Inventor · disambiguated record
John Williams Palmour
Also filed as: PALMOUR JOHN · PALMOUR JOHN W · PALMOUR JOHN WILLIAMS
83 granted patents·2 pending applications·6,025 citations·filing 1987–2020
99Inventor score
Files withCREE INC47CREE RESEARCH INC17UNIV NORTH CAROLINA STATE5HENNING JASON PATRICK4RYU SEI-HYUNG3
Top patents by PatentIndex Score
85 records- 0199US6316793B1Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 1998·Granted Nov 13, 2001·566 cites·15 claims
- 0299US4946547AMethod of preparing silicon carbide surfaces for crystal growthCREE RESEARCH INC·Filed 1989·Granted Aug 7, 1990·750 cites·25 claims
- 0398US6583454B2Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 2001·Granted Jun 24, 2003·171 cites·4 claims
- 0498US5719409ASilicon carbide metal-insulator semiconductor field effect transistorCREE RESEARCH INC·Filed 1996·Granted Feb 17, 1998·291 cites·13 claims
- 0598US5506421APower MOSFET in silicon carbideCREE RESEARCH INC·Filed 1992·Granted Apr 9, 1996·299 cites·19 claims
- 0698US5270554AHigh power high frequency metal-semiconductor field-effect transistor formed in silicon carbideCREE RESEARCH INC·Filed 1991·Granted Dec 14, 1993·210 cites·67 claims
- 0798US4981551ADry etching of silicon carbideUNIV NORTH CAROLINA STATE·Filed 1989·Granted Jan 1, 1991·315 cites·34 claims
- 0897US6486502B1Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 1999·Granted Nov 26, 2002·160 cites·18 claims
- 0997US5972801AProcess for reducing defects in oxide layers on silicon carbideCREE RESEARCH INC·Filed 1995·Granted Oct 26, 1999·195 cites·34 claims
- 1097US5726463ASilicon carbide MOSFET having self-aligned gate structureGEN ELECTRIC·Filed 1992·Granted Mar 10, 1998·144 cites·5 claims
- 1197US4865685ADry etching of silicon carbideUNIV NORTH CAROLINA STATE·Filed 1987·Granted Sep 12, 1989·263 cites·32 claims
- 1296US9640617B2High performance power moduleCREE INC·Filed 2013·Granted May 2, 2017·24 cites·48 claims
- 1396US6686616B1Silicon carbide metal-semiconductor field effect transistorsCREE INC·Filed 2000·Granted Feb 3, 2004·155 cites·122 claims
- 1496US6246076B1Layered dielectric on silicon carbide semiconductor structuresCREE INC·Filed 1998·Granted Jun 12, 2001·142 cites·20 claims
- 1596US5539217ASilicon carbide thyristorCREE RESEARCH INC·Filed 1993·Granted Jul 23, 1996·147 cites·18 claims
- 1696US5465249ANonvolatile random access memory device having transistor and capacitor made in silicon carbide substrateCREE RESEARCH INC·Filed 1991·Granted Nov 7, 1995·151 cites·35 claims
- 1796US5264713AJunction field-effect transistor formed in silicon carbideCREE RESEARCH INC·Filed 1991·Granted Nov 23, 1993·152 cites·30 claims
- 1896US4945394ABipolar junction transistor on silicon carbideUNIV NORTH CAROLINA STATE·Filed 1987·Granted Jul 31, 1990·124 cites·6 claims
- 1995US8680587B2Schottky diodeHENNING JASON PATRICK·Filed 2011·Granted Mar 25, 2014·22 cites·38 claims
- 2095US5831288ASilicon carbide metal-insulator semiconductor field effect transistorCREE RESEARCH INC·Filed 1997·Granted Nov 3, 1998·123 cites·13 claims
- 2195US4875083AMetal-insulator-semiconductor capacitor formed on silicon carbideUNIV NORTH CAROLINA STATE·Filed 1987·Granted Oct 17, 1989·107 cites·14 claims
- 2294US9373617B2High current, low switching loss SiC power moduleCREE INC·Filed 2014·Granted Jun 21, 2016·17 cites·34 claims
- 2394US7332795B2Dielectric passivation for semiconductor devicesCREE INC·Filed 2004·Granted Feb 19, 2008·94 cites·49 claims
- 2494US6956238B2Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channelCREE INC·Filed 2001·Granted Oct 18, 2005·90 cites·44 claims
- 2594US6767843B2Method of N2O growth of an oxide layer on a silicon carbide layerCREE INC·Filed 2001·Granted Jul 27, 2004·94 cites·28 claims
- 2694US6344663B1Silicon carbide CMOS devicesCREE INC·Filed 1996·Granted Feb 5, 2002·140 cites·18 claims
- 2793US9142668B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2013·Granted Sep 22, 2015·11 cites·12 claims
- 2893US5629531AMethod of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structuresCREE RESEARCH INC·Filed 1994·Granted May 13, 1997·82 cites·3 claims
- 2993US5409859AMethod of forming platinum ohmic contact to p-type silicon carbideCREE RESEARCH INC·Filed 1994·Granted Apr 25, 1995·105 cites·24 claims
- 3092US9991399B2Passivation structure for semiconductor devicesCREE INC·Filed 2014·Granted Jun 5, 2018·11 cites·35 claims
- 3192US9741842B2Vertical power transistor deviceCREE INC·Filed 2016·Granted Aug 22, 2017·6 cites·20 claims
- 3292US9318597B2Layout configurations for integrating schottky contacts into a power transistor deviceCREE INC·Filed 2013·Granted Apr 19, 2016·15 cites·10 claims
- 3392US6121633ALatch-up free power MOS-bipolar transistorCREE RESEARCH INC·Filed 1998·Granted Sep 19, 2000·100 cites·21 claims
- 3491US9673283B2Power module for supporting high current densitiesHENNING JASON PATRICK·Filed 2012·Granted Jun 6, 2017·9 cites·39 claims
- 3590US9012984B2Field effect transistor devices with regrown p-layersCREE INC·Filed 2013·Granted Apr 21, 2015·12 cites·9 claims
- 3690US6107142ASelf-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusionCREE RESEARCH INC·Filed 1998·Granted Aug 22, 2000·109 cites·46 claims
- 3790US5776837AMethod of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structuresCREE RESEARCH INC·Filed 1996·Granted Jul 7, 1998·66 cites·5 claims
- 3889US10784338B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2018·Granted Sep 22, 2020·3 cites·20 claims
- 3989US9331197B2Vertical power transistor deviceCREE INC·Filed 2013·Granted May 3, 2016·7 cites·25 claims
- 4089US6100169AMethods of fabricating silicon carbide power devices by controlled annealingCREE INC·Filed 1998·Granted Aug 8, 2000·82 cites·35 claims
- 4188US8664665B2Schottky diode employing recesses for elements of junction barrier arrayHENNING JASON PATRICK·Filed 2011·Granted Mar 4, 2014·10 cites·29 claims
- 4288US5459107AMethod of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structuresCREE RESEARCH INC·Filed 1992·Granted Oct 17, 1995·69 cites·3 claims
- 4388US5323022APlatinum ohmic contact to p-type silicon carbideUNIV NORTH CAROLINA STATE·Filed 1992·Granted Jun 21, 1994·70 cites·14 claims
- 4487US9142662B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted Sep 22, 2015·11 cites·25 claims
- 4587US9029945B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted May 12, 2015·11 cites·23 claims
- 4687US6972436B2High voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2001·Granted Dec 6, 2005·39 cites·37 claims
- 4787US6514779B1Large area silicon carbide devices and manufacturing methods thereforCREE INC·Filed 2001·Granted Feb 4, 2003·41 cites·15 claims
- 4885USRE49913EVertical power transistor deviceWOLFSPEED INC·Filed 2020·Granted Apr 9, 2024·1 cites·38 claims
- 4985US7414268B2High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Aug 19, 2008·12 cites·21 claims
- 5084US9306061B2Field effect transistor devices with protective regionsCREE INC·Filed 2013·Granted Apr 5, 2016·7 cites·14 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →