Inventor · disambiguated record
Hideto Tamaso
Also filed as: TAMASO HIDETO
27 granted patents·13 pending applications·90 citations·filing 2007–2023
94Inventor score
Top patents by PatentIndex Score
40 records- 0189US10192960B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 29, 2019·8 cites·16 claims
- 0284US10424642B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Sep 24, 2019·4 cites·8 claims
- 0384USD703162SWafer holder for stepperSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 22, 2014·30 cites·1 claims
- 0484US8623752B2Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2007·Granted Jan 7, 2014·11 cites·10 claims
- 0584US8373176B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 12, 2013·9 cites·14 claims
- 0682US9620358B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 11, 2017·5 cites·8 claims
- 0781US8823017B2Semiconductor device and method of manufacturing the sameTAMASO HIDETO·Filed 2011·Granted Sep 2, 2014·5 cites·12 claims
- 0878US8395163B2Semiconductor deviceTAMASO HIDETO·Filed 2009·Granted Mar 12, 2013·6 cites·13 claims
- 0977US9384981B2Method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jul 5, 2016·2 cites·6 claims
- 1070US8883619B2Method for manufacturing semiconductor deviceTAMASO HIDETO·Filed 2011·Granted Nov 11, 2014·2 cites·10 claims
- 1170US8846531B2Method of manufacturing an ohmic electrode containing titanium, aluminum and silicon on a silicon carbide surfaceTAMASO HIDETO·Filed 2010·Granted Sep 30, 2014·3 cites·10 claims
- 1268US10453952B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 22, 2019·1 cites·4 claims
- 1367US9129804B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 8, 2015·1 cites·14 claims
- 1465US10014376B2Silicon carbide semiconductor device having a trench with side walls and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jul 3, 2018·1 cites·15 claims
- 1564US8674374B2Silicon carbide semiconductor device and method for manufacturing sameTAMASO HIDETO·Filed 2010·Granted Mar 18, 2014·1 cites·10 claims
- 1654US12100739B2Method for producing silicon carbide semiconductor device and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Sep 24, 2024·0 cites·11 claims
- 1754US8916462B2Method for manufacturing semiconductor deviceKITABAYASHI HIROYUKI·Filed 2012·Granted Dec 23, 2014·1 cites·17 claims
- 1854US2019140056A1Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Application pending·0 cites
- 1952US12087821B2Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Sep 10, 2024·0 cites·17 claims
- 2052US2025218972A1Semiconductor substrate and semiconductor epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 2150US8866156B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Oct 21, 2014·0 cites·5 claims
- 2249US8643065B2Semiconductor device and method for manufacturing the sameFUJIKAWA KAZUHIRO·Filed 2009·Granted Feb 4, 2014·0 cites·5 claims
- 2348US8847237B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 30, 2014·0 cites·9 claims
- 2448US2011175111A1Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2546US2015287598A1Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2646US2010035420A1Method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 2745US8729567B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted May 20, 2014·0 cites·6 claims
- 2845US2012007104A1Semiconductor device and method for manufacturing sameWADA KEIJI·Filed 2010·Application pending·0 cites
- 2944US8716129B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted May 6, 2014·0 cites·5 claims
- 3041US8691679B2Semiconductor device and method of manufacturing the sameTAMASO HIDETO·Filed 2011·Granted Apr 8, 2014·0 cites·4 claims
- 3140US10381453B2Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Aug 13, 2019·0 cites·13 claims
- 3239US2013045592A1Method for manufacturing silicon carbide semiconductor device and device for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 3338US8963163B2Semiconductor deviceWADA KEIJI·Filed 2010·Granted Feb 24, 2015·0 cites·6 claims
- 3438US2012175638A1Semiconductor deviceHIYOSHI TORU·Filed 2012·Application pending·0 cites
- 3537US9263347B2Method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 16, 2016·0 cites·12 claims
- 3637US2012068195A1Method for manufacturing silicon carbide substrate and silicon carbide substrateHARADA SHIN·Filed 2010·Application pending·0 cites
- 3737US2012003811A1Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 3837US2012032191A1Method for manufacturing silicon carbide substrate and silicon carbide substrateHARADA SHIN·Filed 2010·Application pending·0 cites
- 3933US2012119225A1Silicon carbide substrate, epitaxial layer provided substrate, semiconductor device, and method for manufacturing silicon carbide substrateSHIOMI HIROMU·Filed 2011·Application pending·0 cites
- 4033US2012211770A1Semiconductor device, combined substrate, and methods for manufacturing themSHIOMI HIROMU·Filed 2011·Application pending·0 cites
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