Inventor · disambiguated record
Ali A. Iranmanesh
Also filed as: IRANMANESH ALI · IRANMANESH ALI A · IRANMANESH ALI AKBAR
49 granted patents·1,500 citations·filing 1985–2002
99Inventor score
Files withNAT SEMICONDUCTOR CORP29CROSSPOINT SOLUTIONS INC9ADVANCED MICRO DEVICES INC6ARTISAN COMPONENTS INC3SYNOPSYS INC2
Top patents by PatentIndex Score
49 records- 0194US6445049B1Cell based array comprising logic, transfer and drive cellsARTISAN COMPONENTS INC·Filed 1998·Granted Sep 3, 2002·125 cites·12 claims
- 0292US5510629AMultilayer antifuse with intermediate spacer layerCROSSPOINT SOLUTIONS INC·Filed 1994·Granted Apr 23, 1996·150 cites·20 claims
- 0391US5338696AMethod of fabricating BiCMOS deviceNAT SEMICONDUCTOR CORP·Filed 1993·Granted Aug 16, 1994·79 cites·8 claims
- 0490US5144404APolysilicon Schottky clamped transistor and vertical fuse devicesNAT SEMICONDUCTOR CORP·Filed 1990·Granted Sep 1, 1992·92 cites·12 claims
- 0589US5389552ATransistors having bases with different shape top surfacesNAT SEMICONDUCTOR CORP·Filed 1993·Granted Feb 14, 1995·66 cites·6 claims
- 0686US5169794AMethod of fabrication of pnp structure in a common substrate containing npn or MOS structuresNAT SEMICONDUCTOR CORP·Filed 1991·Granted Dec 8, 1992·56 cites·4 claims
- 0780US4621414AMethod of making an isolation slot for integrated circuit structureADVANCED MICRO DEVICES INC·Filed 1985·Granted Nov 11, 1986·54 cites·19 claims
- 0879US5302551AMethod for planarizing the surface of an integrated circuit over a metal interconnect layerNAT SEMICONDUCTOR CORP·Filed 1992·Granted Apr 12, 1994·60 cites·18 claims
- 0978US5387813ATransistors with emitters having at least three sidesNAT SEMICONDUCTOR CORP·Filed 1992·Granted Feb 7, 1995·28 cites·22 claims
- 1076US5236863AIsolation process for VLSINAT SEMICONDUCTOR CORP·Filed 1992·Granted Aug 17, 1993·53 cites·8 claims
- 1172US5440167AAntifuse with double via contact and method of manufacture thereforCROSSPOINT SOLUTIONS INC·Filed 1994·Granted Aug 8, 1995·45 cites·15 claims
- 1272US4745087AMethod of making fully self-aligned bipolar transistor involving a polysilicon collector contact formed in a slot with an oxide sidewallADVANCED MICRO DEVICES INC·Filed 1987·Granted May 17, 1988·39 cites·21 claims
- 1370US5661046AMethod of fabricating BiCMOS deviceNAT SEMICONDUCTOR CORP·Filed 1994·Granted Aug 26, 1997·24 cites·4 claims
- 1469US6177691B1Cell based array having compute drive ratios of N:1SYNOPSYS INC·Filed 1998·Granted Jan 23, 2001·28 cites·21 claims
- 1569US5514900AMutlilayered antifuse with intermediate metal layerCROSSPOINT SOLUTIONS INC·Filed 1994·Granted May 7, 1996·33 cites·16 claims
- 1669US5436496AVertical fuse deviceNAT SEMICONDUCTOR CORP·Filed 1994·Granted Jul 25, 1995·44 cites·34 claims
- 1769US5389553AMethods for fabrication of transistorsNAT SEMICONDUCTOR CORP·Filed 1993·Granted Feb 14, 1995·30 cites·15 claims
- 1867US5059555AMethod to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layerNAT SEMICONDUCTOR CORP·Filed 1990·Granted Oct 22, 1991·27 cites·11 claims
- 1964US5572062AAntifuse with silicon spacersCROSSPOINT SOLUTIONS INC·Filed 1994·Granted Nov 5, 1996·33 cites·14 claims
- 2064US5521440ALow-capacitance, plugged antifuse and method of manufacture thereforCROSSPOINT SOLUTIONS INC·Filed 1994·Granted May 28, 1996·33 cites·24 claims
- 2162US5387552AMethod of fabrication of PNP structure in a common substrate containing NPN or MOS structuresNAT SEMICONDUCTOR CORP·Filed 1992·Granted Feb 7, 1995·18 cites·9 claims
- 2262US4641416AMethod of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitterADVANCED MICRO DEVICES INC·Filed 1985·Granted Feb 10, 1987·29 cites·10 claims
- 2361US4933733ASlot collector transistorADVANCED MICRO DEVICES INC·Filed 1986·Granted Jun 12, 1990·20 cites·7 claims
- 2461US4800171AMethod for making bipolar and CMOS integrated circuit structuresADVANCED MICRO DEVICES INC·Filed 1987·Granted Jan 24, 1989·27 cites·19 claims
- 2560US6432726B2Method and apparatus for reducing process-induced charge buildupARTISAN COMPONENTS INC·Filed 1997·Granted Aug 13, 2002·16 cites·7 claims
- 2660US5508552ATransistors with multiple emitters, and transistors with substantially square base emitter junctionsNAT SEMICONDUCTOR CORP·Filed 1994·Granted Apr 16, 1996·13 cites·15 claims
- 2760US5374566AMethod of fabricating a BiCMOS structureNAT SEMICONDUCTOR CORP·Filed 1993·Granted Dec 20, 1994·19 cites·10 claims
- 2859US5589412AMethod of making increased-density flash EPROM that utilizes a series of planarized, self-aligned, intermediate strips of conductive material to contact the drain regionsNAT SEMICONDUCTOR CORP·Filed 1995·Granted Dec 31, 1996·17 cites·8 claims
- 2958US5212102AMethod of making polysilicon Schottky clamped transistor and vertical fuse devicesNAT SEMICONDUCTOR CORP·Filed 1992·Granted May 18, 1993·19 cites·11 claims
- 3057US5338694AMethod of fabricating BiCMOS deviceNAT SEMICONDUCTOR CORP·Filed 1992·Granted Aug 16, 1994·15 cites·1 claims
- 3155US5675175ABipolar transistorsNAT SEMICONDUCTOR CORP·Filed 1995·Granted Oct 7, 1997·15 cites·15 claims
- 3254US5234847AMethod of fabricating a BiCMOS device having closely spaced contactsNAT SEMICONDUCTOR CORP·Filed 1991·Granted Aug 10, 1993·16 cites·5 claims
- 3354US4829025AProcess for patterning films in manufacture of integrated circuit structuresADVANCED MICRO DEVICES INC·Filed 1987·Granted May 9, 1989·21 cites·14 claims
- 3453US5850101ABipolar transistor with extended emitterNAT SEMICONDUCTOR CORP·Filed 1997·Granted Dec 15, 1998·13 cites·3 claims
- 3553US5663591AAntifuse with double via, spacer-defined contactCROSSPOINT SOLUTIONS INC·Filed 1995·Granted Sep 2, 1997·19 cites·38 claims
- 3653US5587613ALow-capacitance, isotropically etched antifuse and method of manufacture thereforCROSSPOINT SOLUTIONS INC·Filed 1994·Granted Dec 24, 1996·20 cites·7 claims
- 3751US5139961AReducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic baseNAT SEMICONDUCTOR CORP·Filed 1990·Granted Aug 18, 1992·25 cites·13 claims
- 3850US6639286B2Method and apparatus for reducing process-induced charge buildupARTISAN COMPONENTS INC·Filed 2002·Granted Oct 28, 2003·3 cites·6 claims
- 3949US5627098AMethod of forming an antifuse in an integrated circuitCROSSPOINT SOLUTIONS INC·Filed 1996·Granted May 6, 1997·13 cites·14 claims
- 4047US6177709B1Cell based array having compute/drive ratios of N:1SYNOPSYS INC·Filed 1997·Granted Jan 23, 2001·9 cites·5 claims
- 4146US5572063ABipolar transistor with L-shaped emitterNAT SEMICONDUCTOR CORP·Filed 1994·Granted Nov 5, 1996·8 cites·18 claims
- 4240US5682058AMultilayer antifuse with low leakage and method of manufacture thereforCROSSPOINT SOLUTIONS INC·Filed 1994·Granted Oct 28, 1997·10 cites·20 claims
- 4340US5107320AMethod and apparatus for improvement of interconnection capacitanceNAT SEMICONDUCTOR CORP·Filed 1991·Granted Apr 21, 1992·10 cites·15 claims
- 4437US5124775ASemiconductor device with oxide sidewallNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jun 23, 1992·4 cites·5 claims
- 4536US5399509AMethod of manufacturing a bipolar transistorNAT SEMICONDUCTOR CORP·Filed 1993·Granted Mar 21, 1995·4 cites·10 claims
- 4636US5242854AHigh performance semiconductor devices and their manufactureNAT SEMICONDUCTOR CORP·Filed 1992·Granted Sep 7, 1993·8 cites·9 claims
- 4735US5733791AMethods for fabrication of bipolar device having high ratio of emitter to base areaNAT SEMICONDUCTOR CORP·Filed 1996·Granted Mar 31, 1998·3 cites·3 claims
- 4835US5262672AApparatus for improvement of interconnection capacitanceNAT SEMICONDUCTOR CORP·Filed 1991·Granted Nov 16, 1993·5 cites·10 claims
- 4931US5512508AMethod and apparatus for improvement of interconnection capacitanceNAT SEMICONDUCTOR CORP·Filed 1993·Granted Apr 30, 1996·2 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →