Inventor · disambiguated record
Jin-Yub Lee
Also filed as: LEE JIN-YUB
65 granted patents·13 pending applications·972 citations·filing 1999–2021
99Inventor score
Top patents by PatentIndex Score
78 records- 0196US11573261B2Semiconductor device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·3 cites·14 claims
- 0296US7433246B2Flash memory device capable of storing multi-bit data and single-big dataSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 7, 2008·39 cites·45 claims
- 0394US6510537B1Semiconductor memory device with an on-chip error correction circuit and a method for correcting a data error thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 21, 2003·119 cites·5 claims
- 0494US6278636B1Nonvolatile semiconductor memory device having improved page buffersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 21, 2001·82 cites·13 claims
- 0593US7813184B2Multi-block memory device erasing methods and related memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 12, 2010·57 cites·31 claims
- 0693US7352630B2Non-volatile memory device having improved program speed and associated programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 1, 2008·31 cites·19 claims
- 0792US7212426B2Flash memory system capable of inputting/outputting sector data at randomSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 1, 2007·73 cites·12 claims
- 0892US6731540B2Non-volatile semiconductor memory device having shared row selection circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 4, 2004·72 cites·30 claims
- 0991US7768828B2Flash memory device capable of storing multi-bit data and single-bit dataSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 3, 2010·20 cites·16 claims
- 1091US7545680B2Flash memory device and word line enable method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·24 cites·24 claims
- 1190US7224624B2Page buffer for nonvolatile semiconductor memory device and method of operationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·27 cites·11 claims
- 1289US7835193B2Flash memory device and method of erasing flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 16, 2010·21 cites·16 claims
- 1389US7110301B2Non-volatile semiconductor memory device and multi-block erase method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·48 cites·31 claims
- 1488US7692977B2Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·20 cites·16 claims
- 1588US7532495B2Nonvolatile memory device having flag cells for storing MSB program stateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·22 cites·11 claims
- 1686US7908425B2Method and device for performing cache readingSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 15, 2011·11 cites·10 claims
- 1786US7486557B2Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervalsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·16 cites·28 claims
- 1882US7296128B2Nonvolatile memory with error correction for page copy operation and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 13, 2007·24 cites·20 claims
- 1981US6930919B2NAND-type flash memory device having array of status cells for storing block erase/program informationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 16, 2005·31 cites·17 claims
- 2077US7719897B2Program verification for non-volatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 18, 2010·10 cites·33 claims
- 2176US7772910B2Internal clock generator, system and methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 10, 2010·7 cites·10 claims
- 2276US7652948B2Nonvolatile memory devices and programming methods using subsets of columnsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 26, 2010·11 cites·58 claims
- 2376US7210012B2Write-protection blocks for non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 24, 2007·22 cites·24 claims
- 2475US7421557B2Method and device for performing cache readingSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 2, 2008·18 cites·28 claims
- 2573US7460403B2Flash memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·8 cites·21 claims
- 2673US7203791B2Flash memory device with partial copy-back modeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·19 cites·23 claims
- 2772US8929171B2Voltage supply controller, nonvolatile memory device and memory systemPARK JUNE-HONG·Filed 2012·Granted Jan 6, 2015·5 cites·19 claims
- 2871US7949819B2Flash memory device and method of changing block size in the same using address shiftingSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 24, 2011·7 cites·17 claims
- 2969US7684246B2Flash memory device having pump with multiple output voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 23, 2010·7 cites·24 claims
- 3068US7907454B2Method of verifying programming operation of flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 15, 2011·6 cites·11 claims
- 3167US7558114B2Flash memory device capable of improving reliabilitySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 7, 2009·6 cites·19 claims
- 3267US7272048B2Nonvolatile memory device controlling common source line for improving read characteristicSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·6 cites·17 claims
- 3366US7532510B2Flash memory device with sector accessSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·6 cites·24 claims
- 3465US7646639B2Circuit and method generating program voltage for non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·5 cites·15 claims
- 3564US7529127B2Memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 5, 2009·5 cites·28 claims
- 3663US9711235B2Nonvolatile memory device, storage device having the same, operating method thereofGANGASANI VENKATARAMANA·Filed 2016·Granted Jul 18, 2017·3 cites·20 claims
- 3763US7773415B2Flash memory device capable of preventing soft-programming during a read operation and reading method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 10, 2010·2 cites·17 claims
- 3863US7453713B2Dual chip packageSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 18, 2008·2 cites·15 claims
- 3962US11125811B2Semiconductor device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·18 claims
- 4062US8301829B2Flash memory device and flash memory system including buffer memoryLEE JIN-YUB·Filed 2011·Granted Oct 30, 2012·1 cites·18 claims
- 4162US8289770B2Semiconductor memory device and system including the sameLEE JIN-YUB·Filed 2009·Granted Oct 16, 2012·5 cites·18 claims
- 4262US7586790B2Flash memory device and refresh methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·4 cites·20 claims
- 4362US7369442B2Erase discharge method of memory device and discharge circuit performing the methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 6, 2008·4 cites·23 claims
- 4461US7324378B2Method of driving a program operation in a nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 29, 2008·4 cites·16 claims
- 4560US8982620B2Non-volatile memory device and method of operatingSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 17, 2015·2 cites·20 claims
- 4659US7511509B2Semiconductor device and test system which output fuse cut information sequentiallySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 31, 2009·3 cites·13 claims
- 4759US7440320B2Row decoder for preventing leakage current and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·4 cites·12 claims
- 4858US7689741B2Dual buffer memory system for reducing data transmission time and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 30, 2010·11 cites·12 claims
- 4958US7289387B2Wordline decoder of non-volatile memory device using HPMOSSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 30, 2007·4 cites·19 claims
- 5057US7394700B2Programming methods for a nonvolatile memory device using a Y-scan operation during a verify read operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 1, 2008·3 cites·15 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →