Inventor · disambiguated record
Adam William Saxler
Also filed as: SAXLER ADAM · SAXLER ADAM W · SAXLER ADAM WILLIAM
68 granted patents·8 pending applications·2,624 citations·filing 2002–2025
99Inventor score
Files withCREE INC41SAXLER ADAM WILLIAM12MICRON TECHNOLOGY INC11SAXLER ADAM W3DRISCOLL DANIEL CARLETON2
Top patents by PatentIndex Score
76 records- 0199US7544963B2Binary group III-nitride based high electron mobility transistorsCREE INC·Filed 2005·Granted Jun 9, 2009·174 cites·34 claims
- 0299US7112860B2Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devicesCREE INC·Filed 2003·Granted Sep 26, 2006·142 cites·24 claims
- 0398US7901994B2Methods of manufacturing group III nitride semiconductor devices with silicon nitride layersCREE INC·Filed 2005·Granted Mar 8, 2011·91 cites·33 claims
- 0498US7875910B2Integrated nitride and silicon carbide-based devicesCREE INC·Filed 2006·Granted Jan 25, 2011·123 cites·11 claims
- 0598US7709859B2Cap layers including aluminum nitride for nitride-based transistorsCREE INC·Filed 2007·Granted May 4, 2010·108 cites·18 claims
- 0698US7615774B2Aluminum free group III-nitride based high electron mobility transistorsCREE INC·Filed 2005·Granted Nov 10, 2009·113 cites·14 claims
- 0798US7612390B2Heterojunction transistors including energy barriersCREE INC·Filed 2006·Granted Nov 3, 2009·87 cites·44 claims
- 0898US7550784B2Nitride-based transistors and methods of fabrication thereof using non-etched contact recessesCREE INC·Filed 2005·Granted Jun 23, 2009·75 cites·35 claims
- 0998US7465967B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsCREE INC·Filed 2005·Granted Dec 16, 2008·94 cites·42 claims
- 1098US7419892B2Semiconductor devices including implanted regions and protective layers and methods of forming the sameCREE INC·Filed 2005·Granted Sep 2, 2008·123 cites·20 claims
- 1198US7253454B2High electron mobility transistorCREE INC·Filed 2005·Granted Aug 7, 2007·79 cites·56 claims
- 1298US7030428B2Strain balanced nitride heterojunction transistorsCREE INC·Filed 2002·Granted Apr 18, 2006·223 cites·41 claims
- 1398US6982204B2Nitride-based transistors and methods of fabrication thereof using non-etched contact recessesCREE INC·Filed 2003·Granted Jan 3, 2006·205 cites·46 claims
- 1497US8034647B2LED with substrate modifications for enhanced light extraction and method of making sameCREE INC·Filed 2010·Granted Oct 11, 2011·34 cites·15 claims
- 1597US7084441B2Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating sameCREE INC·Filed 2004·Granted Aug 1, 2006·109 cites·45 claims
- 1696US8362503B2Thick nitride semiconductor structures with interlayer structuresCREE INC·Filed 2007·Granted Jan 29, 2013·34 cites·44 claims
- 1796US7432142B2Methods of fabricating nitride-based transistors having regrown ohmic contact regionsCREE INC·Filed 2004·Granted Oct 7, 2008·116 cites·26 claims
- 1896US7170111B2Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the sameCREE INC·Filed 2004·Granted Jan 30, 2007·118 cites·19 claims
- 1996US7161194B2High power density and/or linearity transistorsCREE INC·Filed 2004·Granted Jan 9, 2007·114 cites·35 claims
- 2095US8536615B1Semiconductor device structures with modulated and delta doping and related methodsDRISCOLL DANIEL CARLETON·Filed 2010·Granted Sep 17, 2013·54 cites·29 claims
- 2195US8153515B2Methods of fabricating strain balanced nitride heterojunction transistorsSAXLER ADAM WILLIAM·Filed 2006·Granted Apr 10, 2012·36 cites·32 claims
- 2295US7456443B2Transistors having buried n-type and p-type regions beneath the source regionCREE INC·Filed 2004·Granted Nov 25, 2008·80 cites·62 claims
- 2393US7033912B2Silicon carbide on diamond substrates and related devices and methodsCREE INC·Filed 2004·Granted Apr 25, 2006·45 cites·33 claims
- 2492US6841001B2Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structuresCREE INC·Filed 2002·Granted Jan 11, 2005·53 cites·40 claims
- 2591US7825432B2Nitride semiconductor structures with interlayer structuresCREE INC·Filed 2007·Granted Nov 2, 2010·16 cites·32 claims
- 2687US12027460B2Microelectronic devices including slot structures, and related memory devices, electronic systems, and methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 2, 2024·1 cites·37 claims
- 2787US2025378880A1Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2886US7626217B2Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devicesCREE INC·Filed 2005·Granted Dec 1, 2009·12 cites·41 claims
- 2985US9318594B2Semiconductor devices including implanted regions and protective layersSHEPPARD SCOTT T·Filed 2008·Granted Apr 19, 2016·8 cites·26 claims
- 3082US8829546B2Rare earth doped layer or substrate for light conversionDENBAARS STEVEN P·Filed 2006·Granted Sep 9, 2014·7 cites·24 claims
- 3182US8604461B2Semiconductor device structures with modulated doping and related methodsDRISCOLL DANIEL CARLETON·Filed 2009·Granted Dec 10, 2013·8 cites·43 claims
- 3282US7579626B2Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure deviceCREE INC·Filed 2006·Granted Aug 25, 2009·5 cites·9 claims
- 3380US8617909B2LED with substrate modifications for enhanced light extraction and method of making sameBATRES MAX·Filed 2009·Granted Dec 31, 2013·6 cites·19 claims
- 3480US7271416B2Strain compensated semiconductor structuresCREE INC·Filed 2004·Granted Sep 18, 2007·20 cites·22 claims
- 3579US9054017B2Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structuresCREE INC·Filed 2013·Granted Jun 9, 2015·3 cites·10 claims
- 3679US8481376B2Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devicesSAXLER ADAM WILLIAM·Filed 2011·Granted Jul 9, 2013·4 cites·20 claims
- 3778US7022378B2Nitrogen passivation of interface states in SiO2/SiC structuresCREE INC·Filed 2003·Granted Apr 4, 2006·20 cites·6 claims
- 3877US9040398B2Method of fabricating seminconductor devices including self aligned refractory contactsSAXLER ADAM WILLIAM·Filed 2006·Granted May 26, 2015·5 cites·33 claims
- 3977US8513672B2Wafer precursor prepared for group III nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereonSAXLER ADAM WILLIAM·Filed 2010·Granted Aug 20, 2013·2 cites·12 claims
- 4076US8628622B2Gas driven rotation apparatus and method for forming crystalline layersSAXLER ADAM WILLIAM·Filed 2005·Granted Jan 14, 2014·5 cites·37 claims
- 4176US8324005B2Methods of fabricating nitride semiconductor structures with interlayer structuresSAXLER ADAM WILLIAM·Filed 2010·Granted Dec 4, 2012·3 cites·25 claims
- 4276US8212289B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsSMITH RICHARD PETER·Filed 2008·Granted Jul 3, 2012·5 cites·20 claims
- 4375US7662682B2Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substratesCREE INC·Filed 2008·Granted Feb 16, 2010·5 cites·7 claims
- 4475US7135715B2Co-doping for fermi level control in semi-insulating Group III nitridesCREE INC·Filed 2004·Granted Nov 14, 2006·14 cites·18 claims
- 4575US2024321745A1Memory devices including slot structuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4674US7863624B2Silicon carbide on diamond substrates and related devices and methodsCREE INC·Filed 2009·Granted Jan 4, 2011·2 cites·29 claims
- 4774US7479669B2Current aperture transistors and methods of fabricating sameCREE INC·Filed 2007·Granted Jan 20, 2009·4 cites·16 claims
- 4873US8575651B2Devices having thick semi-insulating epitaxial gallium nitride layerSAXLER ADAM WILLIAM·Filed 2005·Granted Nov 5, 2013·3 cites·84 claims
- 4973US7759682B2LED with substrate modifications for enhanced light extraction and method of making sameCREE INC·Filed 2005·Granted Jul 20, 2010·3 cites·9 claims
- 5073US7449353B2Co-doping for fermi level control in semi-insulating Group III nitridesCREE INC·Filed 2006·Granted Nov 11, 2008·3 cites·24 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →