Inventor · disambiguated record
Hussein I. Hanafi
Also filed as: HANAFI HUSSEIN I · HANAFI HUSSEIN IBRAHIM
74 granted patents·3 pending applications·3,388 citations·filing 1991–2014
99Inventor score
Files withIBM55MICRON TECHNOLOGY INC17FARRAR PAUL A2HANAFI HUSSEIN I2INTERNAT BUSINSESS MACHINES CO1
Top patents by PatentIndex Score
77 records- 0198US7435636B1Fabrication of self-aligned gallium arsenide MOSFETs using damascene gate methodsMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 14, 2008·89 cites·31 claims
- 0298US7089515B2Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby powerIBM·Filed 2004·Granted Aug 8, 2006·135 cites·13 claims
- 0398US6271094B1Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitanceIBM·Filed 2000·Granted Aug 7, 2001·245 cites·31 claims
- 0498US6077745ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jun 20, 2000·277 cites·14 claims
- 0597US7952184B2Distributed semiconductor device methods, apparatus, and systemsMICRON TECHNOLOGY INC·Filed 2006·Granted May 31, 2011·41 cites·16 claims
- 0697US6660598B2Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel regionIBM·Filed 2002·Granted Dec 9, 2003·137 cites·10 claims
- 0797US5874760A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Feb 23, 1999·240 cites·10 claims
- 0896US7875529B2Semiconductor devicesMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 25, 2011·47 cites·13 claims
- 0996US6040210A2F-square memory cell for gigabit memory applicationsIBM·Filed 1998·Granted Mar 21, 2000·101 cites·11 claims
- 1096US5929477ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jul 27, 1999·192 cites·9 claims
- 1195US6835614B2Damascene double-gate MOSFET with vertical channel regionsIBM·Filed 2003·Granted Dec 28, 2004·100 cites·19 claims
- 1295US5206544ACMOS off-chip driver with reduced signal swing and reduced power supply disturbanceIBM·Filed 1991·Granted Apr 27, 1993·91 cites·18 claims
- 1394US7710765B2Back gated SRAM cellMICRON TECHNOLOGY INC·Filed 2007·Granted May 4, 2010·26 cites·25 claims
- 1494US6841831B2Fully-depleted SOI MOSFETs with low source and drain resistance and minimal overlap capacitance using a recessed channel damascene gate processIBM·Filed 2003·Granted Jan 11, 2005·74 cites·10 claims
- 1593US6337497B1Common source transistor capacitor stackIBM·Filed 1997·Granted Jan 8, 2002·100 cites·3 claims
- 1693US6034389ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Mar 7, 2000·154 cites·11 claims
- 1792US7791941B2Non-volatile SRAM cellMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 7, 2010·27 cites·16 claims
- 1892US7633801B2Memory in logic cellMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 15, 2009·19 cites·22 claims
- 1991US8872324B2Distributed semiconductor device methods, apparatus, and systemsMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 28, 2014·8 cites·20 claims
- 2091US6033957A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Mar 7, 2000·81 cites·10 claims
- 2190US7056773B2Backgated FinFET having different oxide thicknessesIBM·Filed 2004·Granted Jun 6, 2006·37 cites·22 claims
- 2290US6245619B1Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devicesIBM·Filed 2000·Granted Jun 12, 2001·51 cites·8 claims
- 2389US7018873B2Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gateIBM·Filed 2003·Granted Mar 28, 2006·46 cites·19 claims
- 2489US6440808B1Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-polyIBM·Filed 2000·Granted Aug 27, 2002·48 cites·20 claims
- 2589US6353249B1MOSFET with high dielectric constant gate insulator and minimum overlap capacitanceINTERNAT BUSINSESS MACHINES CO·Filed 2001·Granted Mar 5, 2002·55 cites·10 claims
- 2689US6013548ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jan 11, 2000·99 cites·12 claims
- 2788US7952913B2Back gated SRAM cellMICRON TECHNOLOGY INC·Filed 2010·Granted May 31, 2011·8 cites·25 claims
- 2888US6812527B2Method to control device threshold of SOI MOSFET'sIBM·Filed 2002·Granted Nov 2, 2004·37 cites·9 claims
- 2988US6664598B1Polysilicon back-gated SOI MOSFET for dynamic threshold voltage controlIBM·Filed 2002·Granted Dec 16, 2003·40 cites·9 claims
- 3088US6656824B1Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etchIBM·Filed 2002·Granted Dec 2, 2003·40 cites·10 claims
- 3188US6562713B1Method of protecting semiconductor areas while exposing a gateIBM·Filed 2002·Granted May 13, 2003·42 cites·10 claims
- 3287US7674669B2FIN field effect transistorMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 9, 2010·23 cites·12 claims
- 3387US7273785B2Method to control device threshold of SOI MOSFET'sIBM·Filed 2004·Granted Sep 25, 2007·34 cites·8 claims
- 3486US8237254B2Distributed semiconductor device methods, apparatus, and systemsFARRAR PAUL A·Filed 2011·Granted Aug 7, 2012·7 cites·18 claims
- 3586US6916694B2Strained silicon-channel MOSFET using a damascene gate processIBM·Filed 2003·Granted Jul 12, 2005·33 cites·11 claims
- 3686US6686630B2Damascene double-gate MOSFET structure and its fabrication methodIBM·Filed 2001·Granted Feb 3, 2004·44 cites·4 claims
- 3785US6093947ARecessed-gate MOSFET with out-diffused source/drain extensionIBM·Filed 1998·Granted Jul 25, 2000·80 cites·8 claims
- 3884US7613031B2System, apparatus, and method to increase read and write stability of scaled SRAM memory cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 3, 2009·17 cites·26 claims
- 3983US6835633B2SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layerIBM·Filed 2002·Granted Dec 28, 2004·24 cites·7 claims
- 4083US6635923B2Damascene double-gate MOSFET with vertical channel regionsIBM·Filed 2001·Granted Oct 21, 2003·28 cites·11 claims
- 4182US6815296B2Polysilicon back-gated SOI MOSFET for dynamic threshold voltage controlIBM·Filed 2003·Granted Nov 9, 2004·28 cites·8 claims
- 4281US7732286B2Buried biasing wells in FETs (Field Effect Transistors)IBM·Filed 2007·Granted Jun 8, 2010·7 cites·24 claims
- 4379US6218236B1Method of forming a buried bitline in a vertical DRAM deviceIBM·Filed 1999·Granted Apr 17, 2001·36 cites·14 claims
- 4478US7723196B2Damascene gate field effect transistor with an internal spacer structureIBM·Filed 2009·Granted May 25, 2010·6 cites·7 claims
- 4578US7214972B2Strained silicon-channel MOSFET using a damascene gate processIBM·Filed 2005·Granted May 8, 2007·6 cites·10 claims
- 4677US7955917B2Fabrication of self-aligned gallium arsenide MOSFETS using damascene gate methodsMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 7, 2011·5 cites·20 claims
- 4777US7476946B2Backgated FinFET having different oxide thicknessesIBM·Filed 2006·Granted Jan 13, 2009·5 cites·12 claims
- 4877US6258679B1Sacrificial silicon sidewall for damascene gate formationIBM·Filed 1999·Granted Jul 10, 2001·41 cites·24 claims
- 4976US8242555B2FIN field effect transistorHANAFI HUSSEIN I·Filed 2010·Granted Aug 14, 2012·8 cites·17 claims
- 5076US6143635AField effect transistors with improved implants and method for making such transistorsIBM·Filed 1999·Granted Nov 7, 2000·37 cites·29 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hussein I. Hanafi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →