Inventor · disambiguated record
Tsung-Mu Yang
Also filed as: YANG TSUNG-MU
22 granted patents·6 pending applications·11 citations·filing 2013–2023
91Inventor score
Top patents by PatentIndex Score
28 records- 0196US11508818B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·2 cites·6 claims
- 0288US10546922B2Method for fabricating cap layer on an epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 28, 2020·4 cites·13 claims
- 0385US12369371B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 22, 2025·1 cites·6 claims
- 0484US12046640B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 23, 2024·0 cites·7 claims
- 0584US11955519B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 9, 2024·0 cites·7 claims
- 0680US11664426B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2022·Granted May 30, 2023·0 cites·6 claims
- 0779US12046639B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 23, 2024·0 cites·9 claims
- 0873US11695067B2High electron mobility transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 4, 2023·0 cites·8 claims
- 0972US11257939B2High electron mobility transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 22, 2022·1 cites·17 claims
- 1071US12159930B2High electron mobility transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 1170US12224339B2High electron mobility transistorUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 11, 2025·0 cites·7 claims
- 1270US9214551B2Method for fabricating semiconductor device, and semiconductor device made therebyUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·2 cites·6 claims
- 1369US9929234B2Semiconductor device having a cap layer with V-shapeUNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 27, 2018·1 cites·8 claims
- 1468US11557666B2High electron mobility transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jan 17, 2023·0 cites·8 claims
- 1566US11563088B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 24, 2023·0 cites·10 claims
- 1661US11355626B2High electron mobility transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 7, 2022·0 cites·8 claims
- 1759US11616135B2High electron mobility transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 28, 2023·0 cites·8 claims
- 1856US10468502B2Method of forming FinFET deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 5, 2019·0 cites·10 claims
- 1955US12205905B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 21, 2025·0 cites·13 claims
- 2055US10263096B1FinFET device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 16, 2019·0 cites·9 claims
- 2155US2023207643A1High electron mobility transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2249US2022344474A1Superlattice structureUNITED MICROELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 2349US2023163205A1Semiconductor device and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 2444US2015170916A1Semiconductor process for manufacturing epitaxial structuresUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 2543US10236179B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 19, 2019·0 cites·15 claims
- 2640US9049790B2Masking layer formed by applying developable photosensitive resin compositions on panel structureECHEM SOLUTIONS CORP·Filed 2013·Granted Jun 2, 2015·0 cites·19 claims
- 2734US2018097110A1Method for manufacturing a semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 2834US2017133460A1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →