell with reduced load-up/trap-up effectsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·33 cites·18 claims
- 0692US6791883B2Program and erase in a thin film storage non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·66 cites·38 claims
- 0790US6939767B2Multi-bit non-volatile integrated circuit memory and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 6, 2005·56 cites·21 claims
- 0890US5471422AEEPROM cell with isolation transistor and methods for making and operating the sameMOTOROLA INC·Filed 1994·Granted Nov 28, 1995·68 cites·21 claims
- 0989US5949706AStatic random access memory cell having a thin film transistor (TFT) pass gate connection to a bit lineMOTOROLA INC·Filed 1999·Granted Sep 7, 1999·68 cites·21 claims
- 1088US7521317B2Method of forming a semiconductor device and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 21, 2009·16 cites·20 claims
- 1188US5474947ANonvolatile memory processMOTOROLA INC·Filed 1993·Granted Dec 12, 1995·70 cites·8 claims
- 1287US8173505B2Method of making a split gate memory cellHERRICK MATTHEW T·Filed 2008·Granted May 8, 2012·21 cites·10 claims
- 1385US5258949ANonvolatile memory with enhanced carrier generation and method for programming the sameMOTOROLA INC·Filed 1990·Granted Nov 2, 1993·63 cites·14 claims
- 1483US7341914B2Method for forming a non-volatile memory and a peripheral device on a semiconductor substrateFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 11, 2008·8 cites·20 claims
- 1582US7700439B2Silicided nonvolatile memory and method of making sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·10 cites·11 claims
- 1681US9620604B2Structures for split gate memory cell scaling with merged control gatesFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Apr 11, 2017·3 cites·20 claims
- 1781US5357476AApparatus and method for erasing a flash EEPROMMOTOROLA INC·Filed 1993·Granted Oct 18, 1994·52 cites·11 claims
- 1881US5273923AProcess for fabricating an EEPROM cell having a tunnel opening which overlaps field isolation regionsMOTOROLA INC·Filed 1991·Granted Dec 28, 1993·50 cites·15 claims
- 1980US8779405B2Field focusing features in a ReRAM cellZHOU FENG·Filed 2012·Granted Jul 15, 2014·4 cites·20 claims
- 2077US9114980B2Field focusing features in a ReRAM cellZHOU FENG·Filed 2012·Granted Aug 25, 2015·3 cites·13 claims
- 2177US5731238AIntegrated circuit having a jet vapor deposition silicon nitride film and method of making the sameMOTOROLA INC·Filed 1996·Granted Mar 24, 1998·52 cites·22 claims
- 2276US9136360B1Methods and structures for charge storage isolation in split-gate memory arraysPERERA ASANGA H·Filed 2014·Granted Sep 15, 2015·4 cites·18 claims
- 2376US8921155B2Resistive random access memory (RAM) cell and method for formingZHOU FENG·Filed 2011·Granted Dec 30, 2014·3 cites·7 claims
- 2476US5646060AMethod for making an EEPROM cell with isolation transistorMOTOROLA INC·Filed 1995·Granted Jul 8, 1997·32 cites·17 claims
- 2575US9118008B2Field focusing features in a ReRAM cellZHOU FENG·Filed 2014·Granted Aug 25, 2015·2 cites·18 claims
- 2674US5898619AMemory cell having a plural transistor transmission gate and method of formationFiled 1994·Granted Apr 27, 1999·30 cites·38 claims
- 2774US5605855AProcess for fabricating a graded-channel MOS deviceMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·50 cites·9 claims
- 2874US5103425AZener regulated programming circuit for a nonvolatile memoryMOTOROLA INC·Filed 1991·Granted Apr 7, 1992·39 cites·8 claims
- 2972US6844588B2Non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2001·Granted Jan 18, 2005·21 cites·8 claims
- 3070US5706228AMethod for operating a memory arrayMOTOROLA INC·Filed 1996·Granted Jan 6, 1998·30 cites·12 claims
- 3169US8962385B2ReRAM device structureFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Feb 24, 2015·1 cites·9 claims
- 3269US7582929B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 1, 2009·4 cites·15 claims
- 3365US7619275B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·3 cites·20 claims
- 3463US5422846ANonvolatile memory having overerase protectionMOTOROLA INC·Filed 1994·Granted Jun 6, 1995·22 cites·19 claims
- 3560US5130769ANonvolatile memory cellMOTOROLA INC·Filed 1991·Granted Jul 14, 1992·20 cites·14 claims
- 3656US9425055B2Split gate memory cell with a layer of nanocrystals with improved erase performanceWINSTEAD BRIAN A·Filed 2014·Granted Aug 23, 2016·1 cites·15 claims
- 3755US8860001B2ReRAM device structureHONG CHEONG MIN·Filed 2012·Granted Oct 14, 2014·0 cites·9 claims
- 3854US9318501B2Methods and structures for split gate memory cell scaling with merged control gatesROY ANIRBAN·Filed 2014·Granted Apr 19, 2016·0 cites·11 claims
- 3952US5633186AProcess for fabricating a non-volatile memory cell in a semiconductor deviceMOTOROLA INC·Filed 1995·Granted May 27, 1997·12 cites·9 claims
- 4045US7955877B2Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiationFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jun 7, 2011·1 cites·17 claims
- 4141US8835295B2Split gate memory device with gap spacerSHEN JINMIAO J·Filed 2013·Granted Sep 16, 2014·0 cites·20 claims
- 4240US10095186B2User interface activationNXP BV·Filed 2017·Granted Oct 9, 2018·0 cites·15 claims
- 4335US2013084697A1Split gate memory device with gap spacerSHEN JINMIAO J·Filed 2011·Application pending·0 cites
- 4434US2012261635A1Resistive random access memory (ram) cell and method for formingZHOU FENG·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →