Inventor · disambiguated record
Kazumasa Hiramatsu
Also filed as: HIRAMATSU KAZUMASA
15 granted patents·1 pending application·1,441 citations·filing 1988–2006
95Inventor score
Top patents by PatentIndex Score
16 records- 0196US5770887AGaN single crystalMITSUBISHI CABLE IND LTD·Filed 1994·Granted Jun 23, 1998·204 cites·8 claims
- 0295US5122845ASubstrate for growing gallium nitride compound-semiconductor device and light emitting diodeTOYODA GOSEI KK·Filed 1990·Granted Jun 16, 1992·217 cites·10 claims
- 0395US4911102AProcess of vapor growth of gallium nitride and its apparatusTOYODA GOSEI KK·Filed 1988·Granted Mar 27, 1990·361 cites·6 claims
- 0494US6503610B2Group III-V compound semiconductor and method of producing the sameSUMITOMO CHEMICAL CO·Filed 2001·Granted Jan 7, 2003·105 cites·7 claims
- 0593US6225650B1GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereofMITSUBISHI CABLE IND LTD·Filed 1998·Granted May 1, 2001·193 cites·12 claims
- 0691US5370738ACompound semiconductor vapor phase epitaxial devicePIONEER ELECTRONIC CORP·Filed 1993·Granted Dec 6, 1994·72 cites·12 claims
- 0790US8053811B2Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor elementSUMITOMO CHEMICAL CO·Filed 2006·Granted Nov 8, 2011·19 cites·10 claims
- 0889US5810925AGaN single crystalMITSUBISHI CABLE IND LTD·Filed 1996·Granted Sep 22, 1998·56 cites·11 claims
- 0985US5846844AMethod for producing group III nitride compound semiconductor substrates using ZnO release layersTOYODA GOSEI KK·Filed 1996·Granted Dec 8, 1998·81 cites·4 claims
- 1083US5218216AGallium nitride group semiconductor and light emitting diode comprising it and the process of producing the sameTOYODA GOSEI KK·Filed 1991·Granted Jun 8, 1993·78 cites·7 claims
- 1169US6756246B2Method for fabricating III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 2002·Granted Jun 29, 2004·14 cites·3 claims
- 1265US7399687B2Substrate of gallium nitride single crystal and process for producing the sameSUMITOMO CHEMICAL CO·Filed 2004·Granted Jul 15, 2008·11 cites·2 claims
- 1359US6946308B2Method of manufacturing III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 2003·Granted Sep 20, 2005·7 cites·7 claims
- 1457US6844574B1III-V compound semiconductorSUMITOMO CHEMICAL CO·Filed 2000·Granted Jan 18, 2005·6 cites·10 claims
- 1551US6734515B1Semiconductor light receiving elementMITSUBISHI CABLE IND LTD·Filed 1999·Granted May 11, 2004·17 cites·6 claims
- 1632US2004157358A1Group III nitride semiconductor film and its production methodFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →