Inventor · disambiguated record
Yasushi Urakami
Also filed as: URAKAMI YASUSHI
35 granted patents·9 pending applications·254 citations·filing 2000–2023
96Inventor score
Files withTOYOTA MOTOR CO LTD20DENSO CORP13TOYOTA CHUO KENKYUSHO KK3URAKAMI YASUSHI3GUNJISHIMA ITARU2
Top patents by PatentIndex Score
44 records- 0196US6495294B1Method for manufacturing semiconductor substrate having an epitaxial film in the trenchDENSO CORP·Filed 2000·Granted Dec 17, 2002·117 cites·38 claims
- 0291US6495883B2Trench gate type semiconductor device and method of manufacturingDENSO CORP·Filed 2002·Granted Dec 17, 2002·62 cites·19 claims
- 0386US12324187B2Switching elementDENSO CORP·Filed 2022·Granted Jun 3, 2025·1 cites·3 claims
- 0485US12100763B2Semiconductor device having cell section with gate structures partly covered with protective filmDENSO CORP·Filed 2021·Granted Sep 24, 2024·1 cites·14 claims
- 0585US9048102B2SiC single crystal, SiC wafer, and semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2012·Granted Jun 2, 2015·2 cites·17 claims
- 0684US6406982B2Method of improving epitaxially-filled trench by smoothing trench prior to fillingDENSO CORP·Filed 2001·Granted Jun 18, 2002·27 cites·22 claims
- 0783US10121862B2Switching device and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Nov 6, 2018·5 cites·15 claims
- 0882US10243035B2Method of manufacturing switching elementTOYOTA MOTOR CO LTD·Filed 2017·Granted Mar 26, 2019·3 cites·4 claims
- 0981US10056374B2Switching deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Aug 21, 2018·3 cites·4 claims
- 1080US7564095B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2006·Granted Jul 21, 2009·9 cites·13 claims
- 1177US10236338B2SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production methodSHOWA DENKO KK·Filed 2016·Granted Mar 19, 2019·1 cites·19 claims
- 1274US10170470B2Switching deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Jan 1, 2019·2 cites·5 claims
- 1373US7838995B2Semiconductor device having p-n column portionDENSO CORP·Filed 2008·Granted Nov 23, 2010·5 cites·6 claims
- 1468US10367091B2Semiconductor switching elementTOYOTA MOTOR CO LTD·Filed 2016·Granted Jul 30, 2019·1 cites·7 claims
- 1567US10125435B2SiC single crystal, SiC wafer, SiC substrate, and SiC deviceTOYOTA CHUO KENKYUSHO KK·Filed 2014·Granted Nov 13, 2018·0 cites·14 claims
- 1667US8936682B2Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defectsURAKAMI YASUSHI·Filed 2011·Granted Jan 20, 2015·3 cites·18 claims
- 1762US9166008B2SiC single crystal, SiC wafer, and semiconductor deviceGUNJISHIMA ITARU·Filed 2012·Granted Oct 20, 2015·2 cites·12 claims
- 1858US7063751B2Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the cornersDENSO CORP·Filed 2002·Granted Jun 20, 2006·5 cites·5 claims
- 1956US2024079492A1Semiconductor deviceDENSO CORP·Filed 2023·Application pending·0 cites
- 2054US6642577B2Semiconductor device including power MOSFET and peripheral device and method for manufacturing the sameDENSO CORP·Filed 2001·Granted Nov 4, 2003·5 cites·11 claims
- 2152US10923395B2Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2019·Granted Feb 16, 2021·0 cites·12 claims
- 2251US9534317B2Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystalTOYOTA CHUO KENKYUSHO KK·Filed 2013·Granted Jan 3, 2017·0 cites·10 claims
- 2348US10263071B2Method of manufacturing semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Apr 16, 2019·0 cites·7 claims
- 2447US10522627B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·7 claims
- 2546US11004765B2Field-effect transistor with a heat absorber in contact with a surface of the gate electrode on its back sideDENSO CORP·Filed 2019·Granted May 11, 2021·0 cites·8 claims
- 2645US9145622B2Manufacturing method of silicon carbide single crystalURAKAMI YASUSHI·Filed 2011·Granted Sep 29, 2015·0 cites·13 claims
- 2743US10840386B2Semiconductor apparatusTOYOTA MOTOR CO LTD·Filed 2017·Granted Nov 17, 2020·0 cites·7 claims
- 2842US10770580B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Sep 8, 2020·0 cites·6 claims
- 2941US11393902B2Semiconductor deviceDENSO CORP·Filed 2018·Granted Jul 19, 2022·0 cites·25 claims
- 3041US2018114829A1Semiconductor DeviceTOYOTA MOTOR CO LTD·Filed 2017·Application pending·0 cites
- 3140US10770579B2SiC-MOSFET and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Sep 8, 2020·0 cites·9 claims
- 3239US10374081B2Semiconductor switching elementTOYOTA MOTOR CO LTD·Filed 2016·Granted Aug 6, 2019·0 cites·8 claims
- 3339US10326015B2Switching element and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Jun 18, 2019·0 cites·6 claims
- 3439US2018151364A1Method of manufacturing semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2017·Application pending·0 cites
- 3539US2019035944A1Schottky diodeTOYOTA MOTOR CO LTD·Filed 2017·Application pending·0 cites
- 3639US2019043999A1Schottky diodeTOYOTA MOTOR CO LTD·Filed 2017·Application pending·0 cites
- 3738US10204980B2Semiconductor device and manufacturing method of the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Feb 12, 2019·0 cites·3 claims
- 3838US2003164534A1Method for manufacturing semiconductor device using two orientation flatsFiled 2003·Application pending·0 cites
- 3937US10985241B2Semiconductor device and production method thereofTOYOTA MOTOR CO LTD·Filed 2017·Granted Apr 20, 2021·0 cites·4 claims
- 4036US9051663B2Manufacturing method of silicon carbide single crystalURAKAMI YASUSHI·Filed 2011·Granted Jun 9, 2015·0 cites·14 claims
- 4136US2019109187A1Semiconductor switching elementTOYOTA MOTOR CO LTD·Filed 2017·Application pending·0 cites
- 4236US2001048142A1Semiconductor substrate and method for manufacturing semiconductor device using the sameFiled 2001·Application pending·0 cites
- 4335US9096947B2SiC single crystal, production method therefor, SiC wafer and semiconductor deviceGUNJISHIMA ITARU·Filed 2012·Granted Aug 4, 2015·0 cites·34 claims
- 4433US2018247999A1Metal-oxide-semiconductor field-effect transistorTOYOTA MOTOR CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →