Inventor · disambiguated record
Kang Sup Shin
Also filed as: SHIN KANG S · SHIN KANG SUP
17 granted patents·7 pending applications·28 citations·filing 1998–2025
90Inventor score
Files withSK KEYFOUNDRY INC8MAGNACHIP SEMICONDUCTOR LTD7KEY FOUNDRY CO LTD5HYNIX SEMICONDUCTOR INC2HONG EUN S1
Top patents by PatentIndex Score
24 records- 0194US11615989B2Semiconductor device having deep trench structure and method of manufacturing thereofKEY FOUNDRY CO LTD·Filed 2022·Granted Mar 28, 2023·2 cites·15 claims
- 0290US11018060B2Semiconductor device having deep trench structure and method of manufacturing thereofKEY FOUNDRY CO LTD·Filed 2019·Granted May 25, 2021·5 cites·7 claims
- 0380US10529797B2Semiconductor device having a deep-trench capacitor including void and fabricating method thereofMAGNACHIP SEMICONDUCTOR LTD·Filed 2018·Granted Jan 7, 2020·3 cites·22 claims
- 0479US12183639B2Semiconductor device having deep trench structure and method of manufacturing thereofSK KEYFOUNDRY INC·Filed 2023·Granted Dec 31, 2024·0 cites·16 claims
- 0576US2025364398A1Semiconductor device having high breakdown voltage capacitorSK KEYFOUNDRY INC·Filed 2025·Application pending·0 cites
- 0672US9419206B2Magnetic sensor and method of fabricating the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2013·Granted Aug 16, 2016·2 cites·23 claims
- 0772US2025323142A1Semiconductor device and semiconductor device manufacturing method with high-voltage isolation capacitorSK KEYFOUNDRY INC·Filed 2025·Application pending·0 cites
- 0871US11367661B2Semiconductor device having deep trench structure and method of manufacturing thereofKEY FOUNDRY CO LTD·Filed 2020·Granted Jun 21, 2022·0 cites·17 claims
- 0967US12489050B2Semiconductor device having high breakdown voltage capacitorSK KEYFOUNDRY INC·Filed 2023·Granted Dec 2, 2025·0 cites·17 claims
- 1066US12374614B2Semiconductor device and semiconductor device manufacturing method with high-voltage isolation capacitorSK KEYFOUNDRY INC·Filed 2023·Granted Jul 29, 2025·0 cites·11 claims
- 1166US2025266212A1Semiconductor device having a high breakdown voltage capacitor and method for forming the sameSK KEYFOUNDRY INC·Filed 2025·Application pending·0 cites
- 1260US12327692B2Semiconductor device having a high breakdown voltage capacitor and method for forming the sameSK KEYFOUNDRY INC·Filed 2021·Granted Jun 10, 2025·0 cites·24 claims
- 1358US10700265B2Semiconductor device having circuitry positioned above a buried magnetic sensorMAGNACHIP SEMICONDUCTOR LTD·Filed 2018·Granted Jun 30, 2020·0 cites·11 claims
- 1458US10256396B2Magnetic sensor and method of fabricating the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2016·Granted Apr 9, 2019·0 cites·22 claims
- 1558US2024355631A1Method for manufacturing semiconductor dieSK KEYFOUNDRY INC·Filed 2023·Application pending·0 cites
- 1656US10003013B2Semiconductor device having circuitry positioned above a buried magnetic sensorMAGNACHIP SEMICONDUCTOR LTD·Filed 2014·Granted Jun 19, 2018·0 cites·13 claims
- 1752US6462565B1Measuring pattern for measuring width of wire in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2000·Granted Oct 8, 2002·3 cites·15 claims
- 1852US2024063112A1Semiconductor device having high-voltage isolation capacitorKEY FOUNDRY CO LTD·Filed 2023·Application pending·0 cites
- 1950US2024162282A1Manufacturing method of a semiconductor device having high-voltage isolation capacitorKEY FOUNDRY CO LTD·Filed 2023·Application pending·0 cites
- 2049US9362207B2Metal wiring of semiconductor device and method for manufacturing the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2012·Granted Jun 7, 2016·0 cites·27 claims
- 2149US6127197AMethod for measuring width of wire in semiconductor device using measuring-patternHYUNDAI ELECTRONICS IND·Filed 1998·Granted Oct 3, 2000·13 cites·12 claims
- 2247US9558992B2Metal wiring of semiconductor device and method for manufacturing the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2016·Granted Jan 31, 2017·0 cites·11 claims
- 2340US2006234516A1Composition for cleaning semiconductor device and method for cleaning semiconductor device using the sameHONG EUN S·Filed 2005·Application pending·0 cites
- 2439US7160810B2Method for forming interlayer insulation film in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →