Inventor · disambiguated record
Ramy Nashed Bassely Said
Also filed as: SAID RAMY NASHED BASSELY
24 granted patents·3 pending applications·33 citations·filing 2019–2023
92Inventor score
Files withSANDISK TECHNOLOGIES LLC27
Top patents by PatentIndex Score
27 records- 0198US11631686B2Three-dimensional memory array including dual work function floating gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 18, 2023·6 cites·15 claims
- 0298US11171097B2Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 9, 2021·9 cites·18 claims
- 0397US11393780B2Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 19, 2022·6 cites·20 claims
- 0496US11482531B2Three-dimensional memory device including multi-bit charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 25, 2022·4 cites·13 claims
- 0595US12347779B2Three-dimensional memory device with source line isolation and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 1, 2025·4 cites·14 claims
- 0691US11646283B2Bonded assembly containing low dielectric constant bonding dielectric materialSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 9, 2023·2 cites·10 claims
- 0787US12317502B2Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted May 27, 2025·1 cites·1 claims
- 0882US11515250B2Three dimensional semiconductor device containing composite contact via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 29, 2022·1 cites·20 claims
- 0960US12414296B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 9, 2025·0 cites·10 claims
- 1059US2024237344A1Three-dimensional memory device with reduced neighboring word line interference and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1158US11450687B2Multibit ferroelectric memory cells and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 20, 2022·0 cites·24 claims
- 1257US12160989B2Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 3, 2024·0 cites·13 claims
- 1357US12150302B2Memory device including mixed oxide charge trapping materials and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 1455US12456687B2Three-dimensional memory device with source line isolation and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 28, 2025·0 cites·14 claims
- 1555US12101936B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 24, 2024·0 cites·20 claims
- 1655US11430736B2Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 30, 2022·0 cites·21 claims
- 1754US12288586B2Non-volatile memory with sub-planes having individually biasable source linesSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 1854US11387250B2Three-dimensional memory device containing metal-organic framework inter-word line insulating layersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 12, 2022·0 cites·4 claims
- 1953US12185540B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 31, 2024·0 cites·2 claims
- 2053US11968826B2Three-dimensional memory device with metal-barrier-metal word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 23, 2024·0 cites·6 claims
- 2152US11515273B2Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2251US2023018394A1Three-dimensional memory device including airgap containing insulating layers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Application pending·0 cites
- 2350US12267998B2Three-dimensional memory device including discrete charge storage elements and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 1, 2025·0 cites·1 claims
- 2450US11296028B2Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 5, 2022·0 cites·20 claims
- 2549US11968834B2Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 23, 2024·0 cites·19 claims
- 2649US2021320075A1Bonded assembly containing bonding pads spaced apart by polymer material, and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Application pending·0 cites
- 2748US11749736B2Three-dimensional memory device including discrete charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 5, 2023·0 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Ramy Nashed Bassely Said files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →