Inventor · disambiguated record
Isamu Akasaki
Also filed as: AKASAKI ISAMU
67 granted patents·13 pending applications·2,914 citations·filing 1974–2025
99Inventor score
Files withTOYODA GOSEI KK25UNIV MEIJO15MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7LUMILEDS LIGHTING LLC4AGILENT TECHNOLOGIES INC3
Top patents by PatentIndex Score
80 records- 0199US5247533AGallium nitride group compound semiconductor laser diodeTOYODA GOSEI KK·Filed 1991·Granted Sep 21, 1993·290 cites·7 claims
- 0296US5389571AMethod of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layerAMANO HIROSHI·Filed 1993·Granted Feb 14, 1995·260 cites·2 claims
- 0395US9437775B2Nitride semiconductor light-emitting deviceUNIV MEIJO·Filed 2014·Granted Sep 6, 2016·20 cites·8 claims
- 0495US5122845ASubstrate for growing gallium nitride compound-semiconductor device and light emitting diodeTOYODA GOSEI KK·Filed 1990·Granted Jun 16, 1992·217 cites·10 claims
- 0594US6569704B1Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiencyLUMILEDS LIGHTING LLC·Filed 2000·Granted May 27, 2003·41 cites·9 claims
- 0694US5239188AGallium nitride base semiconductor deviceAMANO HIROSHI·Filed 1992·Granted Aug 24, 1993·163 cites·2 claims
- 0794US4855249AProcess for growing III-V compound semiconductors on sapphire using a buffer layerUNIV NAGOYA·Filed 1988·Granted Aug 8, 1989·151 cites·9 claims
- 0893US4476620AMethod of making a gallium nitride light-emitting diodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1983·Granted Oct 16, 1984·69 cites·15 claims
- 0993US4396929AGallium nitride light-emitting element and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1980·Granted Aug 2, 1983·101 cites·18 claims
- 1091US6849472B2Nitride semiconductor device with reduced polarization fieldsLUMILEDS LIGHTING LLC·Filed 2001·Granted Feb 1, 2005·52 cites·20 claims
- 1191US5862167ALight-emitting semiconductor device using gallium nitride compoundTOYODA GOSEI KK·Filed 1997·Granted Jan 19, 1999·177 cites·5 claims
- 1291US5620557ASapphireless group III nitride semiconductor and method for making sameTOYODA GOSEI KK·Filed 1995·Granted Apr 15, 1997·139 cites·12 claims
- 1391US5370738ACompound semiconductor vapor phase epitaxial devicePIONEER ELECTRONIC CORP·Filed 1993·Granted Dec 6, 1994·72 cites·12 claims
- 1491US5281830ALight-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1991·Granted Jan 25, 1994·121 cites·6 claims
- 1590US10116120B2Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the elementUNIV MEIJO·Filed 2017·Granted Oct 30, 2018·5 cites·14 claims
- 1689US5278433ALight-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layerTOYODA GOSEI KK·Filed 1992·Granted Jan 11, 1994·86 cites·19 claims
- 1788US6229151B1Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiencyAGILENT TECHNOLOGIES INC·Filed 1998·Granted May 8, 2001·56 cites·6 claims
- 1886US6362017B1Light-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 2000·Granted Mar 26, 2002·44 cites·24 claims
- 1985US7361948B2Filter function-equipped optical sensor and flame sensorUV CRAFTORY CO LTD·Filed 2004·Granted Apr 22, 2008·37 cites·16 claims
- 2085US5846844AMethod for producing group III nitride compound semiconductor substrates using ZnO release layersTOYODA GOSEI KK·Filed 1996·Granted Dec 8, 1998·81 cites·4 claims
- 2185US5733796ALight-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1995·Granted Mar 31, 1998·77 cites·2 claims
- 2283US9716209B2Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting deviceUNIV MEIJO·Filed 2016·Granted Jul 25, 2017·5 cites·5 claims
- 2383US5218216AGallium nitride group semiconductor and light emitting diode comprising it and the process of producing the sameTOYODA GOSEI KK·Filed 1991·Granted Jun 8, 1993·78 cites·7 claims
- 2482US7183578B2Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatusKYOCERA CORP·Filed 2006·Granted Feb 27, 2007·7 cites·9 claims
- 2581US4473938AMethod for making a GaN electroluminescent semiconductor device utilizing epitaxial depositionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1983·Granted Oct 2, 1984·42 cites·4 claims
- 2680US5604763AGroup III nitride compound semiconductor laser diode and method for producing sameTOYODA GOSEI KK·Filed 1995·Granted Feb 18, 1997·49 cites·8 claims
- 2780US5583879AGallum nitride group compound semiconductor laser diodeTOYODA GOSEI KK·Filed 1995·Granted Dec 10, 1996·48 cites·7 claims
- 2879US7855385B2SiC crystal and semiconductor deviceUNIV MEIJO·Filed 2008·Granted Dec 21, 2010·4 cites·9 claims
- 2979US6537513B1Semiconductor substrate and method for making the sameLUMILEDS LIGHTING LLC·Filed 2000·Granted Mar 25, 2003·23 cites·9 claims
- 3078US8941136B2Semiconductor light emitting elementKAMIYAMA SATOSHI·Filed 2010·Granted Jan 27, 2015·3 cites·16 claims
- 3178US6829273B2Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of sameAGILENT TECHNOLOGIES INC·Filed 2001·Granted Dec 7, 2004·14 cites·19 claims
- 3277US6534791B1Epitaxial aluminium-gallium nitride semiconductor substrateLUMILEDS LIGHTING LLC·Filed 1999·Granted Mar 18, 2003·46 cites·7 claims
- 3375US7985964B2Light-emitting semiconductor deviceUNIV MEIJO·Filed 2008·Granted Jul 26, 2011·5 cites·1 claims
- 3475US7612381B2Method for fabricating a semiconductor device and semiconductor deviceUNIV MEIJO·Filed 2007·Granted Nov 3, 2009·6 cites·1 claims
- 3575US5889806AGroup III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Mar 30, 1999·39 cites·7 claims
- 3675US5834326AProcess for producing a luminous element of group III nitride semi-conductorPIONEER ELECTRONIC CORP·Filed 1996·Granted Nov 10, 1998·59 cites·13 claims
- 3775US4408217AGaN Electroluminescent semiconductor device and method for making the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1980·Granted Oct 4, 1983·33 cites·5 claims
- 3874US2025151463A1Semiconductor light-emitting device including a plurality of columnar semiconductorsTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 3972US7732826B2Semiconductor and method of semiconductor fabricationKAMIYAMA SATOSHI·Filed 2006·Granted Jun 8, 2010·5 cites·8 claims
- 4070US7297989B2Diboride single crystal substrate, semiconductor device using this and its manufacturing methodNAT INST FOR MATERIALS SCIENCE·Filed 2003·Granted Nov 20, 2007·13 cites·19 claims
- 4166US3984263AMethod of producing defectless epitaxial layer of galliumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1974·Granted Oct 5, 1976·16 cites·8 claims
- 4265US5496766AMethod for producing a luminous element of III-group nitridePIONEER ELECTRONIC CORP·Filed 1995·Granted Mar 5, 1996·35 cites·4 claims
- 4363US12439735B2Semiconductor device and method for producing semiconductor deviceTOYODA GOSEI KK·Filed 2022·Granted Oct 7, 2025·0 cites·8 claims
- 4463US6690700B2Nitride semiconductor deviceAGILENT TECHNOLOGIES INC·Filed 2001·Granted Feb 10, 2004·11 cites·20 claims
- 4562US10593831B2Nitride semiconductor multilayer film reflector and light-emitting device using the sameUNIV MEIJO·Filed 2014·Granted Mar 17, 2020·1 cites·10 claims
- 4662US5905276ALight emitting semiconductor device using nitrogen-Group III compoundAKASAKI ISAMU·Filed 1997·Granted May 18, 1999·34 cites·11 claims
- 4762US2022285580A1Semiconductor Light-Emitting DeviceTOYTODA GOSEI CO LTD·Filed 2022·Application pending·0 cites
- 4861US6607595B1Method for producing a light-emitting semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Aug 19, 2003·8 cites·100 claims
- 4961US6472690B1Gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·7 cites·37 claims
- 5059US2015091039A1Semiconductor light emitting elementEL SEED CORP·Filed 2014·Application pending·0 cites
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →