Inventor · disambiguated record
Ananda K. Banerji
Also filed as: BANERJI ANANDA · BANERJI ANANDA K
16 granted patents·4 pending applications·729 citations·filing 2008–2024
95Inventor score
Top patents by PatentIndex Score
20 records- 0199US9997357B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2014·Granted Jun 12, 2018·430 cites·22 claims
- 0298US7648899B1Interfacial layers for electromigration resistance improvement in damascene interconnectsNOVELLUS SYSTEMS INC·Filed 2008·Granted Jan 19, 2010·78 cites·27 claims
- 0397US10559468B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2018·Granted Feb 11, 2020·13 cites·21 claims
- 0497US9214334B2High growth rate process for conformal aluminum nitrideLAM RES CORP·Filed 2014·Granted Dec 15, 2015·38 cites·15 claims
- 0597US8846525B2Hardmask materialsNOVELLUS SYSTEMS INC·Filed 2013·Granted Sep 30, 2014·21 cites·7 claims
- 0697US7858510B1Interfacial layers for electromigration resistance improvement in damascene interconnectsNOVELLUS SYSTEMS INC·Filed 2010·Granted Dec 28, 2010·50 cites·22 claims
- 0796US10566186B2Methods of encapsulationLAM RES CORP·Filed 2018·Granted Feb 18, 2020·9 cites·17 claims
- 0896US9190489B1Sacrificial pre-metal dielectric for self-aligned contact schemeLAM RES CORP·Filed 2014·Granted Nov 17, 2015·31 cites·24 claims
- 0994US10157736B2Methods of encapsulationLAM RES CORP·Filed 2016·Granted Dec 18, 2018·13 cites·22 claims
- 1094US8247332B2Hardmask materialsRANGARAJAN VISHWANATHAN·Filed 2009·Granted Aug 21, 2012·20 cites·13 claims
- 1193US10763107B2Methods of encapsulationLAM RES CORP·Filed 2020·Granted Sep 1, 2020·3 cites·20 claims
- 1291US9379210B2Sacrificial pre-metal dielectric for self-aligned contact schemeLAM RES CORP·Filed 2015·Granted Jun 28, 2016·7 cites·7 claims
- 1385US11011379B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2019·Granted May 18, 2021·2 cites·12 claims
- 1483US7799671B1Interfacial layers for electromigration resistance improvement in damascene interconnectsNOVELLUS SYSTEMS INC·Filed 2009·Granted Sep 21, 2010·11 cites·21 claims
- 1571US2024387258A1Film stack simplification for high aspect ratio patterning and vertical scalingLAM RES CORP·Filed 2024·Application pending·0 cites
- 1665US8536073B2Hardmask materialsRANGARAJAN VISHWANATHAN·Filed 2012·Granted Sep 17, 2013·3 cites·15 claims
- 1754US12080592B2Film stack simplification for high aspect ratio patterning and vertical scalingLAM RES CORP·Filed 2019·Granted Sep 3, 2024·0 cites·8 claims
- 1850US2025316474A1High modulus carbon doped silicon oxide film for mold stack scaling solutions in advanced memory applicationsLAM RES CORP·Filed 2023·Application pending·0 cites
- 1948US2023112746A1High modulus boron-based ceramics for semiconductor applicationsLAM RES CORP·Filed 2021·Application pending·0 cites
- 2047US2016064211A1High growth rate process for conformal aluminum nitrideLAM RES CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →