Inventor · disambiguated record
Ronald Kakoschke
Also filed as: KAKOSCHKE RONALD
51 granted patents·4 pending applications·717 citations·filing 1989–2015
98Inventor score
Top patents by PatentIndex Score
55 records- 0198US7786464B2Integrated circuit having dielectric layer including nanocrystalsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 31, 2010·103 cites·23 claims
- 0296US7460385B2Memory circuit arrangement with a cell array substrate and a logic circuit substrate and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 2, 2008·96 cites·16 claims
- 0396US7190022B2One transistor flash memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 13, 2007·29 cites·20 claims
- 0496US6686242B2Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 3, 2004·112 cites·13 claims
- 0591US8004869B2Memory circuit arrangement and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2010·Granted Aug 23, 2011·11 cites·5 claims
- 0691US7723786B2Apparatus of memory array using FinFETsKAKOSCHKE RONALD·Filed 2007·Granted May 25, 2010·16 cites·20 claims
- 0789US6909139B2One transistor flash memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 21, 2005·32 cites·30 claims
- 0885US7291881B2Bit line structure and method of fabricationINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 6, 2007·10 cites·28 claims
- 0985US7262456B2Bit line structure and production method thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 28, 2007·10 cites·19 claims
- 1085US4981815AMethod for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectorsSIEMENS AG·Filed 1989·Granted Jan 1, 1991·71 cites·10 claims
- 1184US8629500B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorHOLZ JUERGEN·Filed 2005·Granted Jan 14, 2014·12 cites·23 claims
- 1284US8258028B2Deep trench isolation structures and methods of formation thereofTILKE ARMIN·Filed 2010·Granted Sep 4, 2012·9 cites·19 claims
- 1382US7679130B2Deep trench isolation structures and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 16, 2010·11 cites·25 claims
- 1481US8039904B2Apparatus of memory array using finfetsINFINEON TECHNOLOGIES AG·Filed 2010·Granted Oct 18, 2011·4 cites·15 claims
- 1580US7943973B2Method for producing a field-effect transistor, field-effect transistor and integrated circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 17, 2011·6 cites·31 claims
- 1679US9012995B2Semiconductor device including FinFET deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·3 cites·28 claims
- 1779US7982488B2Phase-change memory security deviceINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jul 19, 2011·11 cites·20 claims
- 1879US7834403B2Bipolar transistor FINFET technologyINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 16, 2010·6 cites·28 claims
- 1977US5399523AMethod for the rapid thermal processing of a semiconductor wafer by irradiationSIEMENS AG·Filed 1994·Granted Mar 21, 1995·61 cites·1 claims
- 2076US7679963B2Integrated circuit having a drive circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 16, 2010·6 cites·30 claims
- 2175US7687842B2Bit line structure and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 30, 2010·4 cites·2 claims
- 2274US8183120B2Method of making bipolar FinFET technologyKAKOSCHKE RONALD·Filed 2010·Granted May 22, 2012·3 cites·10 claims
- 2373US8946037B2Methods for producing a tunnel field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 3, 2015·2 cites·17 claims
- 2473US8067808B2Apparatus of memory array using FinFETsKAKOSCHKE RONALD·Filed 2010·Granted Nov 29, 2011·2 cites·16 claims
- 2572US6888753B2Memory cell array comprising individually addressable memory cells and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 3, 2005·16 cites·11 claims
- 2670US8199560B2Memory device comprising select gate including carbon allotropeKAKOSCHKE RONALD·Filed 2011·Granted Jun 12, 2012·2 cites·13 claims
- 2770US7764530B2Memory circuit arrangement and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 27, 2010·3 cites·15 claims
- 2869US9219063B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 22, 2015·2 cites·20 claims
- 2965US7989294B2Vertical field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2010·Granted Aug 2, 2011·1 cites·17 claims
- 3064US8105874B2Memory circuit arrangement and method for the production thereofGRUBER WOLFGANG·Filed 2008·Granted Jan 31, 2012·2 cites·8 claims
- 3163US7786530B2Vertical field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 31, 2010·7 cites·17 claims
- 3262US7880264B2Integrated circuit arrangement comprising isolating trenches and a field effect transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 1, 2011·2 cites·7 claims
- 3358US8288813B2Integrated memory device having columns having multiple bit linesKAKOSCHKE RONALD·Filed 2004·Granted Oct 16, 2012·7 cites·12 claims
- 3455US9390975B2Methods for producing a tunnel field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 12, 2016·0 cites·11 claims
- 3555US5981342AMethod of making a semiconductor component with compensation implantationSIEMENS AG·Filed 1997·Granted Nov 9, 1999·13 cites·9 claims
- 3653US7582546B2Device with damaged breakdown layerINFINEON TECHNOLOGIES AG·Filed 2007·Granted Sep 1, 2009·2 cites·44 claims
- 3752US8552475B2Apparatus of memory array using FinFETsKAKOSCHKE RONALD·Filed 2011·Granted Oct 8, 2013·0 cites·16 claims
- 3852US7978504B2Floating gate device with graphite floating gateINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 12, 2011·0 cites·10 claims
- 3951US8518776B2Methods for producing a tunnel field-effect transistorKAKOSCHKE RONALD·Filed 2011·Granted Aug 27, 2013·0 cites·19 claims
- 4050US2008239863A1Memory circuit arrangement and method for the production thereofGRUBER WOLFGANG·Filed 2008·Application pending·0 cites
- 4148US6376875B1Semiconductor component with compensation implantationSIEMENS AG·Filed 1999·Granted Apr 23, 2002·9 cites·10 claims
- 4247US8518759B2Method for producing an integrated field-effect transistorKAKOSCHKE RONALD·Filed 2010·Granted Aug 27, 2013·0 cites·5 claims
- 4347US6177702B1Semiconductor component with a split floating gate and tunnel regionINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jan 23, 2001·10 cites·7 claims
- 4447US2010182147A1Remote storage of data in phase-change memoryINFINEON TECHNOLOGIES AG·Filed 2009·Application pending·0 cites
- 4546US7176088B2Bitline structure and method for production thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 13, 2007·2 cites·57 claims
- 4645US8728907B2Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistorKAKOSCHKE RONALD·Filed 2010·Granted May 20, 2014·0 cites·5 claims
- 4745US8389357B2Method of fabricating a memory device having a memory array including a plurality of memory cell transistors arranged in rows and columnsKAKOSCHKE RONALD·Filed 2011·Granted Mar 5, 2013·0 cites·9 claims
- 4845US2007075434A1Method for producing a PCM memory element and corresponding PCM memory elementKAKOSCHKE RONALD·Filed 2006·Application pending·0 cites
- 4943US8193059B2Bit line structure and method for the production thereofKAKOSCHKE RONALD·Filed 2010·Granted Jun 5, 2012·0 cites·12 claims
- 5043US6218699B1Semiconductor component with adjustable current amplification based on a tunnel-current-controlled avalanche breakdownINFINEON TECHNOLOGIES AG·Filed 1998·Granted Apr 17, 2001·8 cites·9 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →