Inventor · disambiguated record
Chang-Jin Kang
Also filed as: KANG CHANG YONG · KANG CHANG-JIN
40 granted patents·13 pending applications·340 citations·filing 1998–2010
98Inventor score
Top patents by PatentIndex Score
53 records- 0195US7319255B2Semiconductor device including a metal gate electrode formed in a trench and method of forming thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 15, 2008·35 cites·15 claims
- 0293US7531449B2Method of forming fine patterns using double patterning processSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·29 cites·20 claims
- 0390US7564094B2Non-volatile memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 21, 2009·15 cites·8 claims
- 0487US7402488B2Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·13 cites·49 claims
- 0584US7384843B2Method of fabricating flash memory device including control gate extensionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·12 cites·27 claims
- 0681US8530954B2Non-volatile memory devices including first and second blocking layer patternsKIM DONG-HYUN·Filed 2009·Granted Sep 10, 2013·7 cites·13 claims
- 0781US7303957B2Method of fabricating a flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 4, 2007·7 cites·19 claims
- 0879US7763544B2Method of forming fine pattern of semiconductor device using sige layer as sacrificial layer, and method of forming self-aligned contacts using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 27, 2010·5 cites·11 claims
- 0979US6867096B2Method of fabricating semiconductor device having capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 15, 2005·16 cites·18 claims
- 1077US7709389B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 4, 2010·5 cites·16 claims
- 1177US7291531B2Method of fabricating semiconductor device having capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 6, 2007·4 cites·8 claims
- 1275US6177320B1Method for forming a self aligned contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 23, 2001·50 cites·30 claims
- 1372US7381508B2Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 3, 2008·16 cites·13 claims
- 1472US6607954B2Methods of fabricating cylinder-type capacitors for semiconductor devices using a hard mask and a mold layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 19, 2003·20 cites·20 claims
- 1569US7125766B2Method of forming capacitor for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 24, 2006·4 cites·20 claims
- 1667US7803517B2Method of forming fine contact hole and method of fabricating semiconductor device using block copolymersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 28, 2010·2 cites·19 claims
- 1767US7566659B2Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·2 cites·11 claims
- 1867US7098135B2Semiconductor device including bit line formed using damascene technique and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 29, 2006·9 cites·11 claims
- 1966US7183600B2Semiconductor device with trench gate type transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·11 cites·10 claims
- 2061US7338849B2Methods of fabricating flash memory devices and flash memory devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·2 cites·32 claims
- 2161US7226867B2Method of etching a metal layer using a mask, a metallization method for a semiconductor device, a method of etching a metal layer, and an etching gasSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 5, 2007·7 cites·25 claims
- 2260US7709346B2Semiconductor device with trench gate type transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 4, 2010·2 cites·28 claims
- 2360US7618899B2Method of patterning a matrix into a substrate via multiple, line-and-space, sacrificial, hard mask layersSAMSUNG ELECTROIC CO LTD·Filed 2007·Granted Nov 17, 2009·2 cites·28 claims
- 2460US6753221B2Methods for fabricating semiconductor devices having capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 22, 2004·7 cites·25 claims
- 2559US6169009B1Methods of etching platinum group metal film and forming lower electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 2, 2001·25 cites·6 claims
- 2658US7312130B2Methods of forming capacitor structures including L-shaped cavitiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·9 cites·22 claims
- 2757US7001817B2Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·7 cites·20 claims
- 2856US7736970B2Method of fabricating semiconductor device having capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 15, 2010·0 cites·12 claims
- 2955US7118926B2Method of optimizing seasoning recipe for etch processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 10, 2006·4 cites·14 claims
- 3055US7052952B2Method for forming wire line by damascene process using hard mask formed from contactsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·7 cites·23 claims
- 3153US8080886B2Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the sameKANG CHANG-JIN·Filed 2008·Granted Dec 20, 2011·1 cites·9 claims
- 3251US8941165B2Methods of fabricating integrated circuit capacitors having u-shaped lower capacitor electrodesCHO SUNG-IL·Filed 2010·Granted Jan 27, 2015·0 cites·18 claims
- 3350US2006284277A1Semiconductor device including bit line formed using damascene technique and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3446US7491344B2Method for etching an object using a plasma and an object etched by a plasmaSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 17, 2009·1 cites·23 claims
- 3546US7256143B2Semiconductor device having self-aligned contact plug and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 14, 2007·0 cites·8 claims
- 3646US2008199975A1Methods of forming a metal oxide layer pattern having a decreased line width of a portion thereof and methods of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3744US7842450B2Method of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·0 cites·18 claims
- 3844US6875690B2Semiconductor device having self-aligned contact plug and method for fabricating the sameSAMSUNG ELECTRONICS COL LTD·Filed 2003·Granted Apr 5, 2005·1 cites·12 claims
- 3943US2006293781A1Method of optimizing seasoning recipe for etch processCHO HONG·Filed 2006·Application pending·0 cites
- 4043US2008076071A1Method of forming a fine patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4141US7479445B2Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masksSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 20, 2009·0 cites·5 claims
- 4240US2005003310A1Etching process including plasma pretreatment for generating fluorine-free carbon-containing polymer on a photoresist patternSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 4340US2009008701A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4440US2006246666A1Method of fabricating flash memory with u-shape floating gateHAN JEONG-NAM·Filed 2006·Application pending·0 cites
- 4539US2007023916A1Semiconductor structure with multiple bottom anti-reflective coating layer and method of forming photoresist pattern and pattern of semiconductor device using the same structureHAH JUNG-HWAN·Filed 2006·Application pending·0 cites
- 4638US7572736B2Method of dry-etching semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 11, 2009·0 cites·24 claims
- 4738US2007020780A1Method of processing semiconductor substrate responsive to a state of chamber contaminationBAEK KYE-HYUN·Filed 2006·Application pending·0 cites
- 4838US2006024932A1Methods of forming semiconductor devices including removing a thickness of a polysilicon gate layerPARK HEUNG-SIK·Filed 2005·Application pending·0 cites
- 4936US2002045353A1Method for manufacturing semiconductor device using octafluorobutene etching gas and semiconductor device manufactured therebyFiled 2001·Application pending·0 cites
- 5034US2002024103A1Structure of borderless contact and fabricating method thereofFiled 2001·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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